Abstract: A wideband device modeling method comprises using ultra-short time-domain impulse responses measurement and using a subsequent extraction of said ultra-short time-domain impulse responses measurement. The wideband device modeling method in the invention is to provide a model that could faithfully describe an ultra-short TD response and would conform to the wideband consideration. An ultra-short impulse with tens of pico-second width has been used in this work for characterizing the TD responses of the devices. Moreover, the wideband device modeling method in the invention is to provide a layer peeling technique, widely used in characterizing PCB interconnection or package, is mixed with a conventional spiral inductor physical model. The wideband device modeling method in the invention also provides an extension equivalent circuit combined with the BSIM3v3 model.

Abstract: The method for wideband device measurement and modeling includes: measurement of an electronic device to obtain a set of time domain raw data representing characteristics of said device; conversion of said time domain raw data into frequency domain raw data; calibration and correction of embedded errors according to said frequency domain raw data to obtain clean frequency domain data representing characteristics of said device; conversion of said frequency domain data into time domain clean data; and establishment of equivalent model of said device according to said time domain data. The time domain raw data are obtained by applying to said device an ultra short impulse and measuring said impulse and its response from said device. Conversion between said time domain data and said frequency domain data may be Fourier transform.

Abstract: The method for wideband device measurement and modeling comprises: measurement of an electronic device to obtain a set of time domain raw data representing characteristics of said device; conversion of said time domain raw data into frequency domain raw data; calibration and correction of embedded errors according to said frequency domain raw data to obtain clean frequency domain data representing characteristics of said device; conversion of said frequency domain data into time domain clean data; and establishment of equivalent model of said device according to said time domain data. The time domain raw data are obtained by applying to said device an ultra short impulse and measuring said impulse and its response from said device. Conversion between said time domain data and said frequency domain data may be Fourier transform. This invention also discloses system for wideband device measurement and modeling using the above method.

Abstract: A wideband device modeling method comprises using ultra-short time-domain impulse responses measurement and using a subsequent extraction of said ultra-short time-domain impulse responses measurement. The wideband device modeling method in the invention is to provide a model that could faithfully describe an ultra-short TD response and would conform to the wideband consideration. An ultra-short impulse with tens of pico-second width has been used in this work for characterizing the TD responses of the devices. Moreover, the wideband device modeling method in the invention is to provide a layer peeling technique, widely used in characterizing PCB interconnection or package, is mixed with a conventional spiral inductor physical model. The wideband device modeling method in the invention also provides an extension equivalent circuit combined with the BSIM3v3 model.

Abstract: A dual supply voltages converter divides a supply voltage by a constant to produce a feature voltage larger than one when the supply voltage is a first voltage and smaller than 1 when the supply voltage is a second voltage and squares the feature voltage for comparing with itself. After squared, a value larger than one will larger than itself and a value small than 1 will smaller than itself. As a result, the supply voltage is determined to be the first or second voltage and thereby to be converted to the desired output voltage.

Abstract: A switching mode N-order circuit comprises a first unit, a second unit and a comparator. The first unit includes an operational amplifier integral circuit to integrate a first voltage. The second unit has one or more stages of subunits in cascade each including an operational amplifier integral circuit to integrate a second voltage stage by stage. Each of the operational amplifier integral circuits is equipped with a switch to be controlled by the comparator to be discharged. The output of the N-order circuit is derived from the output of the second unit.

Abstract: A switching mode N-order circuit comprises a first unit, a second unit and a comparator. The first unit includes an operational amplifier integral circuit to integrate a first voltage. The second unit has one or more stages of subunits in cascade each including an operational amplifier integral circuit to integrate a second voltage stage by stage. Each of the operational amplifier integral circuits is equipped with a switch to be controlled by the comparator to be discharged. The output of the N-order circuit is derived from the output of the second unit.

Abstract: A dual supply voltages converter divides a supply voltage by a constant to produce a feature voltage larger than one when the supply voltage is a first voltage and smaller than 1 when the supply voltage is a second voltage and squares the feature voltage for comparing with itself. After squared, a value larger than one will larger than itself and a value small than 1 will smaller than itself. As a result, the supply voltage is determined to be the first or second voltage and thereby to be converted to the desired output voltage.