Abstract: A micro light emitting device includes an epitaxial structure, a conductive layer, and a first insulating layer. The epitaxial structure has a first surface and a second surface opposite to the first surface, and includes a first semiconductor layer, an active layer and a second semiconductor layer that are arranged in such order in a direction from the first surface to the second surface. The conductive layer is formed on a surface of the first semiconductor layer away from the active layer. The first insulating layer is formed on the surface of the first semiconductor layer away from the active layer, and exposes at least a part of the conductive layer.

Abstract: A modulation device includes a substrate, an electrostatic discharge protection element, an electronic element, and a driving element. The substrate has an active region. The electrostatic discharge protection element is arranged around the active region. The electronic element is disposed in the active region. The driving element is electrically connected to the electronic element.

Abstract: A lighting device includes a light board and a light dimmer circuit. The light board includes multiple first light emitting elements and second light emitting elements. The first light emitting elements are disposed in a first area of the light board. The second light emitting elements are disposed in a second area of the light board. The light dimmer circuit is configured to drive the second light emitting elements to generate flickering lights from the second area of the light board, and is configured to drive the first light emitting elements to generate non-flickering lights from the first area of the light board.

Abstract: A semiconductor device structure is provided. The semiconductor device has a first dielectric wall between an n-type source/drain region and a p-type source/drain region to physically and electrically isolate the n-type source/drain region and the p-type source/drain region from each other. A second dielectric wall is formed between a first channel region connected to the n-type source/drain region and a second channel region connected to the p-type source/drain region. A contact is formed to physically and electrically connect the n-type source/drain region with the p-type source/drain region, wherein the contact extends over the first dielectric wall. The first electric wall has a gradually decreasing width W5 towards a tip of the dielectric wall from a top contact position between the first dielectric wall and either the n-type source/drain region or the p-type source/drain region.

Abstract: The present disclosure provides a method for treating liver cirrhosis by using a composition including mesenchymal stem cells, extracellular vesicles produced by the mesenchymal stem cells, and growth factors. The composition of the present disclosure achieves the effect of treating liver cirrhosis through various efficacy experiments.

Abstract: Methods of cutting gate structures and fins, and structures formed thereby, are described. In an embodiment, a substrate includes first and second fins and an isolation region. The first and second fins extend longitudinally parallel, with the isolation region disposed therebetween. A gate structure includes a conformal gate dielectric over the first fin and a gate electrode over the conformal gate dielectric. A first insulating fill structure abuts the gate structure and extends vertically from a level of an upper surface of the gate structure to at least a surface of the isolation region. No portion of the conformal gate dielectric extends vertically between the first insulating fill structure and the gate electrode. A second insulating fill structure abuts the first insulating fill structure and an end sidewall of the second fin. The first insulating fill structure is disposed laterally between the gate structure and the second insulating fill structure.

Abstract: Semiconductor devices are provided. A semiconductor device includes a first well region having a first conductivity type, a second well region having a second conductivity type, a cell, and a pickup tap cell. The cell includes a first forksheet structure. The first forksheet structure includes a first transistor formed over the first well region, a second transistor formed over the second well region, and a first wall structure disposed on and extending along an interface between the first and second well regions. The first transistor and the second transistor are disposed on opposite sides of the first wall structure. The pickup tap cell includes a nanosheet structure. The nanosheet structure includes a pickup transistor formed over the second well region. Source/drain features of the first transistor and the pickup transistor have the second conductivity type, and source/drain features of the second transistor have the first conductivity type.

Abstract: Some embodiments of the present disclosure relate to an integrated chip including an extended via that spans a combined height of a wire and a via and that has a smaller footprint than the wire. The extended via may replace a wire and an adjoining via at locations where the sizing and the spacing of the wire are reaching lower limits. Because the extended via has a smaller footprint than the wire, replacing the wire and the adjoining via with the extended via relaxes spacing and allows the size of the pixel to be further reduced. The extended via finds application for capacitor arrays used for pixel circuits.

Abstract: A radar signal processing system with a self-interference cancelling function includes an analog front end (AFE) processor, an analog to digital converter (ADC), an adaptive interference canceller (AIC), and a digital to analog converter (DAC). The AFE processor receives an original input signal and generates an analog input signal. The ADC converts the analog input signal to a digital input signal. The AIC generates a digital interference signal digital interference signal by performing an adaptive interference cancellation process according to the digital input signal. The DAC converts the digital interference signal to an analog interference signal. Finally, the analog interference signal is fed back to the AFE and cancelled from the original input signal in the AFE processor while performing the front end process, reducing the interference of the static interference from the leaking of a close-by transmitter during the front end process.

Abstract: An anti-peep light source module includes a light source module and a viewing angle switching module. The light source module has a light source and a light guide plate (LGP) and has light emitting elements arranged along a first direction. The viewing angle switching module is located on a transmission path of an illumination beam of the light source module and includes a viewing angle limiting element and a viewing angle adjusting element configured to change a viewing angle of the illumination beam. The viewing angle limiting element has a grating structure and is located between the viewing angle adjusting element and the light source module. an included angle between an extension direction of the grating structure and the first direction is within a range from 88 degrees to 92 degrees. The anti-peep light source module and A display device achieve favorable optical performance, user experience, and production yield.

Abstract: A semiconductor structure includes: a substrate; a first fin and a second fin disposed on the substrate and spaced apart from each other; a dielectric wall disposed on the substrate and having first and second wall surfaces; a third fin disposed on the substrate to be in direct contact with at least one of the first and second fins; a first device disposed on the first fin and including first channel features extending away from the first wall surface; a second device disposed on the second fin and including second channel features extending away from the second wall surface; at least one third device disposed on the third fin and including third channel features; and an isolation feature disposed on the substrate to permit the third device to be electrically isolated from the first and second devices. A method for manufacturing the semiconductor structure is also disclosed.

Abstract: According to an exemplary embodiment, a method of forming a vertical device is provided. The method includes: providing a protrusion over a substrate; forming an etch stop layer over the protrusion; laterally etching a sidewall of the etch stop layer; forming an insulating layer over the etch stop layer; forming a film layer over the insulating layer and the etch stop layer; performing chemical mechanical polishing on the film layer and exposing the etch stop layer; etching a portion of the etch stop layer to expose a top surface of the protrusion; forming an oxide layer over the protrusion and the film layer; and performing chemical mechanical polishing on the oxide layer and exposing the film layer.

Abstract: A compound, a solid carrier including the same and a method for preparing a nucleic acid are provided. The compound has a structure represented by Formula (1) as follows. In Formula (1), the definition of Y1, Y2, Z and * are the same as defined in the detailed description.

Abstract: A power monitoring device for identifying the state of an electric appliance based on user feedbacks and a power monitoring method thereof are provided. The power monitoring device includes a measurement module, a variation detection and search module, and an electric appliance signature database established based on user feedbacks. When the measurement module detects a variation of a power consumption feature, the variation detection and search module searches the electric appliance signature database according to the variation to obtain electric appliances similar to the variation and the states thereof. A user contributes data to the electric appliance signature database by confirming the search result, or selecting the correct electric appliance and the state thereof. When the user confirms the search result, the power monitoring device establishes an association between the electric appliance and its electric appliance signatures and updates the electric appliance signature database.

Abstract: A system and method of appropriate services detection for a smart building are disclosed in the present invention. The invention may select appropriate services for a house or a building. After a user lives in a smart building with the system of the present invention for a period of time, the system uses the service gateway to collect and analyze environment information and appliance information so as to find relationship within appliances, sensors and actuators. Thus the cloud service platform selects appropriate services for the building to avoid downloading or installing an inappropriate service by a user. Further the cloud service platform may suggest a user buying additional equipment for matching the requirement of a service. The system of the present invention may learn a relationship of devices; locate positions of devices; and automatically collect state data of appliances to identify the appliances.

Abstract: A power monitoring device for identifying the state of an electric appliance based on user feedbacks and a power monitoring method thereof are provided. The power monitoring device includes a measurement module, a variation detection and search module, and an electric appliance signature database established based on user feedbacks. When the measurement module detects a variation of a power consumption feature, the variation detection and search module searches the electric appliance signature database according to the variation to obtain electric appliances similar to the variation and the states thereof. A user contributes data to the electric appliance signature database by confirming the search result, or selecting the correct electric appliance and the state thereof. When the user confirms the search result, the power monitoring device establishes an association between the electric appliance and its electric appliance signatures and updates the electric appliance signature database.

Abstract: A high efficiency colored solar cell is described. The high efficiency colored solar cell includes a substrate, a first antireflection layer formed on the substrate, a second antireflection layer formed on the first antireflection layer. A color of a reflecting light of the high efficiency colored solar cell can be controlled according to the combination of the first antireflection layer and the second antireflection layer.

Abstract: An inner scattering billboard includes a light directing body, an advertising membrane and a light source. The light directing body contains a plurality of light directing particles inside to diffuse and direct light. Thus light rays emitted from the light source into the light directing body are scattered to allow the light directing body to become a planar light source of even luminosity. The advertising membrane has an advertising symbol located on the surface to be evenly illuminated. The billboard can be made thinner. An LED may be adopted as the light source to save electric power and reduce user's operation cost.