Abstract: Provided are a passivation layer for forming a semiconductor bonding structure, a sputtering target making the same, a semiconductor bonding structure and a semiconductor bonding process. The passivation layer is formed on a bonding substrate by sputtering the sputtering target; the passivation layer and the sputtering target comprise a first metal, a second metal or a combination thereof. The bonding substrate comprises a third metal. Based on a total atom number of the surface of the passivation layer, O content of the surface of the passivation layer is less than 30 at %; the third metal content of the surface of the passivation layer is less than or equal to 10 at %. The passivation layer has a polycrystalline structure. The semiconductor bonding structure sequentially comprises a first bonding substrate, a bonding layer and a second bonding substrate: the bonding layer is mainly formed by the passivation layer and the third metal.

Abstract: An electronic device includes a clock generating circuit, a receiving circuit and a training circuit. The clock generating circuit generates a sampling clock signal, a phase-early sampling clock signal and a phase-late sampling clock signal. The receiving circuit samples received data according to the sampling clock signal, the phase-early sampling clock signal and the phase-late sampling clock signal to generate a sample result. The training circuit controls the clock generating circuit to generate the sampling clock signal and the corresponding phase-early sampling clock signal and phase-late sampling clock signal that have different phases in a plurality of different time intervals, respectively, to cause the receiving circuit to generate a plurality of sample results. The training circuit further determines a sampling phase of the sampling clock signal according to the sample results.

Abstract: An electronic device includes a clock generating circuit, a receiving circuit and a training circuit. The clock generating circuit generates a sampling clock signal, a phase-early sampling clock signal and a phase-late sampling clock signal. The receiving circuit samples received data according to the sampling clock signal, the phase-early sampling clock signal and the phase-late sampling clock signal to generate a sample result. The training circuit controls the clock generating circuit to generate the sampling clock signal and the corresponding phase-early sampling clock signal and phase-late sampling clock signal that have different phases in a plurality of different time intervals, respectively, to cause the receiving circuit to generate a plurality of sample results. The training circuit further determines a sampling phase of the sampling clock signal according to the sample results.