Abstract: An electrostatic charge-free solvent-type dryer for drying semiconductor wafers after a wet bench process is disclosed in a preferred embodiment and in an alternate embodiment. In the preferred embodiment, the electrostatic charge-free solvent-type dryer is constructed by a tank body, a wafer carrier, an elevator means, a tank cover and a conduit for feeding the flow of solvent vapor. At least one of the tank cover, the conduit for feeding the flow of solvent vapor and the plurality of partition plates is fabricated of a non-electrostatic material such that electrostatic charge is not generated in the flow of solvent vapor. In the alternate embodiment, a deionizer is further provided in the tank cavity for producing a flux of positive ions to neutralize any negative ions that are possibly produced in the flow of solvent vapor.

Abstract: An apparatus and a method for cleaning wafers by a wet bench technique without incurring ammonia vapor damages to the wafer surface are provided. The apparatus of a wet cleaning tank consists of a tank body for holding a quantity of a cleaning solution therein; a conduit mounted through and vertical to a bottom wall of the tank body for feeding an ammonia-containing solution into the tank body through an outlet; and a cup-shaped container mounted in an upside-down position over the outlet of the conduit for blocking ammonia vapor generated by the ammonia-containing solution from reaching an upper cavity of the tank body.

Abstract: An electrostatic charge-free solvent-type dryer for drying semiconductor wafers after a wet bench process is disclosed in a preferred embodiment and in an alternate embodiment. In the preferred embodiment, the electrostatic charge-free solvent-type dryer is constructed by a tank body, a wafer carrier, an elevator means, a tank cover and a conduit for feeding the flow of solvent vapor. At least one of the tank cover, the conduit for feeding the flow of solvent vapor and the plurality of partition plates is fabricated of a non-electrostatic material such that electrostatic charge is not generated in the flow of solvent vapor. In the alternate embodiment, a deionizer is further provided in the tank cavity for producing a flux of positive ions to neutralize any negative ions that are possibly produced in the flow of solvent vapor.

Abstract: An apparatus and a method for reducing solvent residue in a solvent-type dryer for drying semiconductor wafers have been disclosed. The apparatus is constructed by a tank body, a wafer carrier, an elevator means, a tank cover, a solvent vapor conduit and an exhaust means. The exhaust means is provided for fluid communication with a compartment in the tank cover such that any residual solvent vapor or any organic residue in the compartment left from the wafer drying cycle can be evacuated to a factory exhaust system. The present invention novel method for reducing solvent or organic residue in the dryer can be carried out, after the removal of the dried wafers from the dryer, by evacuating the compartment in the tank cover for a time period of between about 30 sec. and about 300 sec. until all residual solvent vapor or organic residue is evacuated.

Abstract: An apparatus and a method for cleaning wafers by a wet bench technique without incurring ammonia vapor damages to the wafer surface are provided. The apparatus of a wet cleaning tank consists of a tank body for holding a quantity of a cleaning solution therein; a conduit mounted through and vertical to a bottom wall of the tank body for feeding an ammonia-containing solution into the tank body through an outlet; and a cup-shaped container mounted in an upside-down position over the outlet of the conduit for blocking ammonia vapor generated by the ammonia-containing solution from reaching an upper cavity of the tank body.

Abstract: A method for drying wafers after a wet bench process is disclosed. In the method, a wafer is first immersed in a volume of DI water held in a container. A mixture of alcohol vapor/inert gas is then flown into the upper portion of the container that is not filled with the volume of DI water at a flow rate of less than 20 l/min. The wafer is then withdrawn from the DI water into the upper portion of the container filled with the alcohol vapor/inert gas mixture and thereby driving DI water molecules off the surface of the wafer without leaving organic residue on the wafer surface.