Abstract: A semiconductor chip includes a first intellectual property block. There are a second intellectual property block and a third intellectual property block around the first intellectual property block. There is a multiple metal layer stack over the first intellectual property block, the second intellectual property block, and the third intellectual property block. An interconnect structure is situated in the upper portion of the multiple metal layer stack. The interconnect structure is configured for connecting the first intellectual property block and the second intellectual property block. In addition, at least a part of the interconnect structure extends across and over the third intellectual property block.

Abstract: A routing structure between dies is provided, including a trace layer, disposed on a substrate, wherein a plurality of routing paths is embedded in the trace layer. In addition, a first die and a second die are disposed on the trace layer and connected by the routing paths. A spacing gap between the first die and the second die is along a first direction and interfacing edges of the first die and the second die are extending along a second direction perpendicular to the first direction. Each of the routing paths includes a first straight portion in parallel to connect to the interfacing edges. The first straight portion has a slant angle with respect to the first direction other than 0° and 90°.

Abstract: A routing structure between dies is provided, including a trace layer, disposed on a substrate, wherein a plurality of routing paths is embedded in the trace layer. In addition, a first die and a second die are disposed on the trace layer and connected by the routing paths. A spacing gap between the first die and the second die is along a first direction and interfacing edges of the first die and the second die are extending along a second direction perpendicular to the first direction. Each of the routing paths includes a first straight portion in parallel to connect to the interfacing edges. The first straight portion has a slant angle with respect to the first direction other than 0° and 90°.

Abstract: A semiconductor wiring substrate includes a first wiring layer, a second wiring layer stacked on the first wiring layer, and a dielectric layer sandwiched between the first wiring layer and the second wiring layer. The first wiring layer includes first signal lines and first grounding lines which are interleaved and spaced apart in the first wiring layer. The second wiring layer includes second signal lines and second grounding lines which are interleaved and spaced apart in the second wiring layer. An orthographic projection of one of the second signal lines to the first wiring layer is located between each two adjacent ones of the first signal lines.

Abstract: A semiconductor wiring substrate includes a first wiring layer, a second wiring layer stacked on the first wiring layer, and a dielectric layer sandwiched between the first wiring layer and the second wiring layer. The first wiring layer includes first signal lines and first grounding lines which are interleaved and spaced apart in the first wiring layer. The second wiring layer includes second signal lines and second grounding lines which are interleaved and spaced apart in the second wiring layer. An orthographic projection of one of the second signal lines to the first wiring layer is located between each two adjacent ones of the first signal lines.

Abstract: In a group decision method on ranking of a large number of alternatives, multiple alternatives are re-grouped into subgroups, and each alternative in every subgroup are evaluated based on information of each alternative to generate a ranking number for each alternative in every subgroup. Then, a normalized score for each alternative in every subgroup are determined to generate an average normalized score for each alternative, so as to increase the accuracy of ranking results of alternatives in a large scale competition.