Abstract: A semiconductor device and method for forming the semiconductor device are provided. In some embodiments, a semiconductor substrate comprises a device region. An isolation structure extends laterally in a closed path to demarcate the device region. A first source/drain region and a second source/drain region are in the device region and laterally spaced. A sidewall of the first source/drain region directly contacts the isolation structure at a first isolation structure sidewall, and remaining sidewalls of the first source/drain region are spaced from the isolation structure. A selectively-conductive channel is in the device region, and extends laterally from the first source/drain region to the second source/drain region. A plate comprises a central portion and a first peripheral portion. The central portion overlies the selectively-conductive channel, and the first peripheral portion protrudes from the central portion towards the first isolation structure sidewall.

Abstract: The present disclosure provides a thin film including a first thermoplastic polyolefin (TPO) elastomer which is anhydride-grafted. The present disclosure further provides a method for manufacturing the thin film, a laminated material and a method for adhesion.

Abstract: A Ge epitaxial layer is grown on a silicon substrate with a patterned structure. Through a cyclic annealing, dislocation defects are confined. The present invention provides a method for manufacturing a high-quality Ge epitaxial layer with a low cost and a simple procedure. The Ge epitaxial layer obtained can be applied to high mobility Ge devices or any lattice-mismatched epitaxy on a photonics device.

Abstract: A Ge epitaxial layer is grown on a silicon substrate with a patterned structure. Through a cyclic annealing, dislocation defects are confined. The present invention provides a method for manufacturing a high-quality Ge epitaxial layer with a low cost and a simple procedure. The Ge epitaxial layer obtained can be applied to high mobility Ge devices or any lattice-mismatched epitaxy on a photonics device.

Abstract: Manufacturing methods for nano scale Ge include: Form dielectric layer on the substrate surface, then etch the dielectric layer to form openings of three different dimensions, then use chemical vapor deposition process to deposit Ge metal layer to cover the substrate, dielectric layer and the openings; then on the opening of three different dimensions, nano-dot, nano-disk and nano-ring are formed.

Abstract: A lock has a housing with a hole. A lock post has an interior end fixed in the housing and an exterior end extruded out of the housing via the hole. The lock post has a lock portion at the exterior end thereof. Two close posts have interior ends received in the housing and a plate is connected to the interior ends. The close posts are movable relative to the lock post. A control device is provided to the housing for manipulation to move the close posts. An elastic device is provided in the housing with opposite ends against the housing and the plate. A lock mechanism is provided to the housing to be switched between an unlock condition, in which the close posts are free for movement, and a lock condition, in which the close posts are exterior ends thereof extruded out of the housing and are secured threat.

Abstract: A lock has a housing with a hole. A lock post has an interior end fixed in the housing and an exterior end extruded out of the housing via the hole. The lock post has a lock portion at the exterior end thereof. Two close posts have interior ends received in the housing and a plate is connected to the interior ends. The close posts are movable relative to the lock post. A control device is provided to the housing for manipulation to move the close posts. An elastic device is provided in the housing with opposite ends against the housing and the plate. A lock mechanism is provided to the housing to be switched between an unlock condition, in which the close posts are free for movement, and a lock condition, in which the close posts are exterior ends thereof extruded out of the housing and are secured thereat.