Abstract: Embodiments with present disclosure provides a gate-all-around FET device including extended bottom inner spacers. The extended bottom inner prevents the subsequently formed epitaxial source/drain region from volume loss and induces compressive strain in the channel region to prevent strain loss and channel resistance degradation.

Abstract: A card edge connector includes: a connector base having a card slot and plural terminals; a latch located at one end of the connector base for locking a card; and a releasing member. The releasing member includes two levers and a moving member, the levers are connected with the connector base in a pivoting manner, a first end of the lever is connected with the latch and an opposite second end of the lever is coupled to the moving member, wherein when the card is inserted into the slot and presses against the moving member downwards, the moving member drives the second ends of the levers to move downward, resulting in the first ends moving upwards to push the latch to lock with the card, and when the card is pulled out the moving member resets and drives the levers to release the latch from the card.

Abstract: A method includes generating an integrated circuit (IC) layout design and manufacturing an IC based on the IC layout design. Generating the IC layout design includes generating a pattern of a first shallow trench isolation (STI) region and a pattern of a through substrate via (TSV) region within the first STI region; a pattern of a second STI region surrounding the first STI region, the second STI region includes a first and second layout region, the second layout region being separated from the first STI region by the first layout region, first active regions of a group of dummy devices being defined within the first layout region, and second active regions of a group of active devices being defined within the second layout region; and patterns of first gates of the group of dummy devices in the first layout region, each of the first active regions having substantially identical dimension in a first direction.

Abstract: A current sensing calibration method includes setting a first calibration current, inputting the first calibration current to a current sensing circuit for detecting a first real digital code, acquiring offset calibration data according to the first real digital code and a first ideal digital code corresponding to the first calibration current, setting a second calibration current and a third calibration current, inputting the second calibration current to the current sensing circuit for detecting a second real digital code, inputting the third calibration current to the current sensing circuit for detecting a third real digital code, acquiring gain calibration data according to the second real digital code, the third real digital code, a second ideal digital code, and a third ideal digital code, and acquiring channel temperature calibration data after the current sensing circuit is calibrated according to the offset calibration data and the gain calibration data.