Patents by Inventor Ming-Hsun Kuo

Ming-Hsun Kuo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Self-cleaning etch process
    Patent number: 6699399
    Abstract: A process for etching a substrate 25 in an etching chamber 30, and simultaneously cleaning a thin, non-homogeneous, etch residue deposited on the surfaces of the walls 45 and components of the etching chamber 30. In the etching step, process gas comprising etchant gas is used to etch a substrate 25 in the etching chamber 30 thereby depositing etch residue inside the chamber 30. Cleaning gas is added to the process gas for a sufficient time and in a volumetric flow ratio that is sufficiently high, to react with and remove substantially all the etch residue deposited by the process gas. The present method advantageously cleans the etch residue in the chamber 30, during the etching process, and without use of separate cleaning, conditioning, and seasoning process steps.
    Type: Grant
    Filed: September 8, 2000
    Date of Patent: March 2, 2004
    Assignee: Applied Materials, Inc
    Inventors: Xue-Yu Qian, Zhi-Wen Sun, Weinan Jiang, Arthur Y. Chen, Gerald Zheyao Yin, Ming-Hsun Yang, Ming-Hsun Kuo, David S. L. Mui, Jeffrey Chinn, Shaoher X. Pan, Xikun Wang
  • Self-cleaning etch process
    Patent number: 6136211
    Abstract: A process for etching a substrate 25 in an etching chamber 30, and simultaneously cleaning a thin, non-homogeneous, etch residue deposited on the surfaces of the walls 45 and components of the etching chamber 30. In the etching step, process gas comprising etchant gas is used to etch a substrate 25 in the etching chamber 30 thereby depositing etch residue inside the chamber 30. Cleaning gas is added to the process gas for a sufficient time and in a volumetric flow ratio that is sufficiently high, to react with and remove substantially all the etch residue deposited by the process gas. The present method advantageously cleans the etch residue in the chamber 30, during the etching process, and without use of separate cleaning, conditioning, and seasoning process steps.
    Type: Grant
    Filed: November 12, 1997
    Date of Patent: October 24, 2000
    Assignee: Applied Materials, Inc.
    Inventors: Xue-Yu Qian, Zhi-Wen Sun, Weinan Jiang, Arthur Y. Chen, Gerald Zheyao Yin, Ming-Hsun Yang, Ming-Hsun Kuo, David S. L. Mui, Jeffrey Chinn, Shaoher X. Pan, Xikun Wang