Patents by Inventor Ming-Chieh Hsu
Ming-Chieh Hsu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230386867Abstract: A chemical dispensing system is capable of simultaneously supplying a semiconductor processing chemical for production and testing through the use of independent chemical supply lines, which reduces production downtime of an associated semiconductor process, increases throughput and capability of the semiconductor process, and/or the like. Moreover, the capability to simultaneously supply the semiconductor processing chemical for production and testing allows for an increased quantity of semiconductor processing chemical batches to be tested with minimal impact to production, which increases quality control over the semiconductor processing chemical. In addition, the independent chemical supply lines may be used to supply the semiconductor processing chemical to production while independently filtering semiconductor processing chemical directly from a storage drum through a filtration loop.Type: ApplicationFiled: August 10, 2023Publication date: November 30, 2023Inventors: Ming-Chieh HSU, Yung-Long CHEN, Fang-Pin CHIANG, Feng-An YANG, Ching-Jung HSU, Chi-Tung LAI
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Patent number: 11817329Abstract: A chemical dispensing system is capable of simultaneously supplying a semiconductor processing chemical for production and testing through the use of independent chemical supply lines, which reduces production downtime of an associated semiconductor process, increases throughput and capability of the semiconductor process, and/or the like. Moreover, the capability to simultaneously supply the semiconductor processing chemical for production and testing allows for an increased quantity of semiconductor processing chemical batches to be tested with minimal impact to production, which increases quality control over the semiconductor processing chemical. In addition, the independent chemical supply lines may be used to supply the semiconductor processing chemical to production while independently filtering semiconductor processing chemical directly from a storage drum through a filtration loop.Type: GrantFiled: May 29, 2020Date of Patent: November 14, 2023Assignee: Taiwan Semiconductor Manufacturing Company LimitedInventors: Ming-Chieh Hsu, Yung-Long Chen, Fang-Pin Chiang, Feng-An Yang, Ching-Jung Hsu, Chi-Tung Lai
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Publication number: 20230261021Abstract: Various embodiments of the present disclosure are directed towards an image sensor. The image sensor includes a deep trench isolation (DTI) structure disposed in a substrate. A pixel region of the substrate is disposed within an inner perimeter of the DTI structure. A photodetector is disposed in the pixel region of the substrate. A gate electrode structure overlies, at least partially, the pixel region of the substrate. A first gate dielectric structure partially overlies the pixel region of the substrate. A second gate dielectric structure partially overlies the pixel region of the substrate. The gate electrode structure overlies both a portion of the first gate dielectric structure and a portion of the second gate dielectric structure. The first gate dielectric structure has a first thickness. The second gate dielectric structure has a second thickness that is greater than the first thickness.Type: ApplicationFiled: May 23, 2022Publication date: August 17, 2023Inventors: Tzu-Jui Wang, Dun-Nian Yaung, Chen-Jong Wang, Ming-Chieh Hsu, Wei-Cheng Hsu, Yuichiro Yamashita
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Publication number: 20230207719Abstract: In some embodiments, the present disclosure relates to a single-photon avalanche detector (SPAD) device including a silicon substrate including a recess in an upper surface of the silicon substrate. A p-type region is arranged in the silicon substrate below a lower surface of the recess. An n-type avalanche region is arranged in the silicon substrate below the p-type region and meets the p-type region at a p-n junction. A germanium region is disposed within the recess over the p-n junction.Type: ApplicationFiled: May 20, 2022Publication date: June 29, 2023Inventors: Hung-Chang Chien, Jung-I Lin, Ming-Chieh Hsu, Kuan-Chieh Huang, Tzu-Jui Wang, Shih-Min Huang, Chen-Jong Wang, Dun-Nian Yaung, Yi-Shin Chu, Hsiang-Lin Chen
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Publication number: 20210375645Abstract: A chemical dispensing system is capable of simultaneously supplying a semiconductor processing chemical for production and testing through the use of independent chemical supply lines, which reduces production downtime of an associated semiconductor process, increases throughput and capability of the semiconductor process, and/or the like. Moreover, the capability to simultaneously supply the semiconductor processing chemical for production and testing allows for an increased quantity of semiconductor processing chemical batches to be tested with minimal impact to production, which increases quality control over the semiconductor processing chemical. In addition, the independent chemical supply lines may be used to supply the semiconductor processing chemical to production while independently filtering semiconductor processing chemical directly from a storage drum through a filtration loop.Type: ApplicationFiled: May 29, 2020Publication date: December 2, 2021Inventors: Ming-Chieh HSU, Yung-Long CHEN, Fang-Pin CHIANG, Feng-An YANG, Ching-Jung HSU, Chi-Tung LAI
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Patent number: 11121159Abstract: A photo diode includes a pixel unit, a photo conversion layer, and a dielectric layer. The pixel unit includes a pair of pixels. The photo conversion layer is above the pixel unit and has a pair of portions, each of which corresponds to a respective one of the pixels. The dielectric layer is between the portions of the photo conversion layer. A method of manufacturing the photo diode is also disclosed.Type: GrantFiled: September 23, 2019Date of Patent: September 14, 2021Assignee: Taiwan Semiconductor Manufacturing Company LimitedInventors: Tzu-Jui Wang, Keng-Yu Chou, Chun-Hao Chuang, Ming-Chieh Hsu, Ren-Jie Lin, Jen-Cheng Liu, Dun-Nian Yaung
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Publication number: 20200020729Abstract: A photo diode includes a pixel unit, a photo conversion layer, and a dielectric layer. The pixel unit includes a pair of pixels. The photo conversion layer is above the pixel unit and has a pair of portions, each of which corresponds to a respective one of the pixels. The dielectric layer is between the portions of the photo conversion layer. A method of manufacturing the photo diode is also disclosed.Type: ApplicationFiled: September 23, 2019Publication date: January 16, 2020Inventors: Tzu-Jui Wang, Keng-Yu Chou, Chun-Hao Chuang, Ming-Chieh Hsu, Ren-Jie Lin, Jen-Cheng Liu, Dun-Nian Yaung
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Patent number: 10468443Abstract: A photo diode includes a pixel unit, a photo conversion layer, and a dielectric layer. The pixel unit includes a pair of pixels. The photo conversion layer is above the pixel unit and has a pair of portions, each of which corresponds to a respective one of the pixels. The dielectric layer is between the portions of the photo conversion layer. A method of manufacturing the photo diode is also disclosed.Type: GrantFiled: December 18, 2018Date of Patent: November 5, 2019Assignee: Taiwan Semiconductor Manufacturing Company LimitedInventors: Tzu-Jui Wang, Keng-Yu Chou, Chun-Hao Chuang, Ming-Chieh Hsu, Ren-Jie Lin, Jen-Cheng Liu, Dun-Nian Yaung
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Publication number: 20190123085Abstract: A photo diode includes a pixel unit, a photo conversion layer, and a dielectric layer. The pixel unit includes a pair of pixels. The photo conversion layer is above the pixel unit and has a pair of portions, each of which corresponds to a respective one of the pixels. The dielectric layer is between the portions of the photo conversion layer. A method of manufacturing the photo diode is also disclosed.Type: ApplicationFiled: December 18, 2018Publication date: April 25, 2019Inventors: Tzu-Jui Wang, Keng-Yu Chou, Chun-Hao Chuang, Ming-Chieh Hsu, Ren-Jie Lin, Jen-Cheng Liu, Dun-Nian Yaung
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Patent number: 10177186Abstract: A photo diode includes a pixel unit, a photo conversion layer, and a dielectric layer. The pixel unit includes a pair of pixels. The photo conversion layer is above the pixel unit and has a pair of portions, each of which corresponds to a respective one of the pixels. The dielectric layer is between the portions of the photo conversion layer. A method of manufacturing the photo diode is also disclosed.Type: GrantFiled: April 1, 2016Date of Patent: January 8, 2019Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Tzu-Jui Wang, Keng-Yu Chou, Chun-Hao Chuang, Ming-Chieh Hsu, Ren-Jie Lin, Jen-Cheng Liu, Dun-Nian Yaung
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Publication number: 20170110119Abstract: An electronic interactive chanting and praying system device includes a substrate, a voice input device installed to the substrate for receiving a voice message, a control processing device installed to the substrate and coupled to the voice input device for receiving the voice message and conducting a voice recognition processing to selectively generate a light source control instruction and a sound source control instruction, a light emitting device installed to the substrate and coupled to the control processing device for executing a light emitting mode according to the light source control instruction, and a speaker installed to the substrate and coupled to the control processing device for playing a piece of religious voice information according to the sound source control instruction.Type: ApplicationFiled: October 5, 2016Publication date: April 20, 2017Inventor: MING-CHIEH HSU
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Publication number: 20160218131Abstract: A photo diode includes a pixel unit, a photo conversion layer, and a dielectric layer. The pixel unit includes a pair of pixels. The photo conversion layer is above the pixel unit and has a pair of portions, each of which corresponds to a respective one of the pixels. The dielectric layer is between the portions of the photo conversion layer. A method of manufacturing the photo diode is also disclosed.Type: ApplicationFiled: April 1, 2016Publication date: July 28, 2016Inventors: TZU-JUI WANG, KENG-YU CHOU, CHUN-HAO CHUANG, MING-CHIEH HSU, REN-JIE LIN, JEN-CHENG LIU, DUN-NIAN YAUNG
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Patent number: 9356069Abstract: A method for forming a photo diode is provided. The method includes: forming a first pair of electrodes and a second pair of electrodes over a substrate by using a conductive layer; forming a dielectric layer over the substrate; patterning the dielectric layer over the substrate; forming a photo conversion layer over the substrate; and forming a color filter layer over the photo conversion layer, wherein at least a portion of the dielectric layer separates a first portion of the color filter layer corresponding to a first pixel from a second portion of the color filter layer corresponding to a second pixel, and a refractive index of the dielectric layer is lower than a refractive index of the color filter layer, wherein the first pair of electrodes corresponds to the first pixel and the second pair of electrodes corresponds to the second pixel.Type: GrantFiled: June 5, 2015Date of Patent: May 31, 2016Assignee: Taiwan Semiconductor Manufacturing Company LimitedInventors: Tzu-Jui Wang, Keng-Yu Chou, Chun-Hao Chuang, Ming-Chieh Hsu, Ren-Jie Lin, Jen-Cheng Liu, Dun-Nian Yaung
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Publication number: 20150279901Abstract: A method for forming a photo diode is provided. The method includes: forming a first pair of electrodes and a second pair of electrodes over a substrate by using a conductive layer; forming a dielectric layer over the substrate; patterning the dielectric layer over the substrate; forming a photo conversion layer over the substrate; and forming a color filter layer over the photo conversion layer, wherein at least a portion of the dielectric layer separates a first portion of the color filter layer corresponding to a first pixel from a second portion of the color filter layer corresponding to a second pixel, and a refractive index of the dielectric layer is lower than a refractive index of the color filter layer, wherein the first pair of electrodes corresponds to the first pixel and the second pair of electrodes corresponds to the second pixel.Type: ApplicationFiled: June 5, 2015Publication date: October 1, 2015Inventors: TZU-JUI WANG, KENG-YU CHOU, CHUN-HAO CHUANG, MING-CHIEH HSU, REN-JIE LIN, JEN-CHENG LIU, DUN-NIAN YAUNG
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Patent number: 9064986Abstract: A method for forming a photo diode is provided. The method includes: forming a first bottom electrode corresponding to a first pixel and a second bottom electrode corresponding to a second pixel over a substrate; forming a dielectric layer over the substrate; patterning the dielectric layer over the substrate; forming a photo conversion layer over the substrate; and forming a top electrode over the photo conversion layer; forming a color filter layer over the top electrode, wherein at least a portion of the dielectric layer separates a first portion of the color filter layer corresponding to a first pixel from a second portion of the color filer layer corresponding to a second pixel, and a refractive index of the dielectric layer is lower than a refractive index of the color filter layer.Type: GrantFiled: September 13, 2013Date of Patent: June 23, 2015Assignee: Taiwan Semiconductor Manufacturing Company LimitedInventors: Tzu-Jui Wang, Keng-Yu Chou, Chun-Hao Chuang, Ming-Chieh Hsu, Yuichiro Yamashita, Jen-Cheng Liu, Dun-Nian Yaung
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Patent number: 9064989Abstract: A method for forming a photo diode is provided. The method includes: forming a first pair of electrodes and a second pair of electrodes over a substrate by using a conductive layer; forming a dielectric layer over the substrate; patterning the dielectric layer over the substrate; forming a photo conversion layer over the substrate; and forming a color filter layer over the photo conversion layer, wherein at least a portion of the dielectric layer separates a first portion of the color filter layer corresponding to a first pixel from a second portion of the color filer layer corresponding to a second pixel, and a refractive index of the dielectric layer is lower than a refractive index of the color filter layer, wherein the first pair of electrodes corresponds to the first pixel and the second pair of electrodes corresponds to the second pixel.Type: GrantFiled: August 30, 2013Date of Patent: June 23, 2015Assignee: Taiwan Semiconductor Manufacturing Company LimitedInventors: Tzu-Jui Wang, Keng-Yu Chou, Chun-Hao Chuang, Ming-Chieh Hsu, Ren-Jie Lin, Jen-Cheng Liu, Dun-Nian Yaung
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Publication number: 20150076637Abstract: A method for forming a photo diode is provided. The method includes: forming a first bottom electrode corresponding to a first pixel and a second bottom electrode corresponding to a second pixel over a substrate; forming a dielectric layer over the substrate; patterning the dielectric layer over the substrate; forming a photo conversion layer over the substrate; and forming a top electrode over the photo conversion layer; forming a color filter layer over the top electrode, wherein at least a portion of the dielectric layer separates a first portion of the color filter layer corresponding to a first pixel from a second portion of the color filer layer corresponding to a second pixel, and a refractive index of the dielectric layer is lower than a refractive index of the color filter layer.Type: ApplicationFiled: September 13, 2013Publication date: March 19, 2015Applicant: Taiwan Semiconductor Manufacturing Company LimitedInventors: TZU-JUI WANG, KENG-YU CHOU, CHUN-HAO CHUANG, MING-CHIEH HSU, YUICHIRO YAMASHITA, JEN-CHENG LIU, DUN-NIAN YAUNG
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Publication number: 20150061061Abstract: A method for forming a photo diode is provided. The method includes: forming a first pair of electrodes and a second pair of electrodes over a substrate by using a conductive layer; forming a dielectric layer over the substrate; patterning the dielectric layer over the substrate; forming a photo conversion layer over the substrate; and forming a color filter layer over the photo conversion layer, wherein at least a portion of the dielectric layer separates a first portion of the color filter layer corresponding to a first pixel from a second portion of the color filer layer corresponding to a second pixel, and a refractive index of the dielectric layer is lower than a refractive index of the color filter layer, wherein the first pair of electrodes corresponds to the first pixel and the second pair of electrodes corresponds to the second pixel.Type: ApplicationFiled: August 30, 2013Publication date: March 5, 2015Applicant: Taiwan Semiconductor Manufacturing Company LimitedInventors: TZU-JUI WANG, KENG-YU CHOU, CHUN-HAO CHUANG, MING-CHIEH HSU, REN-JIE LIN, JEN-CHENG LIU, DUN-NIAN YAUNG
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Patent number: 8373250Abstract: The present invention relates to a an on-chip inductor structure and a method for manufacturing the same. The an on-chip inductor structure according to the present invention comprises a substrate, a porous layer, a plurality of conductors, and an inductor. The porous layer is disposed on the substrate and has a plurality of voids; each of the plurality of conductors is disposed in the plurality of voids, respectively; and the inductor is disposed on the porous layer. Because the plurality of conductors is used as the core of the inductor, the inductance is increased effectively and the area of the an on-chip inductor is reduced. Besides the manufacturing method according to the present invention is simple and compatible with the current CMOS process, the manufacturing cost can be lowered.Type: GrantFiled: October 28, 2009Date of Patent: February 12, 2013Assignee: National Chiao Tung UniversityInventors: Tzu-Yuan Chao, Ming-Chieh Hsu, Yu-Ting Cheng, Chih Chen, Chien-Min Lin
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Publication number: 20110042782Abstract: The present invention relates to a an on-chip inductor structure and a method for manufacturing the same. The an on-chip inductor structure according to the present invention comprises a substrate, a porous layer, a plurality of conductors, and an inductor. The porous layer is disposed on the substrate and has a plurality of voids; each of the plurality of conductors is disposed in the plurality of voids, respectively; and the inductor is disposed on the porous layer. Because the plurality of conductors is used as the core of the inductor, the inductance is increased effectively and the area of the an on-chip inductor is reduced. Besides the manufacturing method according to the present invention is simple and compatible with the current CMOS process, the manufacturing cost can be lowered.Type: ApplicationFiled: October 28, 2009Publication date: February 24, 2011Applicant: NATIONAL CHIAO TUNG UNIVERSITYInventors: TZU-YUAN CHAO, MING-CHIEH HSU, YU-TING CHENG, CHIH CHEN, CHIEN-MIN LIU