Patents by Inventor Ming-Chi Wu

Ming-Chi Wu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10910737
    Abstract: A rail terminal assembling structure includes a protection member formed with an assembling passage defined by a contact side section, a connection side section and two lateral sections. The connection side section has a first locating section, an elastic locating section and a second locating section. An end section of a conductive plate extends into the assembling passage and securely attached to the contact side section. A metal leaf spring has a first section, a second section and an elastic bight section connected between the first and second sections. The first section has a first located section and an insertion section. When the first section extends into the assembling passage and the first section elastically pushes/presses the elastic locating section until the insertion section reaches the elastic locating section, the elastic locating section is elastically engaged with the insertion section.
    Type: Grant
    Filed: June 26, 2018
    Date of Patent: February 2, 2021
    Assignees: Switchlab Inc., Switchlab (Shanghai) Co., Ltd.
    Inventors: Chih-Yuan Wu, Wei-Chi Chen, Ming-Shan Tai
  • Publication number: 20210026095
    Abstract: An optical element driving system is provided. The optical element driving system includes an optical element driving mechanism and a control assembly. The optical element driving mechanism includes a movable portion, a fixed portion, a driving assembly, and a position-sensing assembly. The movable portion is used for connecting to an optical element. The movable portion is movable relative to the fixed portion. The movable portion is in an accommodating space in the fixed portion. The driving assembly is used for driving the movable portion to move relative to the fixed portion. The control assembly provides a driving signal to the driving assembly to control the driving assembly. The position-sensing assembly is used for detecting the movement of the movable portion relation to the fixed portion and providing a motion-sensing signal to the control assembly.
    Type: Application
    Filed: July 24, 2020
    Publication date: January 28, 2021
    Inventors: Shun-Chieh TANG, Chen-Chi KUO, Yi-Chun CHENG, Ming-Chun HSIEH, Ya-Hsiu WU, Ying-Jen WANG, Sin-Jhong SONG
  • Publication number: 20210018893
    Abstract: Manufacturing of a shoe or a portion of a shoe is enhanced by executing various shoe-manufacturing processes in an automated fashion. For example, information describing a shoe part may be determined, such as an identification, an orientation, a color, a surface topography, an alignment, a size, etc. Based on the information describing the shoe part, automated shoe-manufacturing apparatuses may be instructed to apply various shoe-manufacturing processes to the shoe part, such as a pickup and placement of the shoe part with a pickup tool.
    Type: Application
    Filed: October 5, 2020
    Publication date: January 21, 2021
    Inventors: Dragan Jurkovic, Patrick Conall Regan, Chih-Chi Chang, Chang-Chu Liao, Ming-Feng Jean, Kuo-Hung Lee, Yen-Hsi Liu, Hung-Yu Wu
  • Publication number: 20200395464
    Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a first fin structure over a substrate. The method includes forming a dielectric layer over the substrate and the first fin structure. The dielectric layer has a first trench exposing a first portion of the first fin structure. The method includes forming a first work function layer in the first trench. The method includes forming a first mask layer over the first work function layer in the first trench, wherein an upper portion of the first work function layer in the first trench is exposed by the first mask layer. The method includes removing the first work function layer exposed by the first mask layer. The method includes removing the first mask layer. The method includes forming a first gate electrode in the first trench.
    Type: Application
    Filed: August 31, 2020
    Publication date: December 17, 2020
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY., LTD.
    Inventors: Wen-Han FANG, Chang-Yin CHEN, Ming-Chia TAI, Po-Chi WU
  • Patent number: 10868053
    Abstract: An image sensor with high quantum efficiency is provided. In some embodiments, a semiconductor substrate includes a non-porous semiconductor layer along a front side of the semiconductor substrate. A periodic structure is along a back side of the semiconductor substrate. A high absorption layer lines the periodic structure on the back side of the semiconductor substrate. The high absorption layer is a semiconductor material with an energy bandgap less than that of the non-porous semiconductor layer. A photodetector is in the semiconductor substrate and the high absorption layer. A method for manufacturing the image sensor is also provided.
    Type: Grant
    Filed: August 15, 2019
    Date of Patent: December 15, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chien-Chang Huang, Chien Nan Tu, Ming-Chi Wu, Yu-Lung Yeh, Ji Heng Jiang
  • Patent number: 10861989
    Abstract: An image sensor with an absorption enhancement semiconductor layer is provided. In some embodiments, the image sensor comprises a front-side semiconductor layer, an absorption enhancement semiconductor layer, and a back-side semiconductor layer that are stacked. The absorption enhancement semiconductor layer is stacked between the front-side and back-side semiconductor layers. The absorption enhancement semiconductor layer has an energy bandgap less than that of the front-side semiconductor layer. Further, the image sensor comprises a plurality of protrusions and a photodetector. The protrusions are defined by the back-side semiconductor layer, and the photodetector is defined by the front-side semiconductor layer, the absorption enhancement semiconductor layer, and the back-side semiconductor layer.
    Type: Grant
    Filed: November 13, 2019
    Date of Patent: December 8, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Ming-Chi Wu, Chien Nan Tu, Kun-Yu Lin, Shih-Shiung Chen
  • Patent number: 10861988
    Abstract: An image sensor with an absorption enhancement semiconductor layer is provided. In some embodiments, the image sensor comprises a front-side semiconductor layer, an absorption enhancement semiconductor layer, and a back-side semiconductor layer that are stacked. The absorption enhancement semiconductor layer is stacked between the front-side and back-side semiconductor layers. The absorption enhancement semiconductor layer has an energy bandgap less than that of the front-side semiconductor layer. Further, the image sensor comprises a plurality of protrusions and a photodetector. The protrusions are defined by the back-side semiconductor layer, and the photodetector is defined by the front-side semiconductor layer, the absorption enhancement semiconductor layer, and the back-side semiconductor layer.
    Type: Grant
    Filed: November 13, 2019
    Date of Patent: December 8, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Ming-Chi Wu, Chien Nan Tu, Kun-Yu Lin, Shih-Shiung Chen
  • Publication number: 20200343289
    Abstract: An image sensor device is provided. The image sensor device includes a semiconductor substrate having a first side, a second side opposite to the first side, and at least one light-sensing region close to the first side. The image sensor device includes a dielectric feature covering the second side and extending into the semiconductor substrate. The dielectric feature in the semiconductor substrate surrounds the light-sensing region. The image sensor device includes a reflective layer in the dielectric feature in the semiconductor substrate, wherein a top portion of the reflective layer protrudes away from the second side, and a top surface of the reflective layer and a top surface of the insulating layer are substantially coplanar.
    Type: Application
    Filed: July 9, 2020
    Publication date: October 29, 2020
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chun-Chieh FANG, Ming-Chi WU, Ji-Heng JIANG, Chi-Yuan WEN, Chien-Nan TU, Yu-Lung YEH, Shih-Shiung CHEN, Kun-Yu LIN
  • Patent number: 10795335
    Abstract: Manufacturing of a shoe or a portion of a shoe is enhanced by executing various shoe-manufacturing processes in an automated fashion. For example, information describing a shoe part may be determined, such as an identification, an orientation, a color, a surface topography, an alignment, a size, etc. Based on the information describing the shoe part, automated shoe-manufacturing apparatuses may be instructed to apply various shoe-manufacturing processes to the shoe part, such as a pickup and placement of the shoe part with a pickup tool.
    Type: Grant
    Filed: January 10, 2018
    Date of Patent: October 6, 2020
    Assignee: NIKE, Inc.
    Inventors: Dragan Jurkovic, Patrick Conall Regan, Chih-Chi Chang, Chang-Chu Liao, Ming-Feng Jean, Kuo-Hung Lee, Yen-Hsi Liu, Hung-Yu Wu
  • Patent number: 10763341
    Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a substrate. The semiconductor device structure includes a first fin structure and a second fin structure disposed over the substrate. The semiconductor device structure includes a first gate stack disposed over the substrate and overlapping the first fin structure. The first gate stack includes a first work function layer, a first gate electrode, and a first hard mask layer, the first gate electrode is over the first work function layer, the first hard mask layer is over the first gate electrode, the first gate electrode has a first convex top surface protruding beyond a first top surface of the first work function layer. The semiconductor device structure includes a second gate stack disposed over the substrate and overlapping the second fin structure.
    Type: Grant
    Filed: November 8, 2018
    Date of Patent: September 1, 2020
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Wen-Han Fang, Chang-Yin Chen, Ming-Chia Tai, Po-Chi Wu
  • Patent number: 10763572
    Abstract: An antenna module is provided. The antenna module includes a circuit board, a conductive layer, and a spiral coil. The circuit board has a first surface and a second surface opposite to each other. The circuit board further includes a first block and a second block connected to each other. The conductive layer is disposed on the first block. The spiral coil is disposed in the second block of the circuit board. The conductive layer at least partially surrounds the spiral coil.
    Type: Grant
    Filed: September 6, 2018
    Date of Patent: September 1, 2020
    Assignee: ASUSTEK COMPUTER INC.
    Inventors: Chien-Hung Tsai, Kuo-Chu Liao, Wei-Cheng Lo, Te-Li Lien, Hsuan-Chi Tsai, Ming-Shan Wu, Yung-Chieh Yu
  • Publication number: 20200251812
    Abstract: An antenna device is provided. The antenna device includes a first substrate, a multilayer electrode, a second substrate, and a liquid-crystal layer. The multilayer electrode is disposed on the first substrate, and the multilayer electrode includes a first conductive layer, a second conductive layer, and a third conductive layer. The second conductive layer is disposed on the first conductive layer. The third conductive layer is disposed on the second conductive layer. The liquid-crystal layer is disposed between the first substrate and the second substrate. In addition, the third conductive layer includes a first portion that extends beyond the second conductive layer.
    Type: Application
    Filed: January 2, 2020
    Publication date: August 6, 2020
    Inventors: Chia-Ping TSENG, Ker-Yih KAO, Chia-Chi HO, Ming-Yen WENG, Hung-I TSENG, Shu-Ling WU, Huei-Ying CHEN
  • Patent number: 10734427
    Abstract: A method for forming an image sensor device is provided. The method includes providing a semiconductor substrate including a front surface, a back surface opposite to the front surface, at least one light-sensing region close to the front surface, and a first trench surrounding the light-sensing region. The method includes forming an insulating layer over the back surface and in the first trench. A void is formed in the insulating layer in the first trench, and the void is closed. The method includes removing the insulating layer over the void to open up the void. The opened void forms a second trench partially in the first trench. The method includes filling a reflective structure in the second trench. The reflective structure has a light reflectivity ranging from about 70% to about 100%.
    Type: Grant
    Filed: February 15, 2019
    Date of Patent: August 4, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chun-Chieh Fang, Ming-Chi Wu, Ji-Heng Jiang, Chi-Yuan Wen, Chien-Nan Tu, Yu-Lung Yeh, Shih-Shiung Chen, Kun-Yu Lin
  • Publication number: 20200243580
    Abstract: A method for manufacturing an image sensing device includes forming an interconnection layer over a front surface of a semiconductor substrate. A trench is formed to extend from a back surface of the semiconductor substrate. An etch stop layer is formed along the trench. A buffer layer is formed over the etch stop layer. An etch process is performed for etching the buffer layer. The buffer layer and the etch stop layer include different materials.
    Type: Application
    Filed: April 8, 2020
    Publication date: July 30, 2020
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Wei-Chuang Wu, Ming-Tsong Wang, Feng-Chi Hung, Ching-Chun Wang, Jen-Cheng Liu, Dun-Nian Yaung
  • Publication number: 20200236768
    Abstract: An extreme ultra-violet (EUV) lithography system includes an EUV source and EUV scanner. A droplet generator provides a droplet stream in the EUV source. A gas shield is configured to surround the droplet stream. When a laser reacts a droplet in the stream EUV radiation and ionized particles are produced. The gas shield can reduce contamination resulting from the ionized particles by conveying the ionized particles to a droplet catcher. Components of the EUV source may be biased with a voltage to repel or attract ionized particles to reduce contamination from the ionized particles.
    Type: Application
    Filed: April 3, 2020
    Publication date: July 23, 2020
    Inventors: Ming-Fa Wu, Tzung-Chi Fu, Chun Che Lin, Po-Chung Cheng, Huai-Tei Yang
  • Patent number: 10686262
    Abstract: A conductive component structure of electrical wire connection device is more securely assembled with the conductive wire to enhance the electro-conduction performance. The conductive component includes a main body in the form of a plate body, a restriction body connected on the main body and an aid unit (or elastic unit) assembled with the restriction body. The restriction body has a base section, a first arm and a second arm connected with the base section and free sections connected with the first and second arms. The aid unit (or elastic unit) provides greater elastic holding action force for the restriction body. When the conductive wire is plugged into the case into contact with the conductive component, the rear end of the conductive wire is at least securely pressed between the first and second arms of the restriction body without deflecting or swinging due to external force.
    Type: Grant
    Filed: March 13, 2019
    Date of Patent: June 16, 2020
    Assignees: SWITCHLAB INC., SWITCHLAB (SHANGHAI) CO., LTD., GAOCHENG ELECTRONICS CO., LTD.
    Inventors: Chih-Yuan Wu, Wei-Chi Chen, Ming-Shan Tai
  • Patent number: 10631392
    Abstract: An extreme ultra-violet (EUV) lithography system includes an EUV source and EUV scanner. A droplet generator provides a droplet stream in the EUV source. A gas shield is configured to surround the droplet stream. When a laser reacts a droplet in the stream, EUV radiation and ionized particles are produced. The gas shield can reduce contamination resulting from the ionized particles by conveying the ionized particles to a droplet catcher. Components of the EUV source may be biased with a voltage to repel or attract ionized particles to reduce contamination from the ionized particles.
    Type: Grant
    Filed: April 30, 2018
    Date of Patent: April 21, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ming-Fa Wu, Tzung-Chi Fu, Chun-Che Lin, Po-Chung Cheng, Huai-Tei Yang
  • Patent number: 10622394
    Abstract: The image sensing device includes a semiconductor substrate, an interconnection layer, a radiation-sensing region and an isolation structure. The semiconductor substrate has a front surface and a back surface. The interconnection layer is disposed over the front surface of the semiconductor substrate. The radiation-sensing region is disposed in the semiconductor substrate. The isolation structure is disposed on the back surface of the semiconductor substrate. The isolation structure includes a trench and an etch stop layer. The trench extends from the back surface of the semiconductor substrate. The etch stop layer is disposed along the trench. An etch selectivity of a silicon oxide film to the etch stop layer is greater than a predetermined value.
    Type: Grant
    Filed: May 10, 2017
    Date of Patent: April 14, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Wei-Chuang Wu, Ming-Tsong Wang, Feng-Chi Hung, Ching-Chun Wang, Jen-Cheng Liu, Dun-Nian Yaung
  • Publication number: 20200111771
    Abstract: A spliced display including a transparent substrate, a plurality of light emitting diode modules, at least one control element and a signal transmission structure is provided. The transparent substrate has a display surface and a back surface opposite to each other. The light emitting diode modules are disposed on the back surface of the transparent substrate to be spliced with each other. Each of the light emitting diode modules includes a driving backplane and a plurality of micro light emitting diodes, and the micro LEDs are disposed in an array between the driving backplane and the transparent substrate. The control element is disposed on the transparent substrate. The control element is connected to the light emitting diode modules via the signal transmission structure, and the light emitting diode modules are connected to each other via the signal transmission structure.
    Type: Application
    Filed: December 8, 2019
    Publication date: April 9, 2020
    Applicant: Industrial Technology Research Institute
    Inventors: Wei-Sheng Su, Chia-Hsin Chao, Mao-Chi Lin, Yen-Hsiang Fang, Li-Chun Huang, Ming-Hsien Wu
  • Publication number: 20200089894
    Abstract: A data-processing device is provided. The data-processing device includes: a flash memory, a computation unit, and a flash-memory controller. The flash-memory controller is electrically connected to the computation unit, and configured to control access to the flash memory. The flash-memory controller allocates a first execute-only memory (XOM) setting and a second XOM setting in a first memory bank and a second memory bank of the flash memory, respectively. The flash-memory controller allocates one or more XOM spaces in the flash memory according to the first XOM setting or the second XOM setting.
    Type: Application
    Filed: May 30, 2019
    Publication date: March 19, 2020
    Inventors: Ming-Ying LIU, Kun-Yi WU, Chun-Chi CHEN