Abstract: Some embodiments relate to a pixel array, including: a substrate; a plurality of photodetectors within the substrate; a deep trench isolation (DTI) structure with segments extending between photodetectors of the plurality of photodetectors, the DTI structure comprising: a first oxide layer having a first oxygen density; a first metal oxide layer lining inner sidewalls of the first oxide layer and having a second oxygen density greater than the first oxygen density; a second oxide layer lining inner sidewalls of the first metal oxide layer and having a third oxygen density less than the second oxygen density; and a second metal oxide layer lining inner sidewalls of the second oxide layer and having a fourth oxygen density greater than the third oxygen density.

Abstract: An optical device and a method of fabricating the same are disclosed. The optical device includes a first die layer and a second die layer. The first die layer includes a first substrate having a first surface and a second surface opposite to the first surface, first and second pixel structures, an inter-pixel isolation structure disposed in the first substrate and surrounding the first and second pixel structures, and a floating diffusion region disposed in the first substrate and between the first and second pixel structures. The second die layer includes a second substrate having a third surface and a fourth surface opposite to the third surface and a pixel transistor group disposed on the third surface of the second substrate and electrically connected to the first and second pixel structures.

Abstract: The present disclosure, in some embodiments, relates to an image sensor integrated chip. The image sensor integrated chip includes a plurality of gate structures arranged along a first side of a substrate within a plurality of pixel regions. An etch block structure is arranged on the first side of the substrate between neighboring ones of the plurality of gate structures. A contact etch stop layer (CESL) is arranged on the etch block structure between the neighboring ones of the plurality of gate structures. An isolation structure is disposed between one or more sidewalls of the substrate and extends from a second side of the substrate to the first side of the substrate. The etch block structure is vertically between the isolation structure and the CESL.

Abstract: Some embodiments relate to A deep trench isolation (DTI) structure, including: a DTI core extending into a substrate; a first film surrounding the DTI core and having a first material with a first conduction band at a first band energy; a second film between the first film and the DTI core, the second film having a second material with a second conduction band at a second band energy less than the first band energy; and a third film between the second film and the DTI core, the third film having a third material with a third conduction band at a third band energy greater than the second band energy.

Abstract: Some embodiments relate to A deep trench isolation (DTI) structure, including: a DTI core extending into a substrate; a first film surrounding the DTI core and having a first material with a first conduction band at a first band energy; a second film between the first film and the DTI core, the second film having a second material with a second conduction band at a second band energy less than the first band energy; and a third film between the second film and the DTI core, the third film having a third material with a third conduction band at a third band energy greater than the second band energy.

Abstract: An optical device and a method of fabricating the same are disclosed. The optical device includes a first die layer and a second die layer. The first die layer includes a first substrate having a first surface and a second surface opposite to the first surface, first and second pixel structures, an inter-pixel isolation structure disposed in the first substrate and surrounding the first and second pixel structures, and a floating diffusion region disposed in the first substrate and between the first and second pixel structures. The second die layer includes a second substrate having a third surface and a fourth surface opposite to the third surface and a pixel transistor group disposed on the third surface of the second substrate and electrically connected to the first and second pixel structures.

Abstract: The present disclosure, in some embodiments, relates to an image sensor integrated chip. The image sensor integrated chip includes a plurality of gate structures arranged along a first side of a substrate within a plurality of pixel regions. An etch block structure is arranged on the first side of the substrate between neighboring ones of the plurality of gate structures. A contact etch stop layer (CESL) is arranged on the etch block structure between the neighboring ones of the plurality of gate structures. An isolation structure is disposed between one or more sidewalls of the substrate and extends from a second side of the substrate to the first side of the substrate. The etch block structure is vertically between the isolation structure and the CESL.

Abstract: A process of forming a back side deep trench isolation structure for an image sensing device includes etching first trenches in the back side of a semiconductor substrate, lining the first trenches with dielectric, depositing passivation layers over and within the first trenches, and etching second trenches through the passivation layers into the first trenches, and filling the second trenches to form a substrate-embedded metal grid. Optionally, the bottoms of the first trenches are filled by depositing and etching a lower fill material prior to depositing the passivation layers. The method prevents the passivation layers from pinching off in a way that causes voids within the first trenches. The result is better optical performance such as increased quantum efficiency and reduced crosstalk.

Abstract: The present disclosure relates to an integrated chip. The integrated chip includes an image sensing element disposed within a substrate. A gate structure is disposed along a front-side of the substrate. A back-side of the substrate includes one or more first angled surfaces defining a central diffuser disposed over the image sensing element. The back-side of the substrate further includes second angled surfaces defining a plurality of peripheral diffusers laterally surrounding the central diffuser. The plurality of peripheral diffusers are a smaller size than the central diffuser.

Abstract: The present disclosure relates to an integrated chip. The integrated chip includes an image sensing element disposed within a substrate. A gate structure is disposed along a front-side of the substrate. A back-side of the substrate includes one or more first angled surfaces defining a central diffuser disposed over the image sensing element. The back-side of the substrate further includes second angled surfaces defining a plurality of peripheral diffusers laterally surrounding the central diffuser. The plurality of peripheral diffusers are a smaller size than the central diffuser.

Abstract: The present disclosure relates to an integrated chip. The integrated chip includes an image sensing element disposed within a substrate. A gate structure is disposed along a front-side of the substrate. A back-side of the substrate includes one or more first angled surfaces defining a central diffuser disposed over the image sensing element. The back-side of the substrate further includes second angled surfaces defining a plurality of peripheral diffusers laterally surrounding the central diffuser. The plurality of peripheral diffusers are a smaller size than the central diffuser.

Abstract: A fastening assembly for a door mirror is provided. The door mirror has an auxiliary mirror including, at its rear, a longitudinal block including two slits and a knurled surface, and a scale. The assembly includes a C-shaped frame having hingedly coupled upper and lower bars and upper and lower arms. Each arm includes an interior knurled surface. The upper and the lower arms and the auxiliary mirror are threadedly secured together for engaging the knurled surfaces. The door mirror can be fitted in a space confined by the bars and the arms by adjusting positions of the knurled surfaces of the arms relative to the knurled surface of the block by performing an unfastening and fastening of the arms and the block while observing the scale. The door mirror is fastened in the space by tightening elastic straps over the rear of the door mirror.

Abstract: A monitoring method for photoresist regeneration, a process and a system for the same are provided. In the photoresist regeneration process of the invention, the solid content and viscosity of photoresist are adjusted by condensation under reduced pressure or dilution with photoresist thinner until the final solid content and viscosity reach the predetermined values thereof obtained through the quantification equation of the invention and then the waste photoresist is caused to pass through filters for removing pollution particles contained therein, such that the regenerated photoresist is acquired.

Abstract: A fastening assembly for door mirror is provided. The door mirror has an auxiliary mirror including, at its rear, a longitudinal block including two slits and a knurled surface, and a scale. The assembly comprises a C-shaped frame comprising hingedly coupled upper and lower bars and upper and lower arms. Each arm includes in interior knurled surface. The upper and the lower arms and the auxiliary mirror are threadedly secured together for engaging the knurled surfaces. Responsive to fitting the door mirror in a space confined by the bars and the arms by adjusting positions of the knurled surfaces of the arms relative to the knurled surface of the block by performing an unfastening and fastening of the arms and the block by observing the scale, fasten the door mirror in the space by tightening elastic straps over the rear of the door mirror.

Abstract: A fastening mechanism for a door mirror comprises an upper arm secured to an upper bar, the upper arm including a downward loop having a first knurled surface, and a mated lower arm secured to a lower bar, the lower arm including an upward loop having a second knurled surface engaged with the first knurled surface for enabling the arms to move each other until the door mirror can be fitted in a space confined by the bars and the arms; and a trigger having a threaded pin driven through a cap and the loops into a nut of the auxiliary mirror for fastening the auxiliary mirror and the frame together. Snap fasteners of elastic straps of the lower bar are snapped onto risers of the upper bar by crossing the elastic straps over the door mirror prior to stretching the elastic straps for fastening the door mirror.

Abstract: A telescopic side view mirror for automobiles including a housing, a fixing tubular member formed with an inner tubular member having a longitudinal groove at a bottom, a stopper being fixedly mounted in the longitudinal groove of the inner tubular member, an outer tubular member extending into the housing and fixedly mounted therein, a tubular connector fitted in the housing and formed with a slot having a first threaded hole engaged with a first bolt, a second threaded hole aligned with the hole of the outer tubular member, and two protuberances one close to an end thereof, and a positioning member fitted between the slot of the tubular connector and the longitudinal groove of the inner tubular member, whereby the mirror can be easily adjusted in position.