Abstract: A method of fabricating an insulating layer starts by forming at least one gate, having at least a conductive layer and a cap oxide layer, on a surface of a semiconductor substrate. An insulating layer thicker than a height of the gate on the semiconductor substrate is then formed to follow the topography of the gate to produce an uneven surface. A planar layer is then formed on the insulating layer to form an approximately flat surface for the semiconductor substrate. By performing a planarization process, a portion of the planar layer is removed down to the surface of the insulating layer. A first etching process is then performed to completely remove the remaining portions of the planar layer. Finally, a second etching process is performed to remove the insulating layer and the cap oxide layer atop the gate, so that the remaining insulating layer outside the gate has a protrusive surface after the second etching process.

Abstract: An operating method of a semiconductor etcher includes three steps. The first step is to provide a first power for shortening a warm-up time of the etcher. The second step is to provide a second power, which is lower than the first power, to perform an etching process. The third step is to provide a third power, which is between the first and second power, for cleaning the etcher.

Abstract: An apparatus for cleaning a semiconductor wafer is disclosed to substantially improve the efficiency of the cleaning process, and reduce the quantity of cleaning solvent used. The apparatus includes a rotating table for supporting the wafer, a rotation device to rotate the rotation table, a movable or stationary curved-slab for scrubbing the surface of the wafer efficiently, a cleaning nozzle for applying a cleaning solvent or stripper on the surface of the wafer, and a resistance wall for preventing the cleaning solvent spun out from the wafer to pollute the cleaning room.

Abstract: The present invention provides an inspection method including the following steps. First, the wafer, after contact etching, will carry out a SEM's (scanning electron microscope) scanning electron beam, wherein the amplification factor is about 500 to 5000 and the scanning time is about 5 to 10 second. The surface of silicon, silicon oxide, or other insulating materials may display different color after processing electron beam scanning due to the different material charging effect. Therefore, the etching result may be determined by comparing the color shown on the SEM photograph.

Abstract: The present invention provides a vertical batch type wafer cleaning apparatus comprising a wafer bearing apparatus in a cleaning tank. The wafer bearing apparatus comprises three parallel upstanding racks and a plurality of wafer shelves arranged up and down between the three racks. Three deflections are uniformly formed at edge of each of the wafer shelves. The three racks have two cover bodies at two ends thereof to connect two rotators. The wafer bearing apparatus is driven to rotate by synchronous rotation of the two rotators. A flow distributor is provided in the cleaning tank to connect an output pipe of the cleaning solution supply tank so that cleaning solution can be distributed and transferred to between the wafer shelves. Two filter pipes are provided between the cleaning tank and the cleaning solution supply tank to let cleaning solution be used in recirculating way. The present invention has advantages of enhanced cleaning efficiency and reduced cost.

Abstract: First of all, a semiconductor substrate that has a pad oxide layer thereon is provided. Then a nitride layer is formed on the pad oxide layer. Next, a photoresist layer is formed and defined on the nitride layer. Afterward, performing a residual etching process to etch the nitride layer to form an opening and a convex remainder of the nitride layer. The convex remainder of the nitride layer and the semiconductor substrate are then etched by way of using a top rounding process to form the rounding corners on the semiconductor substrate. Subsequently, performing a process for forming the trench to form a trench with the rounding corners. Finally, the follow-up processes are performed to form the shallow trench isolation.