Patents by Inventor Ming-Hsien Yang

Ming-Hsien Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11120749
    Abstract: A display device includes a driving circuit and a control circuit. The driving circuit is configured to receive a data voltage in response to a scanning signal, and to control the brightness of a light emitting element according to the data voltage. The control circuit is configured to provide a stop signal to the driving circuit in response to a digital signal and the scanning signal, so as to stop the light emitting element from emitting light, and in turn control the light emission period of the light emitting element.
    Type: Grant
    Filed: December 10, 2019
    Date of Patent: September 14, 2021
    Assignee: AU OPTRONICS CORPORATION
    Inventors: Chun-Feng Lin, Kai-Wei Hong, Chuang-Cheng Yang, Yi-Cheng Lin, Ming-Hsien Lee
  • Publication number: 20210164543
    Abstract: A transmission mechanism includes first and second transmission, first and second shafts, a clutch, and a one-way bearing. In the first gear, power is output through the first driving transmission and the one-way bearing; and in the second gear, the power is output through the clutch, the second driving transmission and the one-way bearing.
    Type: Application
    Filed: February 10, 2021
    Publication date: June 3, 2021
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Cheng-Ping YANG, Meng-Ru WU, Ming-Hsien YANG, Peng-Yu CHEN, Jui-Tang TSENG
  • Patent number: 10948049
    Abstract: A transmission mechanism includes first and second transmission, first and second shafts, a clutch, and a one-way bearing. In the first gear, power is output through the first driving transmission and the one-way bearing; and in the second gear, the power is output through the clutch, the second driving transmission and the one-way bearing.
    Type: Grant
    Filed: July 26, 2017
    Date of Patent: March 16, 2021
    Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Cheng-Ping Yang, Meng-Ru Wu, Ming-Hsien Yang, Peng-Yu Chen, Jui-Tang Tseng
  • Patent number: 10604009
    Abstract: A dual-shaft gearbox mechanism includes a hollow shaft motor, first and second gear sets, first and second shafts, a clutch and a unidirectional assembly. When the dual-shaft gearbox mechanism is in a first gear, power is outputted via the first gear set and the unidirectional assembly. When the dual-shaft gearbox mechanism is in a second gear, power is outputted via the clutch and the second gear set.
    Type: Grant
    Filed: July 31, 2018
    Date of Patent: March 31, 2020
    Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Cheng-Ping Yang, Ming-Hsien Yang, Chia Tsao, Li-Te Huang, Peng-Yu Chen
  • Publication number: 20200072351
    Abstract: A parking mechanism used in gearbox, including a ratchet pawl and a cam set for driving the ratchet pawl. The cam set includes a shaft, a first and a second cam pivotally engaged with the shaft, wherein the shaft drives the first cam and the second cam to rotate, so as to drive the ratchet pawl to engage with a gear wheel that is pivotally engaged with a shaft member and to stop the shaft member. The cam set as a driving means simplifies the parking mechanism and is easy to be manufactured and disassembled.
    Type: Application
    Filed: November 20, 2018
    Publication date: March 5, 2020
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Po-Wen CHEN, Li-Te HUANG, Chia TSAO, Meng-Ru WU, Ming-Hsien YANG, Cheng-Ping YANG, Jui-Tang TSENG
  • Publication number: 20200058684
    Abstract: Various embodiments of the present application are directed towards image sensors including composite backside illuminated (CBSI) structures to enhance performance. In some embodiments, a first trench isolation structure extends into a backside of a substrate to a first depth and comprises a pair of first trench isolation segments. A photodetector is in the substrate, between and bordering the first trench isolation segments. A second trench isolation structure is between the first trench isolation segments and extends into the backside of the substrate to a second depth less than the first depth. The second trench isolation structure comprises a pair of second trench isolation segments. An absorption enhancement structure overlies the photodetector, between the second trench isolation segments, and is recessed into the backside of the semiconductor substrate. The absorption enhancement structure and the second trench isolation structure collectively define a CBSI structure.
    Type: Application
    Filed: July 25, 2019
    Publication date: February 20, 2020
    Inventors: Wei Chuang Wu, Dun-Nian Yaung, Feng-Chi Hung, Jen-Cheng Liu, Jhy-Jyi Sze, Keng-Yu Chou, Yen-Ting Chiang, Ming-Hsien Yang, Chun-Yuan Chen
  • Publication number: 20200013736
    Abstract: A semiconductor device structure is provided, in some embodiments. The semiconductor device structure includes a semiconductor substrate having a first surface, a second surface, and sidewalls defining a recess that passes through the semiconductor substrate. The semiconductor device structure further includes an interconnect structure having one or more interconnect layers within a first dielectric structure that is disposed along the second surface. A conductive bonding structure is disposed within the recess and includes nickel. The conductive bonding structure has opposing outermost sidewalls that contact sidewalls of the interconnect structure.
    Type: Application
    Filed: September 18, 2019
    Publication date: January 9, 2020
    Inventors: Ming-Hsien Yang, Ching-Chun Wang, Dun-Nian Yaung, Feng-Chi Hung, Sin-Yao Huang
  • Publication number: 20190351762
    Abstract: A dual-shaft gearbox mechanism includes a hollow shaft motor, first and second gear sets, first and second shafts, a clutch and a unidirectional assembly. When the dual-shaft gearbox mechanism is in a first gear, power is outputted via the first gear set and the unidirectional assembly. When the dual-shaft gearbox mechanism is in a second gear, power is outputted via the clutch and the second gear set.
    Type: Application
    Filed: July 31, 2018
    Publication date: November 21, 2019
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Cheng-Ping YANG, Ming-Hsien YANG, Chia TSAO, Li-Te HUANG, Peng-Yu CHEN
  • Patent number: 10475758
    Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate having a first surface, a second surface opposing the first surface, and sidewalls defining a recess that passes through the semiconductor substrate. A first interconnect layer is within a first dielectric structure disposed along the second surface, and a bonding pad is in the recess and extends to the first interconnect layer. A dielectric filling layer is also within the recess. The dielectric filling layer has an opening over a portion of the bonding pad and a curved upper surface over the bonding pad. A nickel layer is over the bonding pad and in the opening.
    Type: Grant
    Filed: January 26, 2018
    Date of Patent: November 12, 2019
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Ming-Hsien Yang, Ching-Chun Wang, Dun-Nian Yaung, Feng-Chi Hung, Sin-Yao Huang
  • Publication number: 20180335110
    Abstract: A transmission mechanism includes first and second transmission, first and second shafts, a clutch, and a one-way bearing. In the first gear, power is output through the first driving transmission and the one-way bearing; and in the second gear, the power is output through the clutch, the second driving transmission and the one-way bearing.
    Type: Application
    Filed: July 26, 2017
    Publication date: November 22, 2018
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Cheng-Ping YANG, Meng-Ru WU, Ming-Hsien YANG, Peng-Yu CHEN, Jui-Tang TSENG
  • Patent number: 10054224
    Abstract: A parking brake includes transmission shaft, park gear and parking assembly. The park gear is connected to the transmission shaft. The parking assembly includes holder and engagement mechanisms. The holder on the transmission shaft is slidable in axial direction of the transmission shaft. The engagement mechanism includes engagement body and elastic member. The engagement body is furnished on the holder and slidable in a radial direction of the transmission shaft. The elastic members are connected to the holder and located between the holder and the engagement bodies. The engagement bodies protrude from a surface of the holder. When the parking assembly is moved toward the park gear, and some of the engagement bodies are pressed and moved with respect to the holder, the park gear is engaged with some of the plurality of engagement mechanisms not moved with respect to the holder.
    Type: Grant
    Filed: December 19, 2016
    Date of Patent: August 21, 2018
    Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Ming-Hsien Yang, Meng-Ru Wu, Jui-Tang Tseng
  • Patent number: 10014340
    Abstract: The present disclosure relates to a stacked SPAD image sensor with a CMOS Chip and an imaging chip bonded together, to improve the fill factor of the SPAD image sensor, and an associated method of formation. In some embodiments, the imaging chip has a plurality of SPAD cells disposed within a second substrate. The CMOS Chip has a first interconnect structure disposed over a first substrate. The imaging chip has a second interconnect structure disposed between the second substrate and the first interconnect structure. The CMOS Chip and the imaging chip are bonded together through along an interface disposed between the first interconnect structure and the second interconnect structure.
    Type: Grant
    Filed: December 28, 2015
    Date of Patent: July 3, 2018
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Ming-Hsien Yang, Ching-Chun Wang, Dun-Nian Yaung, Feng-Chi Hung, Shyh-Fann Ting, Chun-Yuan Chen
  • Publication number: 20180151522
    Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate having a first surface, a second surface opposing the first surface, and sidewalls defining a recess that passes through the semiconductor substrate. A first interconnect layer is within a first dielectric structure disposed along the second surface, and a bonding pad is in the recess and extends to the first interconnect layer. A dielectric filling layer is also within the recess. The dielectric filling layer has an opening over a portion of the bonding pad and a curved upper surface over the bonding pad. A nickel layer is over the bonding pad and in the opening.
    Type: Application
    Filed: January 26, 2018
    Publication date: May 31, 2018
    Inventors: Ming-Hsien Yang, Ching-Chun Wang, Dun-Nian Yaung, Feng-Chi Hung, Sin-Yao Huang
  • Publication number: 20180105149
    Abstract: A parking brake includes transmission shaft, park gear and parking assembly. The park gear is connected to the transmission shaft. The parking assembly includes holder and engagement mechanisms. The holder on the transmission shaft is slidable in axial direction of the transmission shaft. The engagement mechanism includes engagement body and elastic member. The engagement body is furnished on the holder and slidable in a radial direction of the transmission shaft. The elastic members are connected to the holder and located between the holder and the engagement bodies. The engagement bodies protrude from a surface of the holder. When the parking assembly is moved toward the park gear, and some of the engagement bodies are pressed and moved with respect to the holder, the park gear is engaged with some of the plurality of engagement mechanisms not moved with respect to the holder.
    Type: Application
    Filed: December 19, 2016
    Publication date: April 19, 2018
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Ming-Hsien YANG, Meng-Ru WU, Jui-Tang TSENG
  • Patent number: 9881884
    Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a first semiconductor substrate having a first surface, a second surface, and a recess. The second surface is opposite to the first surface. The recess passes through the first semiconductor substrate. The semiconductor device structure includes a first wiring layer over the second surface. The semiconductor device structure includes a first bonding pad in the recess and extending to the first wiring layer so as to be electrically connected to the first wiring layer. The semiconductor device structure includes a nickel layer over the first bonding pad. The semiconductor device structure includes a gold layer over the nickel layer.
    Type: Grant
    Filed: November 5, 2015
    Date of Patent: January 30, 2018
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Ming-Hsien Yang, Ching-Chun Wang, Dun-Nian Yaung, Feng-Chi Hung, Sin-Yao Huang
  • Publication number: 20170186798
    Abstract: The present disclosure relates to a stacked SPAD image sensor with a CMOS Chip and an imaging chip bonded together, to improve the fill factor of the SPAD image sensor, and an associated method of formation. In some embodiments, the imaging chip has a plurality of SPAD cells disposed within a second substrate. The CMOS Chip has a first interconnect structure disposed over a first substrate. The imaging chip has a second interconnect structure disposed between the second substrate and the first interconnect structure. The CMOS Chip and the imaging chip are bonded together through along an interface disposed between the first interconnect structure and the second interconnect structure.
    Type: Application
    Filed: December 28, 2015
    Publication date: June 29, 2017
    Inventors: Ming-Hsien Yang, Ching-Chun Wang, Dun-Nian Yaung, Feng-Chi Hung, Shyh-Fann Ting, Chun-Yuan Chen
  • Publication number: 20170047301
    Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a first semiconductor substrate having a first surface, a second surface, and a recess. The second surface is opposite to the first surface. The recess passes through the first semiconductor substrate. The semiconductor device structure includes a first wiring layer over the second surface. The semiconductor device structure includes a first bonding pad in the recess and extending to the first wiring layer so as to be electrically connected to the first wiring layer. The semiconductor device structure includes a nickel layer over the first bonding pad. The semiconductor device structure includes a gold layer over the nickel layer.
    Type: Application
    Filed: November 5, 2015
    Publication date: February 16, 2017
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Ming-Hsien YANG, Ching-Chun WANG, Dun-Nian YAUNG, Feng-Chi HUNG, Sin-Yao HUANG
  • Patent number: 7156948
    Abstract: A wet etching apparatus is disclosed. The apparatus comprises a first tank, containing a first wet etching solution; a filter, having a filter cartridge, connected to the first tank to filter out the impurities in the first solution; a second etching tank, connected to the filter and the first tank in parallel, containing a second solution; a reaction tank, connected to the filter, wherein having a wet etching reaction; an exhaust component, connected to the filter and the reaction tank in parallel; a first pump, delivering the first solution to the reaction tank through the filter; and a second pump, delivering the second solution to the exhaust component to exhaust the solution from the etching tank through the filter.
    Type: Grant
    Filed: December 17, 2003
    Date of Patent: January 2, 2007
    Assignee: TPO Displays Corp.
    Inventors: Chi-An Lin, Kuo-Hung Kuo, Ta-Hsin Kuan, Po-Yi Lo, Ming-Hsien Yang
  • Publication number: 20040238120
    Abstract: A wet etching apparatus is disclosed. The apparatus comprises a first tank, containing a first wet etching solution; a filter, having a filter cartridge, connected to the first tank to filter out the impurities in the first solution; a second etching tank, connected to the filter and the first tank in parallel, containing a second solution; a reaction tank, connected to the filter, wherein having a wet etching reaction; an exhaust component, connected to the filter and the reaction tank in parallel; a first pump, delivering the first solution to the reaction tank through the filter; and a second pump, delivering the second solution to the exhaust component to exhaust the solution from the etching tank through the filter.
    Type: Application
    Filed: December 17, 2003
    Publication date: December 2, 2004
    Inventors: Chi-An Lin, Kuo-Hung Kuo, Ta-Hsin Kuan, Po-Yi Lo, Ming-Hsien Yang