Patents by Inventor Ming-Hsuan Tsai

Ming-Hsuan Tsai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11920020
    Abstract: A composite material including a nanocellulose core and a metal shell is provided. The metal shell covers a surface of the nanocellulose core. The composite material is nanosized and has high mechanical strength. Additionally, a method of manufacturing the composite material is also provided.
    Type: Grant
    Filed: December 11, 2020
    Date of Patent: March 5, 2024
    Assignee: Winbond Electronics Corp.
    Inventors: Ming-Chih Tsai, Yu-Hsuan Ho
  • Patent number: 11915980
    Abstract: Metal gate cutting techniques for fin-like field effect transistors (FinFETs) are disclosed herein. An exemplary method includes receiving an integrated circuit (IC) device structure that includes a substrate, one or more fins disposed over the substrate, a plurality of gate structures disposed over the fins, a dielectric layer disposed between and adjacent to the gate structures, and a patterning layer disposed over the gate structures. The gate structures traverses the fins and includes first and second gate structures. The method further includes: forming an opening in the patterning layer to expose a portion of the first gate structure, a portion of the second gate structure, and a portion of the dielectric layer; and removing the exposed portion of the first gate structure, the exposed portion of the second gate structure, and the exposed portion of the dielectric layer.
    Type: Grant
    Filed: December 12, 2022
    Date of Patent: February 27, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Ya-Yi Tsai, Yi-Hsuan Hsiao, Shu-Yuan Ku, Ryan Chia-Jen Chen, Ming-Ching Chang
  • Patent number: 10942555
    Abstract: A power supplying method for a computer system is proposed. The computer system includes a first computer node, a first power supply unit corresponding to the first computer node, a second computer node, a second power supply unit corresponding to the second computer node, and a connection module electrically connected to the computer nodes and the power supply units. The power supplying method includes: detecting, by the first computer node, whether the second power supply unit operates abnormally; and upon detecting at least that the second power supply unit operates abnormally, controlling, by the first computer node, the first power supply unit to provide electric power to the second computer node through the connection module.
    Type: Grant
    Filed: October 18, 2018
    Date of Patent: March 9, 2021
    Assignee: Mitac Computing Technology Corporation
    Inventors: Ming-Li Tsai, Jyun-Jie Wang, Cheng-Tung Wang, Chia-Ming Liu, Ming-Hsuan Tsai
  • Publication number: 20190121413
    Abstract: A power supplying method for a computer system is proposed. The computer system includes a first computer node, a first power supply unit corresponding to the first computer node, a second computer node, a second power supply unit corresponding to the second computer node, and a connection module electrically connected to the computer nodes and the power supply units. The power supplying method includes: detecting, by the first computer node, whether the second power supply unit operates abnormally; and upon detecting at least that the second power supply unit operates abnormally, controlling, by the first computer node, the first power supply unit to provide electric power to the second computer node through the connection module.
    Type: Application
    Filed: October 18, 2018
    Publication date: April 25, 2019
    Inventors: Ming-Li TSAI, Jyun-Jie WANG, Cheng-Tung WANG, Chia-Ming LIU, Ming-Hsuan TSAI
  • Publication number: 20120083088
    Abstract: An integrated circuit device and method for manufacturing the integrated circuit device is disclosed. The disclosed method provides improved control over a surface proximity and tip depth of integrated circuit device. In an embodiment, the method achieves improved control by forming a doped region and a lightly doped source and drain (LDD) region in a source and drain region of the device. The doped region is implanted with a dopant type opposite the LDD region.
    Type: Application
    Filed: September 22, 2011
    Publication date: April 5, 2012
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Ming-Hsuan Tsai, Chun-Fai Cheng, Hui Ouyang, Yuan-Hung Chiu, Yen-Ming Chen