Abstract: A method is described. The method includes obtaining a relationship between a thickness of a contamination layer formed on a mask and an amount of compensation energy to remove the contamination layer, obtaining a first thickness of a first contamination layer formed on the mask from a thickness measuring device, and applying first compensation energy calculated from the relationship to a light directed to the mask.

Abstract: Some implementations described herein include an etch tool including a combination bottom shadow ring component including a moveable inner ring component and a fixed inner ring component. The moveable inner ring component provides for an adjustability of an effective thickness of the combination bottom shadow ring component during an etching operation. The adjustability (e.g., “tunability”) of the effective thickness of the combination bottom shadow ring component enables flexibility and is conducive to changes in one or more parameters related to different etch recipes for a semiconductor substrate. Additionally, the fixed inner ring component shadows beveled regions of the semiconductor substrate during the etching operation to reduce a likelihood of damage to the beveled regions.

Abstract: A method is described. The method includes obtaining a relationship between a thickness of a contamination layer formed on a mask and an amount of compensation energy to remove the contamination layer, obtaining a first thickness of a first contamination layer formed on the mask from a thickness measuring device, and applying first compensation energy calculated from the relationship to a light directed to the mask.

Abstract: Integrated circuits (ICs) and methods are provided. An IC includes a charge-storing device. The charge-storing device includes a first charge-storing stack extending into a substrate, and a second charge-storing stack extending into the substrate and adjacent to the first charge-storing stack along a first direction. The first charge-storing stack and the second charge-storing stack extend lengthwise along a second direction perpendicular to the first direction, and the first charge-storing stack and the second charge-storing stack have an offset along the second direction, the offset being greater than zero.

Abstract: Some implementations described herein include an integrated circuit device including landing circuitry and methods of formation. The landing circuitry, which may be part of a trench capacitor region, includes a stair-shaped profile that extends into a silicon substrate of the integrated circuit device. The landing circuitry includes electrode layers of the trench capacitor region interspersed with layers of a dielectric material. The landing circuitry further includes spacer structures on ends of the electrode layers along the stair-shaped profile.

Abstract: Some implementations described herein include a deep trench capacitor structure and methods of formation. The deep trench capacitor structure may penetrate vertically into a silicon substrate. In some implementations, formation of the deep trench capacitor structure includes forming segments of a deep trench capacitor recess using a combination of in-situ oxidation/nitridation, ex-situ deposition, and reactive ion etching techniques. By forming the deep trench capacitor recess using the in-situ oxidation/nitridation operation, the ex-situ deposition, and the reactive ion etching techniques, a deep trench capacitor structure may be formed that meets target critical dimensions and has an aspect ratio of approximately 50:1.

Abstract: A method is described. The method includes obtaining a relationship between a thickness of a contamination layer formed on a mask and an amount of compensation energy to remove the contamination layer, obtaining a first thickness of a first contamination layer formed on the mask from a thickness measuring device, and applying first compensation energy calculated from the relationship to a light directed to the mask.

Abstract: A method is described. The method includes obtaining a relationship between a thickness of a contamination layer formed on a mask and an amount of compensation energy to remove the contamination layer, obtaining a first thickness of a first contamination layer formed on the mask from a thickness measuring device, and applying first compensation energy calculated from the relationship to a light directed to the mask.

Abstract: A method is described. The method includes obtaining a relationship between a thickness of a contamination layer formed on a mask and an amount of compensation energy to remove the contamination layer, obtaining a first thickness of a first contamination layer formed on the mask from a thickness measuring device, and applying first compensation energy calculated from the relationship to a light directed to the mask.

Abstract: A folding collapsible wireless transmitter-receiver earphone is constructed to include a base unit holding a circuit board and a speaker, the base unit having an axle holder at one end, and an extension unit holding a microphone, the extension unit having a short pivot shaft pivoted to the axle holder of the base unit and a wire passageway through which the signal line connecting the microphone to the circuit board passes.

Abstract: A battery cap and wireless transmitter-receiver circuit assembly for mobile telephone is constructed to include a battery cap covered on the battery chamber of a mobile telephone, a battery installed in the battery cap, a wireless transmitter-receiver circuit installed in the battery cap, the wireless transmitter-receiver circuit having a signal line adapted for connection to the voice signal input/output jack of the mobile telephone for enabling the mobile telephone to communicate with a remote wireless transmitter-receiver device; and an on/off switch installed in the battery cap and adapted for controlling the operation of the wireless transmitter-receiver circuit.