Abstract: An insulated gate bipolar transistor includes a P-type group III-V nitride compound layer. An N-type group III-V nitride compound layer contacts a side of the P-type group III-V nitride compound layer. An HEMT is disposed on the N-type group III-V nitride compound layer. The HEMT includes a first group III-V nitride compound layer disposed on the N-type group III-V nitride compound layer. A second group III-V nitride compound layer is disposed on the first group III-V nitride compound layer. A source is embedded within the second group III-V nitride compound layer and the first group III-V nitride compound layer, wherein the source includes an N-type group III-V nitride compound body and a metal contact. A drain contacts another side of the P-type group III-V nitride compound layer. A gate is disposed on the second group III-V nitride compound layer.

Abstract: A complementary high electron mobility transistor includes an N-type HEMT and an P-type HEMT disposed on the substrate. The N-type HEMT includes a first undoped gallium nitride layer, a first quantum confinement channel, a first undoped group III-V nitride compound layer and an N-type group III-V nitride compound layer disposed from bottom to top. A first gate is disposed on the N-type group III-V nitride compound layer. A first source and a first drain are disposed at two sides of the first gate. The P-type HEMT includes a second undoped gallium nitride layer, a second quantum confinement channel, a second undoped group III-V nitride compound layer and a P-type group III-V nitride compound layer disposed from bottom to top. A second gate is disposed on the P-type group III-V nitride compound layer. A second source and a second drain are disposed at two sides of the second gate.

Abstract: A method and an apparatus for semiconductor manufacturing process prediction based on heterogeneous data are provided. The method includes the following steps. Several equipment recipe data of several pieces of equipment are obtained. The equipment recipe data are inputted into a first Neural Network model to obtain a first prediction result. Several equipment sensing data are obtained. The equipment sensing data are inputted into a second Neural Network model to obtain a second prediction result. Several metrology inspection data are obtained. The equipment recipe data, the equipment sensing data and the metrology inspection data are heterogeneous data. The metrology inspection data are inputted into a third Neural Network model to obtain a third prediction result. According to the first prediction result, the second prediction result and the third prediction result, a total prediction result is obtained.

Abstract: A semiconductor process prediction method and a semiconductor process prediction apparatus considering overall features and local features are provided. The semiconductor manufacturing process prediction method includes the following steps. Several equipment sensing curves are obtained. The equipment sensing curves are filtered to reduce the co-linearity of the equipment sensing curves. A Dynamic Time Warping (DTW) procedure is performed to align the equipment sensing curves. The equipment sensing curves which are aligned are inputted into a Convolutional Neural Network (CNN) model to obtain a first prediction result considering the local features. A statistical analysis procedure is performed on the equipment sensing curves to obtain several statistical data. The statistical data are inputted into an Artificial Neural Network (ANN) model to obtain a second prediction result considering the overall features.

Abstract: The present invention provides functional aptamer-comprising tRNA molecules, useful in the study of tRNA and ribosomal activity.

Abstract: Disclosed is a vibration-damping support device, including a housing, and a core shaft having one end passing through the housing to connect with a vibration source. The vibration-damping support device further includes two elastic members arranged within the housing and spaced apart from each other. Each elastic member includes an inner hole, so that it can be mounted on the core shaft. Each elastic member includes an elastic rubber body, and a plurality of metal plates that are embedded in the elastic rubber body and parallel to each other. The elastic rubber body extends beyond the metal plates in a radial direction. With this vibration-damping support device, a variable stiffness can be achieved.

Abstract: A transparent and colorless polyimide resin is provided. The polyimide resin is derived from at least two dianhydride monomers and at least two diamine monomers. At least one monomer in the dianhydride and diamine monomers includes structure of formula (1). The monomer with structure of formula (1) has an amount of moles accounting for 10-50% of total moles of the dianhydride or diamine monomers. In formula (1), X is SO2,C(CH3)2 or C(CF3)2, Y is oxygen.

Abstract: A communication system, method, and components are described. Specifically, a communication system having the ability to enable a media server to provide audio substitution during a dynamic device pairing scenario is disclosed. The media server may be included in the call topology, for instance, by way of a dynamic device pairing server or application that facilitates the dynamic pairing of a media device and a control device for a communication session.

Abstract: Disclosed is a vibration-damping support device, including a housing, and a core shaft having one end passing through the housing to connect with a vibration source. The vibration-damping support device further includes two elastic members arranged within the housing and spaced apart from each other. Each elastic member includes an inner hole, so that it can be mounted on the core shaft. Each elastic member includes an elastic rubber body, and a plurality of metal plates that are embedded in the elastic rubber body and parallel to each other. The elastic rubber body extends beyond the metal plates in a radial direction. With this vibration-damping support device, a variable stiffness can be achieved.

Abstract: The present invention provides functional aptamer-comprising tRNA molecules, useful in the study of tRNA and ribosomal activity.

Abstract: A transparent and colorless polyimide resin is provided. The polyimide resin is derived from at least two dianhydride monomers and at least two diamine monomers. At least one monomer in the dianhydride and diamine monomers includes structure of formula (1). The monomer with structure of formula (1) has an amount of moles accounting for 10-50% of total moles of the dianhydride or diamine monomers. In formula (1), X is SO2, C(CH3)2 or C(CF3)2, Y is oxygen.

Abstract: For improving wafer fabrication, yield and lifetime of wafers are predicted by determining coefficients of a yield domain for wafer yield prediction and a lifetime domain for a wafer lifetime prediction, an integral domain, an electric/layout domain, a metrology/defect domain, and a machine sensor domain in a hierarchical manner. With the aid of the hierarchically-determined coefficients, noises in prediction can be reduced so that precision of prediction results of the yields or the lifetimes of wafers can be raised.

Abstract: A method and device for forming a cigarette filter rod. The method is as follows: in a process of continuously conveying forward cigarette filter materials that tend to converge to have a rod shape, multiple granular additives are continuously output in accordance with a certain time interval, and are sprayed into the cigarette filter materials that converge forwards under the action of continuous transporting flows, so that after the cigarette filter materials converge to form a continuous filter rod, multiple groups of additive unit combinations formed of different granular additive units are embedded in an axial direction of the filter rod.

Abstract: Telephonic and other endpoints often make presence information of other users available on the endpoint. Systems whereby every user sends a notification to every other user quickly becomes resource intensive. Providing presence information only to users subscribed to the presence of other users helps; but, maintaining such subscriptions is often overlooked. Providing automatic subscriptions based upon a triggering event allows presence information to be provided to associated users. The presence information may be time limited to allow for an appropriate amount of presence information to be provided for a duration most likely determined to be relevant. Upon expiration of the subscription, the utilized resources are released without requiring any human intervention.

Abstract: A semiconductor device including a substrate, a plurality of isolation structures, at least a gate structure, a plurality of dummy gate structures and a plurality of epitaxial structures is provided. The substrate has an active area defined by the isolation structures disposed within the substrate. That is, the active area is defined between the isolation structures. The gate structure is disposed on the substrate and located within the active area. The dummy gate structures are disposed on the substrate and located out of the active area. The edge of each dummy gate structure is separated from the boundary of the active area with a distance smaller than 135 angstroms. The epitaxial structures are disposed within the active area and in a portion of the substrate on two sides of the gate structure. The invention also provided a method for fabricating semiconductor device.

Abstract: A stacked semiconductor structure and a manufacturing method for the same are provided. The stacked semiconductor structure is provided, which comprises a first semiconductor substrate, a second semiconductor substrate, a dielectric layer, a trench, a via, and a conductive structure. The first semiconductor substrate comprises a first substrate portion and a first conductive layer on an active surface of the first substrate portion. The second semiconductor substrate comprises a second substrate portion and a second conductive layer on an active surface of the second substrate portion. The trench passes through the second substrate portion and exposing the second conductive layer. The via passes through the dielectric layer and exposes the first conductive layer. The conductive structure has an upper portion filling the trench and a lower portion filling the via. Opposing side surfaces of the upper portion are beyond opposing side surfaces of the lower portion.

Abstract: A semiconductor device including a substrate, a plurality of isolation structures, at least a gate structure, a plurality of dummy gate structures and a plurality of epitaxial structures is provided. The substrate has an active area defined by the isolation structures disposed within the substrate. That is, the active area is defined between the isolation structures. The gate structure is disposed on the substrate and located within the active area. The dummy gate structures are disposed on the substrate and located out of the active area. The edge of each dummy gate structure is separated from the boundary of the active area with a distance smaller than 135 angstroms. The epitaxial structures are disposed within the active area and in a portion of the substrate on two sides of the gate structure. The invention also provided a method for fabricating semiconductor device.

Abstract: A semiconductor device including a substrate, a plurality of isolation structures, at least a gate structure, a plurality of dummy gate structures and a plurality of epitaxial structures is provided. The substrate has an active area defined by the isolation structures disposed within the substrate. That is, the active area is defined between the isolation structures. The gate structure is disposed on the substrate and located within the active area. The dummy gate structures are disposed on the substrate and located out of the active area. The edge of each dummy gate structure is separated from the boundary of the active area with a distance smaller than 135 angstroms. The epitaxial structures are disposed within the active area and in a portion of the substrate on two sides of the gate structure. The invention also provided a method for fabricating semiconductor device.

Abstract: For improving wafer fabrication, yield and lifetime of wafers are predicted by determining coefficients of a yield domain for wafer yield prediction and a lifetime domain for a wafer lifetime prediction, an integral domain, an electric/layout domain, a metrology/defect domain, and a machine sensor domain in a hierarchical manner. With the aid of the hierarchically-determined coefficients, noises in prediction can be reduced so that precision of prediction results of the yields or the lifetimes of wafers can be raised.

Abstract: A multi-gate transistor device includes a substrate, a fin structure extending along a first direction formed on the substrate, a gate structure extending along a second direction formed on the substrate, a drain region having a first conductivity type formed in the fin structure, a source region having a second conductivity type formed in the fin structure, and a first pocket doped region having the first conductivity type formed in and encompassed by the source region. The first conductivity type and the second conductivity type are complementary to each other.