Patents by Inventor Ming-Fa Wu
Ming-Fa Wu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 11530479Abstract: In an embodiment, a method of forming a semiconductor device includes forming a hydrophobic coating on an inner surface of an exhaust line, connecting the exhaust line to a semiconductor processing chamber, introducing a first precursor into the semiconductor processing chamber, introducing a second precursor into the semiconductor processing chamber, wherein the first precursor reacts with the second precursor to form a layer of oxide material, and pumping the first precursor and the second precursor from the semiconductor processing chamber and through the exhaust line.Type: GrantFiled: October 18, 2019Date of Patent: December 20, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chung-Ting Ko, Wen-Ju Chen, Wan-Chen Hsieh, Ming-Fa Wu, Tai-Chun Huang, Yung-Cheng Lu, Chi On Chui
-
Patent number: 11525185Abstract: Methods and devices are provided wherein rotational gas-flow is generated by vortex generators to decontaminate dirty gas (e.g., gas contaminated by solid particles) in pumping lines of vacuum systems suitable for use at a semiconductor integrated circuit fabrication facility. The vacuum systems use filterless particle decontamination units wherein rotational gas-flow is applied to separate and trap solid particles from gas prior to the gas-flow entering a vacuum pump. Methods are also described whereby solid deposits along portions of pumping lines may be dislodged and removed and portions of pumping lines may be self-cleaning.Type: GrantFiled: September 17, 2019Date of Patent: December 13, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Ming-Fa Wu, Wen-Lung Ho, Huai-Tei Yang
-
Publication number: 20220364234Abstract: A method of forming a metal oxide layer includes at least the following steps. A substrate is provided in a process chamber of a deposition apparatus, where the substrate has a target layer formed thereon. A first gas and a second gas are introduced into the process chamber through a shower head of the deposition apparatus, so as to form a metal oxide film on the target layer, where the shower head is coated with a hydrophobic film. A patterned photoresist layer is formed on the metal oxide film. The metal oxide film is patterned by using the patterned photoresist layer as a mask, so as to form a patterned metal oxide film. The target layer is patterned by using the patterned metal oxide film as a mask.Type: ApplicationFiled: July 25, 2022Publication date: November 17, 2022Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ming-Fa Wu, Wen-Lung Ho, Jheng-Long Chen
-
Publication number: 20220356567Abstract: Methods and devices are provided wherein rotational gas-flow is generated by vortex generators to decontaminate dirty gas (e.g., gas contaminated by solid particles) in pumping lines of vacuum systems suitable for use at a semiconductor integrated circuit fabrication facility. The vacuum systems use filterless particle decontamination units wherein rotational gas-flow is applied to separate and trap solid particles from gas prior to the gas-flow entering a vacuum pump. Methods are also described whereby solid deposits along portions of pumping lines may be dislodged and removed and portions of pumping lines may be self-cleaning.Type: ApplicationFiled: July 20, 2022Publication date: November 10, 2022Inventors: Ming-Fa Wu, Wen-Lung Ho, Huai-Tei Yang
-
Publication number: 20220356573Abstract: In an embodiment, a method of forming a semiconductor device includes forming a hydrophobic coating on an inner surface of an exhaust line, connecting the exhaust line to a semiconductor processing chamber, introducing a first precursor into the semiconductor processing chamber, introducing a second precursor into the semiconductor processing chamber, wherein the first precursor reacts with the second precursor to form a layer of oxide material, and pumping the first precursor and the second precursor from the semiconductor processing chamber and through the exhaust line.Type: ApplicationFiled: July 20, 2022Publication date: November 10, 2022Inventors: Chung-Ting Ko, Wen-Ju Chen, Wan-Chen Hsieh, Ming-Fa Wu, Tai-Chun Huang, Yung-Cheng Lu, Chi On Chui
-
Patent number: 11219115Abstract: An extreme ultra-violet (EUV) lithography system includes an EUV source and EUV scanner. A droplet generator provides a droplet stream in the EUV source. A gas shield is configured to surround the droplet stream. When a laser reacts a droplet in the stream EUV radiation and ionized particles are produced. The gas shield can reduce contamination resulting from the ionized particles by conveying the ionized particles to a droplet catcher. Components of the EUV source may be biased with a voltage to repel or attract ionized particles to reduce contamination from the ionized particles.Type: GrantFiled: April 3, 2020Date of Patent: January 4, 2022Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ming-Fa Wu, Tzung-Chi Fu, Chun Che Lin, Po-Chung Cheng, Huai-Tei Yang
-
Publication number: 20210115557Abstract: In an embodiment, a method of forming a semiconductor device includes forming a hydrophobic coating on an inner surface of an exhaust line, connecting the exhaust line to a semiconductor processing chamber, introducing a first precursor into the semiconductor processing chamber, introducing a second precursor into the semiconductor processing chamber, wherein the first precursor reacts with the second precursor to form a layer of oxide material, and pumping the first precursor and the second precursor from the semiconductor processing chamber and through the exhaust line.Type: ApplicationFiled: October 18, 2019Publication date: April 22, 2021Inventors: Chung-Ting Ko, Amelia Chen, Wan-Chen Hsieh, Ming-Fa Wu, Tai-Chun Huang, Yung-Cheng Lu, Chi On Chui
-
Publication number: 20210079522Abstract: Methods and devices are provided wherein rotational gas-flow is generated by vortex generators to decontaminate dirty gas (e.g., gas contaminated by solid particles) in pumping lines of vacuum systems suitable for use at a semiconductor integrated circuit fabrication facility. The vacuum systems use filterless particle decontamination units wherein rotational gas-flow is applied to separate and trap solid particles from gas prior to the gas-flow entering a vacuum pump. Methods are also described whereby solid deposits along portions of pumping lines may be dislodged and removed and portions of pumping lines may be self-cleaning.Type: ApplicationFiled: September 17, 2019Publication date: March 18, 2021Inventors: Ming-Fa Wu, Wen-Lung Ho, Huai-Tei Yang
-
Publication number: 20210032750Abstract: Provided is a deposition apparatus including a process chamber, a wafer platen and a shower head. The wafer platen is disposed in the process chamber. The shower head is located over the wafer platen and includes a shower plate and a hydrophobic film. The shower head has a plurality of dispensing holes for a reaction gas to pass through. The hydrophobic film is coated on a surface of the shower plate and surfaces of the plurality of dispensing holes. A method of forming a metal oxide layer using the deposition apparatus is further provided.Type: ApplicationFiled: February 11, 2020Publication date: February 4, 2021Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Ming-Fa Wu, Wen-Lung Ho, Jheng-Long Chen
-
Publication number: 20200236768Abstract: An extreme ultra-violet (EUV) lithography system includes an EUV source and EUV scanner. A droplet generator provides a droplet stream in the EUV source. A gas shield is configured to surround the droplet stream. When a laser reacts a droplet in the stream EUV radiation and ionized particles are produced. The gas shield can reduce contamination resulting from the ionized particles by conveying the ionized particles to a droplet catcher. Components of the EUV source may be biased with a voltage to repel or attract ionized particles to reduce contamination from the ionized particles.Type: ApplicationFiled: April 3, 2020Publication date: July 23, 2020Inventors: Ming-Fa Wu, Tzung-Chi Fu, Chun Che Lin, Po-Chung Cheng, Huai-Tei Yang
-
Patent number: 10631392Abstract: An extreme ultra-violet (EUV) lithography system includes an EUV source and EUV scanner. A droplet generator provides a droplet stream in the EUV source. A gas shield is configured to surround the droplet stream. When a laser reacts a droplet in the stream, EUV radiation and ionized particles are produced. The gas shield can reduce contamination resulting from the ionized particles by conveying the ionized particles to a droplet catcher. Components of the EUV source may be biased with a voltage to repel or attract ionized particles to reduce contamination from the ionized particles.Type: GrantFiled: April 30, 2018Date of Patent: April 21, 2020Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ming-Fa Wu, Tzung-Chi Fu, Chun-Che Lin, Po-Chung Cheng, Huai-Tei Yang
-
Publication number: 20190335571Abstract: An extreme ultra-violet (EUV) lithography system includes an EUV source and EUV scanner. A droplet generator provides a droplet stream in the EUV source. A gas shield is configured to surround the droplet stream. When a laser reacts a droplet in the stream, EUV radiation and ionized particles are produced. The gas shield can reduce contamination resulting from the ionized particles by conveying the ionized particles to a droplet catcher. Components of the EUV source may be biased with a voltage to repel or attract ionized particles to reduce contamination from the ionized particles.Type: ApplicationFiled: April 30, 2018Publication date: October 31, 2019Inventors: Ming-Fa Wu, Tzung-Chi Fu, Chun-Che Lin, Po-Chung Cheng, Huai-Tei Yang
-
Patent number: 7742271Abstract: A HomePlug apparatus is electrically connected to a power network and includes a HomePlug processing circuit and a surge protecting circuit. The HomePlug processing circuit is electrically connected to the surge protecting circuit. The surge protecting circuit has at least one inductor, at least one capacitor and at least one arrester. The inductor is electrically connected to the power network. The arrester is electrically connected to a ground. The inductor, the capacitor and the arrester are connected in series to guide a surge originated from the power network to the ground.Type: GrantFiled: December 3, 2007Date of Patent: June 22, 2010Assignee: Delta Networks, Inc.Inventors: Yu-Cheng Chen, Yun-Teng Shih, Ming-Fa Wu, Han-Cheng Hsu
-
Publication number: 20080137242Abstract: A HomePlug apparatus is electrically connected to a power network and includes a HomePlug processing circuit and a surge protecting circuit. The HomePlug processing circuit is electrically connected to the surge protecting circuit. The surge protecting circuit has at least one inductor, at least one capacitor and at least one arrester. The inductor is electrically connected to the power network. The arrester is electrically connected to a ground. The inductor, the capacitor and the arrester are connected in series to guide a surge originated from the power network to the ground.Type: ApplicationFiled: December 3, 2007Publication date: June 12, 2008Inventors: Yu-Cheng Chen, Yun-Teng Shih, Ming-Fa Wu, Han-Cheng Hsu
-
Publication number: 20080055052Abstract: A power line communication (PLC) device, which is electrically connected with a power line, a power transforming device and an electronic device, includes a transmission element, a power transmitting element and a data transmission element. The transmission element is electrically connected with the power line for receiving a power source and communicating a data through the power line. The power transmitting element, which is electrically connected with the transmission element and the power transforming device, transmits the power source to the power transforming device, so that the power transforming device generates a work power to the electronic device. The data transmission element is electrically connected with the transmission element and the electronic device for transmitting the data to the electronic device.Type: ApplicationFiled: August 6, 2007Publication date: March 6, 2008Inventors: Jen-Ho Chang, Ming-Fa Wu, Han-Cheng Hsu
-
Publication number: 20070014304Abstract: An Ethernet adapter is electrically connected between a power line and an Internet apparatus. The Ethernet adapter includes a power converter and a data transmission processor. The power converter is electrically connected to the power line for converting power provided by the power line and outputting a converted result to the data transmission processor. The data transmission processor is stacked with the power converter and electrically connected to the power line for transmitting a data signal from the power line to the Internet apparatus.Type: ApplicationFiled: April 5, 2006Publication date: January 18, 2007Inventors: Ming-Fa Wu, Jen-Ho Chang, Han-Cheng Hsu