Abstract: A method includes directing light at a first side of a semiconductor structure; detecting a first light intensity at a second side of the semiconductor structure, wherein the first light intensity corresponds to the light that penetrated the semiconductor structure from the first side to the second side; and comparing the first light intensity to a second light intensity, wherein the second light intensity corresponds to an expected intensity of light.

Abstract: A method includes forming a first conductive feature, depositing a passivation layer on a sidewall and a top surface of the first conductive feature, etching the passivation layer to reveal the first conductive feature, and recessing a first top surface of the passivation layer to form a step. The step comprises a second top surface of the passivation layer. The method further includes forming a planarization layer on the passivation layer, and forming a second conductive feature extending into the passivation layer to contact the first conductive feature.

Abstract: A collision detecting method, an electronic device, and a computer program product thereof are provided for the electronic device having an accelerometer, a positioning module, and a communication module. The method includes obtaining a plurality of acceleration variations within each of a plurality of sampling intervals respectively detected by the accelerometer. The method also includes transforming the corresponding acceleration variations into a plurality of frequency domain signals for each sampling interval, and calculating energy and entropy of the frequency domain signals. The method further includes determining a collision has occurred if the energy and the entropy corresponding to each of a plurality of specific sampling intervals among the sampling intervals both drastically increase then drastically decrease suddenly.