Abstract: Manufacturing of a shoe is enhanced by creating 3-D models of shoe parts. For example, a laser beam may be projected onto a shoe-part surface, such that a projected laser line appears on the shoe part. An image of the projected laser line may be analyzed to determine coordinate information, which may be converted into geometric coordinate values usable to create a 3-D model of the shoe part. Once a 3-D model is known and is converted to a coordinate system recognized by shoe-manufacturing tools, certain manufacturing steps may be automated.

Abstract: Manufacturing of a shoe or a portion of a shoe is enhanced by executing various shoe-manufacturing processes in an automated fashion. For example, information describing a shoe part may be determined, such as an identification, an orientation, a color, a surface topography, an alignment, a size, etc. Based on the information describing the shoe part, automated shoe-manufacturing apparatuses may be instructed to apply various shoe-manufacturing processes to the shoe part, such as a pickup and placement of the shoe part with a pickup tool.

Abstract: Interconnect structure packages (e.g., through silicon vias (TSV) packages, through interlayer via (TIV) packages) may be pre-manufactured as opposed to forming TIVs directly on a carrier substrate during a manufacturing process for a semiconductor die package at backend packaging facility. The interconnect structure packages may be placed onto a carrier substrate during manufacturing of a semiconductor device package, and a semiconductor die package may be placed on the carrier substrate adjacent to the interconnect structure packages. A molding compound layer may be formed around and in between the interconnect structure packages and the semiconductor die package.

Abstract: A phase change memory and a method of fabricating the same are provided. The phase change memory includes a lower electrode, an annular heater disposed over the lower electrode, an annular phase change layer disposed over the annular heater, and an upper electrode. The annular phase change layer and the annular heater are misaligned in a normal direction of the lower electrode. The upper electrode is disposed over the annular phase change layer, in which the upper electrode is in contact with an upper surface of the annular phase change layer. The present disclosure simplifies the manufacturing process of the phase change memory, reduces the manufacturing cost, and improves the manufacturing yield. In addition, a contact surface between the heater and the phase change layer of the phase change memory of the present disclosure is very small, so that the phase change memory has an extremely low reset current.

Abstract: A phase change memory and a method of fabricating the same are provided. The phase change memory includes a lower electrode, an annular heater disposed over the lower electrode, an annular phase change layer disposed over the annular heater, and an upper electrode. The annular phase change layer and the annular heater are misaligned in a normal direction of the lower electrode. The upper electrode is disposed over the annular phase change layer, in which the upper electrode is in contact with an upper surface of the annular phase change layer. The present disclosure simplifies the manufacturing process of the phase change memory, reduces the manufacturing cost, and improves the manufacturing yield. In addition, a contact surface between the heater and the phase change layer of the phase change memory of the present disclosure is very small, so that the phase change memory has an extremely low reset current.

Abstract: A phase change memory and a method of fabricating the same are provided. The phase change memory includes a lower electrode, an annular heater, an annular phase change layer, and an upper electrode. The annular heater is disposed over the lower electrode. The annular phase change layer is disposed over the annular heater, and the annular phase change layer and the annular heater are misaligned in a normal direction of the lower electrode. The upper electrode is disposed over the annular phase change layer. The present disclosure simplifies the manufacturing process of the phase change memory, reduces the manufacturing cost, and improves the manufacturing yield. In addition, a contact surface between the heater and the phase change layer of the phase change memory of the present disclosure is very small, so that the phase change memory has an extremely low reset current.

Abstract: A phase change memory and a method of fabricating the same are provided. The phase change memory includes a lower electrode, an annular heater, an annular phase change layer, and an upper electrode. The annular heater is disposed over the lower electrode. The annular phase change layer is disposed over the annular heater, and the annular phase change layer and the annular heater are misaligned in a normal direction of the lower electrode. The upper electrode is disposed over the annular phase change layer. The present disclosure simplifies the manufacturing process of the phase change memory, reduces the manufacturing cost, and improves the manufacturing yield. In addition, a contact surface between the heater and the phase change layer of the phase change memory of the present disclosure is very small, so that the phase change memory has an extremely low reset current.

Abstract: A manufacturing method of a non-volatile memory is provided. A tunneling dielectric layer, a first conductive pattern, and isolation structures are formed on a substrate. Using a first photoresist layer as a mask, the first conductive pattern is partially removed to form a first opening exposing the substrate. An insulating layer is formed to fill the first opening and cover the first conductive pattern and the isolation structures. Using a second photoresist layer shielding a portion of the first conductive pattern as a mask, the insulating layer surrounding the first conductive pattern is removed to form a patterned insulating layer having a second opening exposing a portion of the first conductive pattern. An inter-gate dielectric layer and a second conductive pattern are formed on the first conductive pattern to fill the second opening, the first conductive pattern forms a floating gate, and the second conductive pattern forms a control gate.

Abstract: A manufacturing method of a non-volatile memory is provided. A tunneling dielectric layer, a first conductive pattern, and isolation structures are formed on a substrate. Using a first photoresist layer as a mask, the first conductive pattern is partially removed to form a first opening exposing the substrate. An insulating layer is formed to fill the first opening and cover the first conductive pattern and the isolation structures. Using a second photoresist layer shielding a portion of the first conductive pattern as a mask, the insulating layer surrounding the first conductive pattern is removed to form a patterned insulating layer having a second opening exposing a portion of the first conductive pattern. An inter-gate dielectric layer and a second conductive pattern are formed on the first conductive pattern to fill the second opening, the first conductive pattern forms a floating gate, and the second conductive pattern forms a control gate.

Abstract: An antenna device utilized in a wireless communication device having a lid, a chassis and a hinge is disclosed. The antenna device includes a radiating module disposed in the lid or the hinge and moving in response to movement of the lid, for transmitting or receiving radio-frequency signals; and a metal barricade disposed in an area apart from the radiating module by a specified distance on the chassis.

Abstract: The present invention discloses an antenna system for a wireless communication device, which includes a first metal slice formed with a first slot structure, a second metal slice formed with a second slot structure, a first signal transmission line, and a second signal transmission line, wherein when the first metal slice and the second metal slice are not connected and have a distance between each other, a feeding direction of the first transmission corresponding to the first metal slice is substantially opposite to a feeding direction of the second transmission corresponding to the second metal slice; or when the first metal slice and the second metal slice are partially connected, a feeding direction of the first transmission corresponding to the first metal slice is substantially the same as or different to a feeding direction of the second transmission corresponding to the second metal slice.

Abstract: A dual-band antenna utilized in a wireless communication device for receiving or transmitting wireless signals of a first frequency band and a second frequency band includes a rectangular metal plane formed with a slot structure substantially extending from a first side to a second side of the rectangular metal plane, a feeding terminal formed on the rectangular metal plane, and a grounding element, disposed on a third side or a fourth side of the rectangular metal plane, for electrically connecting the rectangular metal plane and a system ground of the wireless communication device, wherein the first side is substantially parallel to the second side, the third side is substantially parallel to the fourth side, and the first side is substantially perpendicular to the third side or the fourth side.

Abstract: An antenna device for a wireless communication device is disclosed. The antenna device includes a metal plate including a radiating element formed with at least a slot structure and a feed-in terminal and a grounding element, and a connecting unit electrically connected between the grounding element and a system grounding unit of the wireless communication device.

Abstract: The present invention discloses an antenna system for a wireless communication device, which includes a first metal slice formed with a first slot structure, a second metal slice formed with a second slot structure, a first signal transmission line, and a second signal transmission line, wherein when the first metal slice and the second metal slice are not connected and have a distance between each other, a feeding direction of the first transmission corresponding to the first metal slice is substantially opposite to a feeding direction of the second transmission corresponding to the second metal slice; or when the first metal slice and the second metal slice are partially connected, a feeding direction of the first transmission corresponding to the first metal slice is substantially the same as or different to a feeding direction of the second transmission corresponding to the second metal slice.

Abstract: An antenna device utilized in a wireless communication device having a lid, a chassis and a hinge is disclosed. The antenna device includes a radiating module disposed in the lid or the hinge and moving in response to movement of the lid, for transmitting or receiving radio-frequency signals; and a metal barricade disposed in an area apart from the radiating module by a specified distance on the chassis.

Abstract: A radio-frequency (RF) device for a wireless communication device includes an antenna disposition area, and a plurality of antennas of a same type, formed in the antenna disposition area by different arrangements, for receiving or transmitting a plurality of wireless signals of a same frequency band.

Abstract: A dual-band antenna utilized in a wireless communication device for receiving or transmitting wireless signals of a first frequency band and a second frequency band includes a rectangular metal plane formed with a slot structure substantially extending from a first side to a second side of the rectangular metal plane, a feeding terminal formed on the rectangular metal plane, and a grounding element, disposed on a third side or a fourth side of the rectangular metal plane, for electrically connecting the rectangular metal plane and a system ground of the wireless communication device, wherein the first side is substantially parallel to the second side, the third side is substantially parallel to the fourth side, and the first side is substantially perpendicular to the third side or the fourth side.

Abstract: A method of traffic condition notification, adapted to a traffic information center, the method has steps are: receiving at least one travel information in a observing period, the travel information includes at least a travel time which had been taken on a predetermined distance; according to at least two travel information, determining a trend; and updating the travel information based on the trend, and broadcasting the new traffic information.

Abstract: A radio-frequency (RF) device for a wireless communication device includes an antenna disposition area, and a plurality of antennas of a same type, formed in the antenna disposition area by different arrangements, for receiving or transmitting a plurality of wireless signals of a same frequency band.

Abstract: A phone service method includes: receiving a subscription request from a subscriber, which contains a phone number of the subscriber and a phone number specified by the subscriber; in response to the subscription request, assigning a temporary phone number to the phone number of the subscriber with reference to the phone number specified by the subscriber and a mapping table; and storing the temporary phone number, the phone number of the subscriber, the phone number specified by the subscriber in the mapping table, thereby mapping the temporary phone number to the phone number of the subscriber for the communications with the phone number specified by the subscriber. A server that implements the phone service method is also disclosed.