Abstract: Semiconductor devices and methods of manufacturing are provided. In some embodiments the method includes depositing an etch stop layer over a first hard mask material, the first hard mask material over a gate stack, depositing an interlayer dielectric over the etch stop layer, forming a first opening through the interlayer dielectric, the etch stop layer, and the first hard mask material, the first opening exposing a conductive portion of the gate stack, and treating sidewalls of the first opening with a first dopant to form a first treated region within the interlayer dielectric, a second treated region within the etch stop layer, a third treated region within the first hard mask material, and a fourth treated region within the conductive portion, wherein after the treating the fourth treated region has a higher concentration of the first dopant than the first treated region.

Abstract: A method includes forming a dielectric layer over an epitaxial source/drain region. An opening is formed in the dielectric layer. The opening exposes a portion of the epitaxial source/drain region. A barrier layer is formed on a sidewall and a bottom of the opening. An oxidation process is performing on the sidewall and the bottom of the opening. The oxidation process transforms a portion of the barrier layer into an oxidized barrier layer and transforms a portion of the dielectric layer adjacent to the oxidized barrier layer into a liner layer. The oxidized barrier layer is removed. The opening is filled with a conductive material in a bottom-up manner. The conductive material is in physical contact with the liner layer.

Abstract: A barrier layer is formed in a portion of a thickness of sidewalls in a recess prior to formation of an interconnect structure in the recess. The barrier layer is formed in the portion of the thickness of the sidewalls by a plasma-based deposition operation, in which a precursor reacts with a silicon-rich surface to form the barrier layer. The barrier layer is formed in the portion of the thickness of the sidewalls in that the precursor consumes a portion of the silicon-rich surface of the sidewalls as a result of the plasma treatment. This enables the barrier layer to be formed in a manner in which the cross-sectional width reduction in the recess from the barrier layer is minimized while enabling the barrier layer to be used to promote adhesion in the recess.

Abstract: An infrared thermopile sensor includes a silicon cover having an infrared lens, an infrared sensing chip having duo-thermopile sensing elements, and a microcontroller chip calculating a temperature of an object. The components are in a stacked 3D package to decrease the size of the infrared thermopile sensor. The infrared sensing chip and the microcontroller chip have metal layers to shield the thermal radiation. To measure object temperature accurately under acute change in environmental temperature, this disclosure uses the duo-thermopile sensing elements, that one is the active unit for measuring the object temperature and another one is the dummy unit for compensating the effect from the package structure.

Abstract: A method includes forming a first metallic feature, forming a dielectric layer over the first metallic feature, etching the dielectric layer to form an opening, with a top surface of the first metallic feature being exposed through the opening, and performing a first treatment on the top surface of the first metallic feature. The first treatment is performed through the opening, and the first treatment is performed using a first process gas. After the first treatment, a second treatment is performed through the opening, and the second treatment is performed using a second process gas different from the first process gas.

Abstract: A semiconductor device is provided, which includes a first semiconductor structure, a second semiconductor structure, and an active region. The first semiconductor structure includes a first dopant. The second semiconductor structure is located on the first semiconductor structure and includes a second dopant different from the first dopant. The active region includes a plurality of semiconductor pairs and located between the first semiconductor structure and the second semiconductor structure. Each semiconductor pair includes a barrier layer and a well layer and includes the first dopant. The active region does not include a nitrogen element. A doping concentration of the first dopant in the first semiconductor structure is higher than a doping concentration of the first dopant in the active region.

Abstract: An adjustable notebook computer support includes a carrier member holding a notebook computer, a base member having a sliding slot, a first link that has one end pivoted to one end of the carrier member and the other end pivoted to one end of the base member, a second link that has one end pivoted to the other end of the carrier member and the other end coupled to and movable along the sliding slot of the base member, a braking unit movable between an unlocking position for allowing adjustment of the elevation and angle of the first and second links relative to the carrier member and a locking position where the first and second links are locked to the carrier member.

Abstract: An adjustable notebook computer support includes a carrier member holding a notebook computer, a base member having a sliding slot, a first link that has one end pivoted to one end of the carrier member and the other end pivoted to one end of the base member, a second link that has one end pivoted to the other end of the carrier member and the other end coupled to and movable along the sliding slot of the base member, a braking unit movable between an unlocking position for allowing adjustment of the elevation and angle of the first and second links relative to the carrier member and a locking position where the first and second links are locked to the carrier base.

Abstract: A paper clip having a rectangular flat base frame defining a rectangular opening, a flat upright perpendicularly upwardly extending from one inner short side of the base frame, a flat clamping arm obliquely downwardly extending from the top of the flat upright toward the opposite inner short side of the base frame for holding down paper sheet members or the like on the base frame, and a flat endpiece obliquely extending from the free end of the flat clamping arm in a direction away from the base frame.

Abstract: A travel bag is disclosed having a wheeled foldaway support pivoted to the back side of the wheeled bag thereof and coupled to the bottom end of the retractable handle thereof through links such that when the retractable handle is pulled out of the wheeled bag, the wheeled foldaway support is turned outwards from the back side of the wheeled bag for supporting the wheeled bag on the floor in a tilted position.

Abstract: A luggage cart is disclosed, which comprises a supplementary support device equipped with a roller and pivoted to the back side of the cart body of the luggage cart and turnable relative to the cart body between a first position where the supplementary support device is closely attached to the back side of the cart body, and a second position where the supplementary support device works with the wheels at the back side of the cart body to support the luggage cart stably on the floor in a tilted position.