Abstract: A semiconductor device includes a plurality of semiconductor layers vertically separated from one another. The semiconductor device includes a gate structure that comprises a lower portion and an upper portion, wherein the lower portion wraps around each of the plurality of semiconductor layers. The semiconductor device includes a gate spacer that extends along a sidewall of the upper portion of the gate structure and has a bottom surface. A portion of the bottom surface of the gate spacer and a top surface of a topmost one of the plurality of semiconductor layers form an angle that is less than 90 degrees.

Abstract: A semiconductor device includes a plurality of channel layers vertically separated from one another. The semiconductor device also includes an active gate structure comprising a lower portion and an upper portion. The lower portion wraps around each of the plurality of channel layers. The semiconductor device further includes a gate spacer extending along a sidewall of the upper portion of the active gate structure. The gate spacer has a bottom surface. Moreover, a dummy gate dielectric layer is disposed between the gate spacer and a topmost channel layer of plurality of channel layers. The dummy gate dielectric layer is in contact with a top surface of the topmost channel layer, the bottom surface of the gate spacer, and the sidewall of the gate structure.

Abstract: A method for preloading data in a CPU pipeline is provided, which includes the following steps. When a hint instruction is executed, allocate and initiate an entry in a preload table. When a load instruction is fetched, load a piece of data from a memory into the entry according to the entry. When a use instruction which uses the data loaded by the load instruction is executed, forward the data for the use instruction from the entry instead of from the memory. When the load instruction is executed, update the entry according to the load instruction.

Abstract: A method for preloading data in a CPU pipeline is provided, which includes the following steps. When a hint instruction is executed, allocate and initiate an entry in a preload table. When a load instruction is fetched, load a piece of data from a memory into the entry according to the entry. When a use instruction which uses the data loaded by the load instruction is executed, forward the data for the use instruction from the entry instead of from the memory. When the load instruction is executed, update the entry according to the load instruction.

Abstract: An apparatus and a method for reducing TAG RAM access are provided. The apparatus includes a status recording unit and a control signal generating unit. The status recording unit compares current index data with previous index data, and records read/write status of the TAG RAMs. The control signal generating unit is coupled to the status recording unit for generating a control signal (such as a chip selecting signal) to determine whether the TAG RAMs can be accessed or not. Wherein, the control signal is enabled when the TAG RAMs is in write status, or the output of the status recording unit determines whether the control signal is disabled when the TAG RAMs is in read status.