Patents by Inventor Ming-Da Cheng

Ming-Da Cheng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Substrate and Package Structure
    Publication number: 20210288012
    Abstract: According to an exemplary embodiment, a substrate having a first area and a second area is provided. The substrate includes a plurality of pads. Each of the pads has a pad size. The pad size in the first area is larger than the pad size in the second area.
    Type: Application
    Filed: May 28, 2021
    Publication date: September 16, 2021
    Inventors: Wei-Hung Lin, Hsiu-Jen Lin, Ming-Da Cheng, Yu-Min Liang, Chen-Shien Chen, Chung-Shi Liu
  • Method for manufacturing interconnect structure
    Patent number: 11121104
    Abstract: A conductive interconnect structure includes a contact pad; a conductive body connected to the contact pad at a first end; and a conductive layer positioned on a second end of the conductive body. The conductive body has a longitudinal direction perpendicular to a surface of the contact pad. The conductive body has an average grain size (a) on a cross sectional plane (Plane A) whose normal is perpendicular to the longitudinal direction of the conductive body. The conductive layer has an average grain size (b) on Plane A. The conductive body and the conductive layer are composed of same material, and the average grain size (a) is greater than the average grain size (b).
    Type: Grant
    Filed: January 23, 2018
    Date of Patent: September 14, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Meng-Tse Chen, Hsiu-Jen Lin, Chih-Wei Lin, Ming-Da Cheng, Chih-Hang Tung, Chung-Shi Liu
  • FORMATION METHOD OF CHIP PACKAGE WITH FAN-OUT STRUCTURE
    Publication number: 20210280520
    Abstract: A method for forming a chip package is provided. The method includes disposing a semiconductor die over a carrier substrate and forming a protection layer over the carrier substrate to surround the semiconductor die. The method also includes forming a dielectric layer over the protection layer and the semiconductor die. The method further includes planarizing a first portion of the dielectric layer and planarizing a second portion of the dielectric layer after the first portion of the dielectric layer is planarized. In addition, the method includes forming a conductive layer over the dielectric layer after the first portion and the second portion of the dielectric layer are planarized.
    Type: Application
    Filed: May 24, 2021
    Publication date: September 9, 2021
    Inventors: Shing-Chao CHEN, Chih-Wei LIN, Tsung-Hsien CHIANG, Ming-Da CHENG, Ching-Hua HSIEH
  • BUMP STRUCTURE AND METHOD OF MAKING THE SAME
    Publication number: 20210272819
    Abstract: In a method of manufacturing a semiconductor device first conductive layers are formed over a substrate. A first photoresist layer is formed over the first conductive layers. The first conductive layers are etched by using the first photoresist layer as an etching mask, to form an island pattern of the first conductive layers separated from a bus bar pattern of the first conductive layers by a ring shape groove. A connection pattern is formed to connect the island pattern and the bus bar pattern. A second photoresist layer is formed over the first conductive layers and the connection pattern. The second photoresist layer includes an opening over the island pattern. Second conductive layers are formed on the island pattern in the opening. The second photoresist layer is removed, and the connection pattern is removed, thereby forming a bump structure.
    Type: Application
    Filed: October 30, 2020
    Publication date: September 2, 2021
    Inventors: Wen-Hsiung LU, Ming-Da CHENG, Su-Fei LIN, Hsu-Lun LIU, Chien-Pin CHAN, Yung-Sheng LIN
  • Multi-Layer Structures and Methods of Forming
    Publication number: 20210265165
    Abstract: A method includes depositing a plurality of layers on a substrate, patterning a first mask overlying the plurality of layers, and performing a first etching process on the plurality of layers using the first mask. The method also includes forming a polymer material along sidewalls of the first mask and sidewalls of the plurality of layers, and removing the polymer material. The method also includes performing a second etching process on the plurality of layers using the remaining first mask, where after the second etching process terminates a combined sidewall profile of the plurality of layers comprises a first portion and a second portion, and a first angle of the first portion and a second angle of the second portion are different to each other.
    Type: Application
    Filed: May 10, 2021
    Publication date: August 26, 2021
    Inventors: Chang-Jung Hsueh, Chen-En Yen, Chin Wei Kang, Kai Jun Zhan, Wei-Hung Lin, Cheng Jen Lin, Ming-Da Cheng, Ching-Hui Chen, Mirng-Ji Lii
  • Package-on-package structures and methods for forming the same
    Patent number: 11101261
    Abstract: A package includes a package component, which further includes a top surface and a metal pad at the top surface of the package component. The package further includes a non-reflowable electrical connector over and bonded to the metal pad, and a molding material over the package component. The non-reflowable electrical connector is molded in the molding material and in contact with the molding material. The non-reflowable electrical connector has a top surface lower than a top surface of the molding compound.
    Type: Grant
    Filed: August 5, 2019
    Date of Patent: August 24, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Kuei-Wei Huang, Chih-Wei Lin, Hsiu-Jen Lin, Wei-Hung Lin, Ming-Da Cheng, Chung-Shi Liu
  • Semiconductor device and method for forming the same
    Patent number: 11101233
    Abstract: A method for forming a semiconductor device is provided. The method includes providing a substrate. The method includes forming a mask layer over a surface of the substrate. The mask layer has an opening over a portion of the surface. The method includes depositing a conductive layer over the surface and the mask layer. The method includes removing the mask layer and the conductive layer over the mask layer. The conductive layer remaining after the removal of the mask layer and the conductive layer over the mask layer forms a conductive pad. The method includes bonding a device to the conductive pad through a solder layer. The conductive pad is embedded in the solder layer.
    Type: Grant
    Filed: May 7, 2020
    Date of Patent: August 24, 2021
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chen-En Yen, Chin-Wei Kang, Kai-Jun Zhan, Wen-Hsiung Lu, Cheng-Jen Lin, Ming-Da Cheng, Mirng-Ji Lii
  • Semiconductor structure and method for forming the same
    Patent number: 11094655
    Abstract: A method for forming a semiconductor structure is provided. The method includes forming a seed layer over a substrate and forming a first mask layer over the seed layer. The method also includes forming a first trench and a second trench in the first mask layer and forming a first conductive material in the first trench and the second trench. The method further includes forming a second mask layer in the first trench and over the first conductive material, and forming a second conductive material in the second trench and on the first conductive material. A first conductive connector is formed in the first trench with a first height, a second conductive connector is formed in the second trench with a second height, and the second height is greater than the first height.
    Type: Grant
    Filed: June 13, 2019
    Date of Patent: August 17, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Wen-Hsiung Lu, Chang-Jung Hsueh, Chin-Wei Kang, Hui-Min Huang, Wei-Hung Lin, Cheng-Jen Lin, Ming-Da Cheng, Chien-Chun Wang
  • Semiconductor Package System and Method
    Publication number: 20210242150
    Abstract: A first protective layer is formed on a first die and a second die, and openings are formed within the first protective layer. The first die and the second die are encapsulated such that the encapsulant is thicker than the first die and the second die, and vias are formed within the openings. A redistribution layer can also be formed to extend over the encapsulant, and the first die may be separated from the second die.
    Type: Application
    Filed: April 19, 2021
    Publication date: August 5, 2021
    Inventors: Hui-Min Huang, Chih-Wei Lin, Tsai-Tsung Tsai, Ming-Da Cheng, Chung-Shi Liu, Chen-Hua Yu
  • Method of Forming Semiconductor Packages Having Through Package Vias
    Publication number: 20210233854
    Abstract: A semiconductor device and method for forming the semiconductor device is provided. The semiconductor device includes an integrated circuit having through vias adjacent to the integrated circuit die, wherein a molding compound is interposed between the integrated circuit die and the through vias. The through vias have a projection extending through a patterned layer, and the through vias may be offset from a surface of the patterned layer. The recess may be formed by selectively removing a seed layer used to form the through vias.
    Type: Application
    Filed: March 29, 2021
    Publication date: July 29, 2021
    Inventors: Chen-Hua Yu, Chung-Shi Liu, Chih-Wei Lin, Ming-Da Cheng
  • Semiconductor device and method of forming same
    Patent number: 11075173
    Abstract: A semiconductor package includes a first die having a first substrate, an interconnect structure overlying the first substrate and having multiple metal layers with vias connecting the multiple metal layers, a seal ring structure overlying the first substrate and along a periphery of the first substrate, the seal ring structure having multiple metal layers with vias connecting the multiple metal layers, the seal ring structure having a topmost metal layer, the topmost metal layer being the metal layer of the seal ring structure that is furthest from the first substrate, the topmost metal layer of the seal ring structure having an inner metal structure and an outer metal structure, and a polymer layer over the seal ring structure, the polymer layer having an outermost edge that is over and aligned with a top surface of the outer metal structure of the seal ring structure.
    Type: Grant
    Filed: October 10, 2019
    Date of Patent: July 27, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chih-Hsiang Tseng, Yu-Feng Chen, Cheng Jen Lin, Wen-Hsiung Lu, Ming-Da Cheng, Kuo-Ching Hsu, Hong-Seng Shue, Ming-Hong Cha, Chao-Yi Wang, Mirng-Ji Lii
  • WAFER ETCHING PROCESS AND METHODS THEREOF
    Publication number: 20210225658
    Abstract: A method includes bonding a first surface of a first semiconductor substrate to a first surface of a second semiconductor substrate and forming a cavity in the first area of the first semiconductor substrate, where forming the cavity comprises: supplying a passivation gas mixture that deposits a passivation layer on a bottom surface and sidewalls of the cavity, where during deposition of the passivation layer, a deposition rate of the passivation layer on the bottom surface of the cavity is the same as a deposition rate of the passivation layer on sidewalls of the cavity; and etching the first area of the first semiconductor substrate using an etching gas, where the etching gas is supplied concurrently with the passivation gas mixture, etching the first area of the first semiconductor substrate comprises etching in a vertical direction at a greater rate than etching in a lateral direction.
    Type: Application
    Filed: January 17, 2020
    Publication date: July 22, 2021
    Inventors: Wen-Hsiung Lu, Hui-Min Huang, Ming-Da Cheng, Wei-Hung Lin, Chen-En Yen, Hsu-Lun Liu
  • Semiconductor Device and Method
    Publication number: 20210225735
    Abstract: A through via comprising sidewalls having first scallops in a first region and second scallops in a second region and a method of forming the same are disclosed. In an embodiment, a semiconductor device includes a first substrate; and a through via extending through the substrate, the substrate including a first plurality of scallops adjacent the through via in a first region of the substrate and a second plurality of scallops adjacent the through via in a second region of the substrate, each of the scallops of the first plurality of scallops having a first depth, each of the scallops of the second plurality of scallops having a second depth, the first depth being greater than the second depth.
    Type: Application
    Filed: January 17, 2020
    Publication date: July 22, 2021
    Inventors: Hsu-Lun Liu, Wen-Hsiung Lu, Ming-Da Cheng, Chen-En Yen, Cheng-Lung Yang, Kuanchih Huang
  • SEMICONDUCTOR PACKAGE STRUCTURE
    Publication number: 20210217728
    Abstract: A semiconductor package structure includes a plurality of first dies spaced from each other, a molding layer between the first dies, a second die over the plurality of first dies and the molding layer, and an adhesive layer between the plurality of first dies and the second die, and between the molding layer and the second die. A first interface between the adhesive layer and the molding layer and a second interface between the adhesive layer and the plurality of first dies are at different levels.
    Type: Application
    Filed: March 31, 2021
    Publication date: July 15, 2021
    Inventors: JENG-NAN HUNG, CHUN-HUI YU, KUO-CHUNG YEE, YI-DA TSAI, WEI-HUNG LIN, MING-DA CHENG, CHING-HUA HSIEH
  • Semiconductor package, semiconductor device and method of forming the same
    Patent number: 11056474
    Abstract: According to an exemplary embodiment, a semiconductor package is provided. The semiconductor package includes at least one chip, and at least one component adjacent to the at least one chip, wherein the at least one chip and the at least one component are molded in a same molding body.
    Type: Grant
    Filed: November 19, 2018
    Date of Patent: July 6, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Chen-Hua Yu, Chung-Shi Liu, Chih-Fan Huang, Tsai-Tsung Tsai, Wei-Hung Lin, Ming-Da Cheng
  • Packaged Semiconductor Devices and Methods of Packaging Semiconductor Devices
    Publication number: 20210202335
    Abstract: Packaged semiconductor devices and methods of packaging semiconductor devices are disclosed. In some embodiments, a packaged semiconductor device includes an integrated circuit die, a molding compound disposed around the integrated circuit die, and an interconnect structure disposed over the integrated circuit die and the molding compound. The molding compound is thicker than the integrated circuit die.
    Type: Application
    Filed: March 15, 2021
    Publication date: July 1, 2021
    Inventors: Chen-Hua Yu, Chung-Shi Liu, Chih-Fan Huang, Chih-Wei Lin, Wei-Hung Lin, Ming-Da Cheng
  • Formation method of package structure with warpage-control element
    Patent number: 11049832
    Abstract: A method for forming a package structure is provided. The method includes forming a protective layer to surround a semiconductor die and forming a conductive structure over the protective layer. The method also includes disposing a polymer-containing material over the protective layer to partially surround the conductive structure. The method further includes curing the polymer-containing material to form a warpage-control element.
    Type: Grant
    Filed: May 18, 2020
    Date of Patent: June 29, 2021
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Hao-Jan Pei, Chih-Chiang Tsao, Wei-Yu Chen, Hsiu-Jen Lin, Ming-Da Cheng, Ching-Hua Hsieh, Chung-Shi Liu
  • Interconnect structures and methods of forming same
    Patent number: 11043463
    Abstract: Embodiments of the present disclosure include interconnect structures and methods of forming interconnect structures. An embodiment is an interconnect structure including a post-passivation interconnect (PPI) over a first substrate and a conductive connector on the PPI. The interconnect structure further includes a molding compound on a top surface of the PPI and surrounding a portion of the conductive connector, a top surface of the molding compound adjoining the conductive connector at an angle from about 10 degrees to about 60 degrees relative to a plane parallel with a major surface of the first substrate, the conductive connector having a first width at the adjoining top surface of the molding compound, and a second substrate over the conductive connector, the second substrate being mounted to the conductive connector.
    Type: Grant
    Filed: July 8, 2020
    Date of Patent: June 22, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Wen-Hsiung Lu, Hsuan-Ting Kuo, Tsung-Yuan Yu, Hsien-Wei Chen, Ming-Da Cheng, Chung-Shi Liu
  • Metal bumps and method forming same
    Patent number: 11024593
    Abstract: A method of forming an integrated circuit structure includes forming a patterned passivation layer over a metal pad, with a top surface of the metal pad revealed through a first opening in the patterned passivation layer, and applying a polymer layer over the patterned passivation layer. The polymer layer is substantially free from N-Methyl-2-pyrrolidone (NMP), and comprises aliphatic amide as a solvent. The method further includes performing a light-exposure process on the polymer layer, performing a development process on the polymer layer to form a second opening in the polymer layer, wherein the top surface of the metal pad is revealed to the second opening, baking the polymer, and forming a conductive region having a via portion extending into the second opening.
    Type: Grant
    Filed: July 1, 2019
    Date of Patent: June 1, 2021
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Ming-Da Cheng, Yung-Ching Chao, Chun Kai Tzeng, Cheng Jen Lin, Chin Wei Kang, Yu-Feng Chen, Mirng-Ji Lii
  • Substrate and package structure
    Patent number: 11024594
    Abstract: According to an exemplary embodiment, a substrate having a first area and a second area is provided. The substrate includes a plurality of pads. Each of the pads has a pad size. The pad size in the first area is larger than the pad size in the second area.
    Type: Grant
    Filed: November 26, 2018
    Date of Patent: June 1, 2021
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Wei-Hung Lin, Hsiu-Jen Lin, Ming-Da Cheng, Yu-Min Liang, Chen-Shien Chen, Chung-Shi Liu