Patents by Inventor Ming-Do KER

Ming-Do KER has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Electrostatic discharge circuit using inductor-triggered silicon-controlled rectifier
    Patent number: 8952456
    Abstract: A representative electrostatic discharge (ESD) protection circuit includes a silicon-controlled rectifier comprising an alternating arrangement of a first P-type semiconductor material, a first N-type semiconductor material, a second P-type semiconductor material and a second N-type semiconductor material electrically coupled between an anode and a cathode. The anode is electrically coupled to the first P-type semiconductor material and the cathode is electrically coupled to the second N-type semiconductor material. The ESD protection circuit further includes an inductor electrically coupled between the anode and the second P-type semiconductor material or between the cathode and the first N-type semiconductor material.
    Type: Grant
    Filed: February 24, 2010
    Date of Patent: February 10, 2015
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Ming-Do Ker, Chun-Yu Lin
  • ELECTROSTATIC DISCHARGE CIRCUIT USING INDUCTOR-TRIGGERED SILICON-CONTROLLED RECTIFIER
    Publication number: 20110207409
    Abstract: A representative electrostatic discharge (ESD) protection circuit includes a silicon-controlled rectifier comprising an alternating arrangement of a first P-type semiconductor material, a first N-type semiconductor material, a second P-type semiconductor material and a second N-type semiconductor material electrically coupled between an anode and a cathode. The anode is electrically coupled to the first P-type semiconductor material and the cathode is electrically coupled to the second N-type semiconductor material. The ESD protection circuit further includes an inductor electrically coupled between the anode and the second P-type semiconductor material or between the cathode and the first N-type semiconductor material.
    Type: Application
    Filed: February 24, 2010
    Publication date: August 25, 2011
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Ming-Do KER, Chun-Yu LIN