Abstract: A semiconductor device includes a plurality of channel layers vertically separated from one another. The semiconductor device also includes an active gate structure comprising a lower portion and an upper portion. The lower portion wraps around each of the plurality of channel layers. The semiconductor device further includes a gate spacer extending along a sidewall of the upper portion of the active gate structure. The gate spacer has a bottom surface. Moreover, a dummy gate dielectric layer is disposed between the gate spacer and a topmost channel layer of plurality of channel layers. The dummy gate dielectric layer is in contact with a top surface of the topmost channel layer, the bottom surface of the gate spacer, and the sidewall of the gate structure.

Abstract: A method includes fabricating a semiconductor device, wherein the method includes depositing a coating layer on a first region and a second region under a loading condition such that a height of the coating layer in the first region is greater than a height of the coating layer in the second region. The method also includes applying processing gas to the coating layer to remove an upper portion of the coating layer such that a height of the coating layer in the first region is a same as a height of the coating layer in the second region.

Abstract: A semiconductor package includes a redistribution structure, a first conductive pillar and a second conductive pillar, and a semiconductor device. The redistribution structure has a first surface and a second surface opposite to the first surface. The first conductive pillar and the second conductive pillar are disposed on the first surface of the redistribution structure and electrically connected with the redistribution structure, wherein a maximum lateral dimension of the first conductive pillar is greater than a maximum lateral dimension of the second conductive pillar, and a topography variation of a top surface of the first conductive pillar is greater than a topography variation of a top surface of the second conductive pillar.

Abstract: A method for removing nodule defects is disclosed. The nodule defects may be formed on a non-selected portion of a semiconductor structure during formation of a semiconductor region on a selected portion of the semiconductor structure. A plasma having a higher selectivity to etch the nodule defects relative to the semiconductor region may be used to selectively remove the nodule defects on the non-selected portion.

Abstract: A package structure is provided. The package structure includes a redistribution structure and a semiconductor die over the redistribution structure, and bonding elements below the redistribution structure. The semiconductor die has a first sidewall and a second sidewall connected to each other. The bonding elements include a first row of bonding elements and a second row of bonding elements. In a plan view, the second row of bonding elements is arranged between the first row of bonding elements and an extending line of the second sidewall. A minimum distance between the second row of bonding elements and the first sidewall is greater than the minimum distance between the first row of bonding elements and the first sidewall.

Abstract: The present disclosure provides a method for manufacturing a porous film, including: preparing a polymer mixture solution, wherein the polymer mixture solution includes polycaprolactone and at least one hydrophobic polymer; adding solid particles as a dispersing agent to the polymer mixture solution and mixing the solid particles with the polymer mixture solution, wherein the amount of solid particles added is enough to convert the polymer mixture solution into a solid mixture; drying the solid mixture to form a film; and washing the film with a washing fluid to remove the solid particles from the film to form the porous film, wherein the weight ratio of the polycaprolactone to the at least one hydrophobic polymer is about 1:0.1-10, and wherein the weight ratio of the polycaprolactone and the at least one hydrophobic polymer to the solid particles is about 1:0.01-250.

Abstract: A method for preparing a bifunctional film, including: (a) drying a first polymer solution to form a film to form an anti-adhesion layer, and (b) drying a second polymer solution over the anti-adhesion layer to form a film to form an attachment layer. The first polymer solution includes a first hydrophobic solution and a first hydrophilic solution, and in the first polymer solution, the weight ratio of the solute of the first hydrophobic solution to the solute of the first hydrophilic solution is 1:0.01-1. Moreover, the second polymer solution is composed of a second hydrophilic solution.

Abstract: A semiconductor device package is provided. The semiconductor device package includes a substrate, a first package component, a second package component, and at least one dummy die. The first and second package components are disposed over and bonded to the substrate. The first and second package components are different types of electronic components that provide different functions. The dummy die is disposed over and attached to the substrate. The dummy die is located between the first and second package components and is electrically isolated from the substrate.

Abstract: A method includes forming a gate stack on a first portion of a semiconductor fin, removing a second portion of the semiconductor fin to form a recess, and forming a source/drain region starting from the recess. The formation of the source/drain region includes performing a first epitaxy process to grow a first semiconductor layer, wherein the first semiconductor layer has straight-and-vertical edges, and performing a second epitaxy process to grow a second semiconductor layer on the first semiconductor layer. The first semiconductor layer and the second semiconductor layer are of a same conductivity type.

Abstract: A semiconductor die package and a method of forming the same are provided. The semiconductor die package includes a package substrate, an interposer substrate over the package substrate, semiconductor dies over the interposer substrate, and an underfill element over the interposer substrate and between the semiconductor dies and interposer substrate. The semiconductor die package also includes a ring structure and one or more lid structures separated from the ring structure. The ring structure is coupled to the package substrate to control warpage. The lid structures are coupled to the top surfaces of the semiconductor dies to control warpage and help heat dissipation. In addition, the lid structures define a gap to allow a portion of the underfill element between the adjacent semiconductor dies to be exposed, so that stress concentration on that portion can be avoided or reduced. Accordingly, the reliability of the semiconductor die package is improved.

Abstract: A semiconductor device package and a method of forming the same are provided. The semiconductor device package includes a substrate, an electronic component, a ring structure, and an adhesive layer. The electronic component is located over a first surface of the substrate. The ring structure is located over the first surface of the substrate and surrounding the electronic component. The ring structure has a bottom surface facing the first surface of the substrate and a top surface opposite the bottom surface. The ring structure includes a plurality of side parts and a plurality of corner parts recessed from the top surface and thinner than the side parts. Any two of the corner parts are separated from one another by one of the side parts. The adhesive layer is interposed between the bottom surface of the ring structure and the first surface of the substrate.

Abstract: A method for preparing a bifunctional film, including: (a) drying a first polymer solution to form a film to form an anti-adhesion layer; and (b) drying a second polymer solution over the anti-adhesion layer to form a film to form an attachment layer. The first polymer solution includes a first hydrophobic solution and a first hydrophilic solution, and in the first polymer solution, the weight ratio of the solute of the first hydrophobic solution to the solute of the first hydrophilic solution is 1:0.01-1. Moreover, the second polymer solution consists of a second hydrophilic solution.

Abstract: A method for removing nodule defects is disclosed. The nodule defects may be formed on a non-selected portion of a semiconductor structure during formation of a semiconductor region on a selected portion of the semiconductor structure. A plasma having a higher selectivity to etch the nodule defects relative to the semiconductor region may be used to selectively remove the nodule defects on the non-selected portion.

Abstract: Provided are Chemical Mechanical Planarization (CMP) formulations that offer high and tunable Cu removal rates and low copper dishing for the broad or advanced node copper or Through Silica Via (TSV). The CMP compositions provide high selectivity of Cu film vs. other barrier layers, such as Ta, TaN, Ti, and TiN, and dielectric films, such as TEOS, low-k, and ultra low-k films. The CMP polishing formulations comprise solvent, abrasive, at least three chelators selected from the group consisting of amino acids, amino acid derivatives, organic amine, and combinations therefor; wherein at least one chelator is an amino acid or an amino acid derivative. Additionally, organic quaternary ammonium salt, corrosion inhibitor, oxidizer, pH adjustor and biocide are used in the formulations.

Abstract: A method of forming a semiconductor device includes: forming a fin protruding above a substrate, where a top portion of the fin comprises a layer stack that includes alternating layers of a first semiconductor material and a second semiconductor material; forming a dummy gate structure over the fin; forming openings in the fin on opposing sides of the dummy gate structure; forming source/drain regions in the openings; removing the dummy gate structure to expose the first semiconductor material and the second semiconductor material under the dummy gate structure; performing a first etching process to selectively remove the exposed first semiconductor material, where after the first etching process, the exposed second semiconductor material form nanostructures, where each of the nanostructures has a first shape; and after the first etching process, performing a second etching process to reshape each of the nanostructures into a second shape different from the first shape.

Abstract: An anti-curling film is provided. The anti-curling film includes a first portion and a second portion covering the first portion. The first portion includes polylactic acid (PLA), polycaprolactone (PCL), polyethylene glycol dimethacrylate (PEGDMA) and a photoinitiator. The second portion includes polycaprolactone (PCL), gelatin, hyaluronic acid (HA), alginate (AA), polyvinyl alcohol (PVA) or a combination thereof.

Abstract: A minimally invasive surgical device includes a main body, a buffer assembly and a cutter bit. The main body includes an inner tube and an outer tube, wherein the inner tube is disposed in the outer tube. An end of the buffer assembly is connected to the inner tube. The cutter bit is connected to another end of the buffer assembly, wherein the cutter bit has a cutting portion. When the cutting portion is in contact with an object, the buffer assembly is adapted to enable the cutter bit to move relatively to the inner tube to decrease a cutting force between the cutting portion and the object, and is adapted to enable the cutting portion to be tilted with a surface of the object.

Abstract: A biodegradable sealant includes: a polyethylene glycol derivative; a photoinitiator; and a solvent, wherein the content of the polyethylene glycol derivative is about 10-75 wt % in the biodegradable sealant. The polyethylene glycol derivative is obtained by a substitution reaction, and in the substitution reaction, the polyethylene glycol is modified with methacrylic anhydride.

Abstract: The present disclosure provides a method for manufacturing a porous film, including: preparing a polymer mixture solution, wherein the polymer mixture solution includes polycaprolactone and at least one hydrophobic polymer; adding solid particles as a dispersing agent to the polymer mixture solution and mixing the solid particles with the polymer mixture solution, wherein the amount of solid particles added is enough to convert the polymer mixture solution into a solid mixture; drying the solid mixture to form a film; and washing the film with a washing fluid to remove the solid particles from the film to form the porous film, wherein the weight ratio of the polycaprolactone to the at least one hydrophobic polymer is about 1:0.1-10, and wherein the weight ratio of the polycaprolactone and the at least one hydrophobic polymer to the solid particles is about 1:0.01-250.

Abstract: A drug-containing multilayer film provided. The drug-containing multilayer film includes: a drug-containing layer; and an anti-adhesion layer on a surface of the drug-containing layer. The drug-containing layer is composed of a first composition including a first polymer material and a drug, and the first polymer material includes at least one selected from the group consisting of: polylactic acid (PLA) and polyethylene glycol (PEG), and the weight ratio of the first polymer material to the drug is about 1:0.01-0.3. The anti-adhesion layer is composed of a second composition, and the second composition includes a second polymer material, and the second polymer material includes at least one selected from the group consisting of polylactic acid and polyethylene glycol.