Abstract: In an embodiment, a structure includes: a first integrated circuit die including first die connectors; a first dielectric layer on the first die connectors; first conductive vias extending through the first dielectric layer, the first conductive vias connected to a first subset of the first die connectors; a second integrated circuit die bonded to a second subset of the first die connectors with first reflowable connectors; a first encapsulant surrounding the second integrated circuit die and the first conductive vias, the first encapsulant and the first integrated circuit die being laterally coterminous; second conductive vias adjacent the first integrated circuit die; a second encapsulant surrounding the second conductive vias, the first encapsulant, and the first integrated circuit die; and a first redistribution structure including first redistribution lines, the first redistribution lines connected to the first conductive vias and the second conductive vias.

Abstract: Some embodiments of the present disclosure relate to an integrated chip including an extended via that spans a combined height of a wire and a via and that has a smaller footprint than the wire. The extended via may replace a wire and an adjoining via at locations where the sizing and the spacing of the wire are reaching lower limits. Because the extended via has a smaller footprint than the wire, replacing the wire and the adjoining via with the extended via relaxes spacing and allows the size of the pixel to be further reduced. The extended via finds application for capacitor arrays used for pixel circuits.

Abstract: A semiconductor package including a first semiconductor die, a second semiconductor die, a first insulating encapsulation, a dielectric layer structure, a conductor structure and a second insulating encapsulation is provided. The first semiconductor die includes a first semiconductor substrate and a through silicon via (TSV) extending from a first side to a second side of the semiconductor substrate. The second semiconductor die is disposed on the first side of the semiconductor substrate. The first insulating encapsulation on the second semiconductor die encapsulates the first semiconductor die. A terminal of the TSV is coplanar with a surface of the first insulating encapsulation. The dielectric layer structure covers the first semiconductor die and the first insulating encapsulation. The conductor structure extends through the dielectric layer structure and contacts with the through silicon via.

Abstract: A package structure and the manufacturing method thereof are provided. The package structure includes a first package including at least one first semiconductor die encapsulated in an insulating encapsulation and through insulator vias electrically connected to the at least one first semiconductor die, a second package including at least one second semiconductor die and conductive pads electrically connected to the at least one second semiconductor die, and solder joints located between the first package and the second package. The through insulator vias are encapsulated in the insulating encapsulation. The first package and the second package are electrically connected through the solder joints. A maximum size of the solder joints is greater than a maximum size of the through insulator vias measuring along a horizontal direction, and is greater than or substantially equal to a maximum size of the conductive pads measuring along the horizontal direction.

Abstract: A test system includes a plurality of test core devices and a plurality of first buses. The plurality of test core devices are electrically connected to a device under test (DUT). The plurality of first buses are electrically connected to the test core devices, where at least one set of test core devices selected from the plurality of test core devices are merged to be a merged test core device through one or more of the plurality of first buses.

Abstract: A test system includes a plurality of test core devices and a plurality of first buses. The plurality of test core devices are electrically connected to a device under test (DUT). The plurality of first buses are electrically connected to the test core devices, where at least one set of test core devices selected from the plurality of test core devices are merged to be a merged test core device through one or more of the plurality of first buses.

Abstract: A tool box has a box body and a handle. The box body has a mounting portion mounted at the box body. The mounting portion has an upper positioning recess and a lower positioning recess. The handle has a holding portion, a connecting portion, and a marking portion. The holding portion is an elongated board and is engaged with the lower positioning recess, a cross section of the holding portion being U-shaped with an opening facing upward. The connecting portion is formed at an inner end of the holding portion and is an upright board. The marking portion is formed at a top portion of the connecting portion and is an elongated board and is engaged with the upper positioning recess, a cross section of the marking portion being U-shaped with an opening facing downward.

Abstract: A positioning pad has a pad body and a coat layer. The pad body is made of a foaming material, is formed as a board, and has at least one tool recess defined in a top of the pad body. The coat layer is attached to the top of the pad body and has at least one window and a 3D (three dimensional) embossing pattern. The at least one window is defined through the coat layer and corresponds respectively to the at least one tool recess in the pad body in position and shape. The 3D embossing pattern is formed on a top of the coat layer and has multiple embossing units. Each embossing unit has an outer frame and a decorating surface enclosed by the outer frame.

Abstract: A stackable toolbox has a body and an engaging block rotatably mounted on the body. The body has corresponding engaging grooves of two first recesses and engaging ribs of two first protrusions in positions away from the engaging block. When two toolboxes are stacked up with each other, the engaging ribs of the first protrusions of one of the toolboxes are mounted in and engaged with the engaging grooves of the first recesses of the other toolbox, and the engaging block is turned to engage with the engaging bumps of the toolboxes. Multiple stackable toolboxes may be stacked and be lifted together.

Abstract: An electrical connection defect simulation test method is provided. The electrical connection state simulation test method includes the steps as follows. A device under test is provided, wherein the device under test includes a plurality of pin groups each having a plurality of signal pins. A zero-frequency signal is transmitted from a signal-feeding device to each of the signal pins to simulate an open condition. An open test is performed on each of the signal pins. The signal pins of the device under test are connected to a relay matrix. The relay matrix is controlled to make any two of the signal pins in one of the pin groups electrically connected to simulate a short condition. A short test is performed on any two of the electrically connected signal pins. An electrical connection state simulation test system is disclosed herein as well.

Abstract: An electrical connection defect simulation test method is provided. The electrical connection state simulation test method includes the steps as follows. A device under test is provided, wherein the device under test includes a plurality of pin groups each having a plurality of signal pins. A zero-frequency signal is transmitted from a signal-feeding device to each of the signal pins to simulate an open condition. An open test is performed on each of the signal pins. The signal pins of the device under test are connected to a relay matrix. The relay matrix is controlled to make any two of the signal pins in one of the pin groups electrically connected to simulate a short condition. A short test is performed on any two of the electrically connected signal pins. An electrical connection state simulation test system is disclosed herein as well.