Abstract: In a semiconductor structure, a first conductive feature is formed in a trench by PVD and a glue layer is then deposited on the first conductive feature in the trench before CVD deposition of a second conductive feature there-over. The first conductive feature acts as a protection layer to keep silicide from being damaged by later deposition of metal or a precursor by CVD. The glue layer extends along the extent of the sidewall to enhance the adhesion of the second conductive features to the surrounding dielectric layer.

Abstract: A method of forming a semiconductor device includes: forming a via in a first dielectric layer disposed over a substrate; forming a second dielectric layer over the first dielectric layer; forming an opening in the second dielectric layer, where the opening exposes an upper surface of the via; selectively forming a capping layer over the upper surface of the via, where the capping layer has a curved upper surface that extends above a first upper surface of the first dielectric layer distal from the substrate; after forming the capping layer, forming a barrier layer in the opening over the capping layer and along sidewalls of the second dielectric layer exposed by the opening; and filling the opening by forming an electrically conductive material over the barrier layer.

Abstract: A method of fabricating a contact structure includes the following steps. An opening is formed in a dielectric layer. A conductive material layer is formed within the opening and on the dielectric layer, wherein the conductive material layer includes a bottom section having a first thickness and a top section having a second thickness, the second thickness is greater than the first thickness. A first treatment is performed on the conductive material layer to form a first oxide layer on the bottom section and on the top section of the conductive material layer. A second treatment is performed to remove at least portions of the first oxide layer and at least portions of the conductive material layer, wherein after performing the second treatment, the bottom section and the top section of the conductive material layer have substantially equal thickness.

Abstract: A semiconductor structure includes a source/drain feature in the semiconductor layer. The semiconductor structure includes a dielectric layer over the source/drain feature. The semiconductor structure includes a silicide layer over the source/drain feature. The semiconductor structure includes a barrier layer over the silicide layer. The semiconductor structure includes a seed layer over the barrier layer. The semiconductor structure includes a metal layer between a sidewall of the seed layer and a sidewall of the dielectric layer, a sidewall of each of the silicide layer, the barrier layer, and the metal layer directly contacting the sidewall of the dielectric layer. The semiconductor structure includes a source/drain contact over the seed layer.

Abstract: An adjustable notebook computer support includes a carrier member holding a notebook computer, a base member having a sliding slot, a first link that has one end pivoted to one end of the carrier member and the other end pivoted to one end of the base member, a second link that has one end pivoted to the other end of the carrier member and the other end coupled to and movable along the sliding slot of the base member, a braking unit movable between an unlocking position for allowing adjustment of the elevation and angle of the first and second links relative to the carrier member and a locking position where the first and second links are locked to the carrier member.

Abstract: An adjustable notebook computer support includes a carrier member holding a notebook computer, a base member having a sliding slot, a first link that has one end pivoted to one end of the carrier member and the other end pivoted to one end of the base member, a second link that has one end pivoted to the other end of the carrier member and the other end coupled to and movable along the sliding slot of the base member, a braking unit movable between an unlocking position for allowing adjustment of the elevation and angle of the first and second links relative to the carrier member and a locking position where the first and second links are locked to the carrier base.

Abstract: A paper clip having a rectangular flat base frame defining a rectangular opening, a flat upright perpendicularly upwardly extending from one inner short side of the base frame, a flat clamping arm obliquely downwardly extending from the top of the flat upright toward the opposite inner short side of the base frame for holding down paper sheet members or the like on the base frame, and a flat endpiece obliquely extending from the free end of the flat clamping arm in a direction away from the base frame.

Abstract: A travel bag is disclosed having a wheeled foldaway support pivoted to the back side of the wheeled bag thereof and coupled to the bottom end of the retractable handle thereof through links such that when the retractable handle is pulled out of the wheeled bag, the wheeled foldaway support is turned outwards from the back side of the wheeled bag for supporting the wheeled bag on the floor in a tilted position.

Abstract: A luggage cart is disclosed, which comprises a supplementary support device equipped with a roller and pivoted to the back side of the cart body of the luggage cart and turnable relative to the cart body between a first position where the supplementary support device is closely attached to the back side of the cart body, and a second position where the supplementary support device works with the wheels at the back side of the cart body to support the luggage cart stably on the floor in a tilted position.