Abstract: An antenna module, including a feed point, a ground plane, a main radiator, and a parasitic radiator, is provided. The main radiator includes a first portion, a second portion, and a third portion. The first portion and the second portion extend from the feed point and meet at an intersection after turning. The third portion has a first section and a second section. The first section of the third portion is connected to the intersection, and the second section is connected to the ground plane. The parasitic radiator is connected to the second section and extends towards the first section of the third portion and keeps a coupling gap away from the first section.

Abstract: In some examples, the disclosure describes a device that includes a docking station and a processor. The processor may determine that an error condition involving disconnection of a computing device from the docking station couplable to the computing device has occurred and receive, responsive to the determination, a signal indicative of performance of an operation to re-establish communication with the docking station. The processor may further perform, responsive to receipt of the signal, the operation to re-establish communication with the docking station.

Abstract: Adaptive power management of a computing device is provided such that computer power can be dynamically allocated and adjusted among CPU and other power consuming peripherals based on the power usage pattern of individual users. Power overuse (surge and/or agency) events occurred during a time period (e.g., a week) are recorded in a database. By analyzing the recorded power overuse events, the computing device can be operated under a customized power budget profile learned from the user's power usage pattern, allowing different weight to different power consuming components, so as to optimize the performance of the computing device based on the usage scenario of different users at different time.

Abstract: An antenna module, including a feed point, a ground plane, a main radiator, and a parasitic radiator, is provided. The main radiator includes a first portion, a second portion, and a third portion. The first portion and the second portion extend from the feed point and meet at an intersection after turning. The third portion has a first section and a second section. The first section of the third portion is connected to the intersection, and the second section is connected to the ground plane. The parasitic radiator is connected to the second section and extends towards the first section of the third portion and keeps a coupling gap away from the first section.

Abstract: A layer of material is transformed from a first state to a second state by the application of energy from an energy beam. For example, large direction- and location-controlled p-Si grain growth utilizes recrystallization of amorphous silicon from superpositioned laser irradiation. The superpositioned laser irradiation controls cooling and solidification processes that determine the resulting crystal structure. Specifically, a first laser beam of a first pulse duration is used to melt an amorphous silicon (a-Si) film and to create a temperature gradient. After an initial delay, a second laser beam with shorter pulse duration is superpositioned with the first laser beam. When a-Si is irradiated by the second laser beam, the area heated by the first laser beam becomes completely molten. Spontaneous nucleation is initiated in the supercooled liquid-Si when the liquid-Si temperature drops below the nucleation temperature.

Abstract: A layer of material is transformed from a first state to a second state by the application of energy from an energy beam. For example, large direction- and location-controlled p-Si grain growth utilizes recrystallization of amorphous silicon from superpositioned laser irradiation. The superpositioned laser irradiation controls cooling and solidification processes that determine the resulting crystal structure. Specifically, a first laser beam of a first pulse duration is used to melt an amorphous silicon (a-Si) film and to create a temperature gradient. After an initial delay, a second laser beam with shorter pulse duration is superpositioned with the first laser beam. When a-Si is irradiated by the second laser beam, the area heated by the first laser beam becomes completely molten. Spontaneous nucleation is initiated in the supercooled liquid-Si when the liquid-Si temperature drops below the nucleation temperature.

Abstract: A layer of material is transformed from a first state to a second state by the application of energy from an energy beam. For example, large direction- and location-controlled p-Si grain growth utilizes recrystallization of amorphous silicon from superpositioned laser irradiation. The superpositioned laser irradiation controls cooling and solidification processes that determine the resulting crystal structure. Specifically, a first laser beam of a first pulse duration is used to melt an amorphous silicon (a-Si) film and to create a temperature gradient. After an initial delay, a second laser beam with shorter pulse duration is superpositioned with the first laser beam. When a-Si is irradiated by the second laser beam, the area heated by the first laser beam becomes completely molten. Spontaneous nucleation is initiated in the supercooled liquid-Si when the liquid-Si temperature drops below the nucleation temperature.