Abstract: An optoelectronic device includes a substrate and a first transition stack formed on the substrate including at least a first transition layer formed on the substrate and having at least one hollow component formed inside the first transition layer, and a second transition layer wherein the second transition layer is an unintentional doped layer or an undoped layer formed on the first transition layer.

Abstract: A phosphor comprising an oxynitride compound having a chemical formula of A2-mE3O2N4:Mm, wherein A comprises an alkaline-earth element, E comprises a IVA group element, M is an activator comprising a bivalent rare-earth element, and 0.00001?m?1.0, wherein A is at least one element selected from the group consisting of Mg, Ca, Sr and Ba; E is at least one element selected from the group consisting of C, Si, Ge, and Sn; and M is at least one element selected from the group consisting of Lu, Sc, La, Gd, Tb, Eu, and Sm.

Abstract: A wavelength conversion structure comprises a phosphor layer comprising a first part and a second part formed on the first part, wherein the first part and the second part have a plurality of pores, a first material layer formed in the plurality of pores of the first part, a second material layer formed in the plurality of pores of the second part and a plurality of phosphor particles, wherein the plurality of phosphor particles is distributed in the first material layer and the second material layer.

Abstract: This disclosure discloses an illumination apparatus. The illumination apparatus comprises a cover comprising a second portion and a first portion, and a light source disposed within the cover. An average thickness of the first portion is greater than that of the second portion.

Abstract: A wavelength conversion structure comprises a first phosphor layer and a second phosphor layer formed on the first phosphor layer, wherein the first phosphor layer comprises a plurality of first phosphor particles, and the second phosphor layer comprises a plurality of second phosphor particles. The average particle size of the second phosphor particles is not equal to that of the first phosphor particles.

Abstract: A wavelength conversion structure comprises a phosphor layer comprising a first part and a second part formed on the first part, wherein the first part and the second part have a plurality of pores, a first material layer formed in the plurality of pores of the first part, a second material layer formed in the plurality of pores of the second part and a plurality of phosphor particles, wherein the plurality of phosphor particles is distributed in the first material layer and the second material layer.

Abstract: Disclosed is a light-emitting device comprising: a carrier; a light-emitting element disposed on the carrier; a first light guide layer covering the light-emitting element, and disposed on the carrier; a wavelength conversion and light guide layer covering the first light guide layer and the light-emitting element, and disposed on the carrier; and a low refractive index layer disposed between the first light guide layer and the wavelength conversion and light guide layer; wherein the first light guide layer comprises a gradient refractive index, the wavelength conversion and light guide layer comprises a dome shape structure and is used to convert a wavelength of light emitted from the light-emitting element and transmit light, and the low refractive index layer is used to reflect light from the wavelength conversion and light guide layer.

Abstract: An optoelectronic device includes a substrate and a first transition stack formed on the substrate including at least a first transition layer formed on the substrate and having at least one hollow component formed inside the first transition layer, and a second transition layer wherein the second transition layer is an unintentional doped layer or an undoped layer formed on the first transition layer.

Abstract: A photoelectrical element having a thermal-electrical structure including: a photoelectrical transforming layer, two semiconductor layers formed on the two opposite sides of the photoelectrical transforming layer respectively, an electrically conductive structure formed on at least one of the semiconductor layer, and a thermal-electrical structure formed in the electrically conductive structure, wherein the thermal-electrical structure performs the thermal-electrical transformation to promote current spreading effect, or proceed electrical-thermal transformation to dissipate the heat from the photoelectrical transforming layer.

Abstract: A light emitting diode device is provided, which comprises a substrate comprising a first growth surface and a bottom surface opposite to the first growth surface; a dielectric layer with a plurality of openings therein formed on the first growth surface; a plurality of semiconductor nano-scaled structures formed on the substrate protruding through the openings; a layer formed on the plurality of semiconductor nano-scaled structures with a second growth surface substantially parallel with the bottom surface; a light emitting diode structure formed on the second growth surface; wherein the diameters of the openings are smaller than 250 nm, and wherein the diameters of the plurality semiconductor nano-scaled structures are larger than the diameters of the corresponding openings.

Abstract: A repeatable voice-playing gift box having a voice circuit therein is disclosed. This voice circuit has a recording switch and a voice playing switch. The gift presenter may press the recording switch to record the voice of blessing and present it together with the gift box to the receiver. Just by pressing the voice playing switch outside the gift box, the message recorded from the gift presenter can be heard by the receiver. By this way, the gift receiver can really feel the sincere and cordial blessing of the gift presenter.