Abstract: A semiconductor device includes an oxide semiconductor layer, disposed over a substrate. A source electrode of a metal nitride is disposed on the oxide semiconductor layer. A drain electrode of the metal nitride is disposed on the oxide semiconductor layer. A metal-nitride oxidation layer is formed on a surface of the source electrode and the drain electrode. A ratio of a thickness of the metal-nitride oxidation layer to a thickness of the drain electrode or the source electrode is equal to or less than 0.2.

Abstract: A circuit board having a high reflectivity includes a wiring board, a first solder resist layer, and a second solder resist layer. The wiring board includes a wiring layer on an outer side, the wiring layer including wiring and a bond pad spaced from the wiring. The first solder resist layer, with opening and groove, covers the wiring layer, the bond pad is exposed from the opening but spaced from the first solder resist layer. The second solder resist layer infills the groove and covers the first solder resist layer but does not make contact with the mounting surface of the bond pad. A method for manufacturing such circuit board is also disclosed.

Abstract: A circuit board having a high reflectivity includes a wiring board, a first solder resist layer, and a second solder resist layer. The wiring board includes a wiring layer on an outer side, the wiring layer including wiring and a bond pad spaced from the wiring. The first solder resist layer, with opening and groove, covers the wiring layer, the bond pad is exposed from the opening but spaced from the first solder resist layer. The second solder resist layer infills the groove and covers the first solder resist layer but does not make contact with the mounting surface of the bond pad. A method for manufacturing such circuit board is also disclosed.

Abstract: A semiconductor device includes an oxide semiconductor layer, disposed over a substrate. A source electrode of a metal nitride is disposed on the oxide semiconductor layer. A drain electrode of the metal nitride is disposed on the oxide semiconductor layer. A metal-nitride oxidation layer is formed on a surface of the source electrode and the drain electrode. A ratio of a thickness of the metal-nitride oxidation layer to a thickness of the drain electrode or the source electrode is equal to or less than 0.2.

Abstract: A semiconductor device includes an oxide semiconductor layer, disposed over a substrate. A source electrode of a metal nitride is disposed on the oxide semiconductor layer. A drain electrode of the metal nitride is disposed on the oxide semiconductor layer. A metal-nitride oxidation layer is formed on a surface of the source electrode and the drain electrode. A ratio of a thickness of the metal-nitride oxidation layer to a thickness of the drain electrode or the source electrode is equal to or less than 0.2.

Abstract: A method for manufacturing a waterproof circuit board comprises steps of providing a first wiring substrate suitable for high-frequency transmissions. The first wiring substrate includes a first copper layer and a first conductive wiring layer. A waterproof layer is formed on exposed surfaces of the first wiring substrate. A second wiring substrate suitable for low-frequency transmissions defines a receiving groove. The second wiring substrate includes a second copper layer and defines a first blind hole. The first wiring substrate is pressed in the receiving groove. A first conductive portion is formed in the first blind hole to electrically connect the first conductive wiring layer and the second copper layer.

Abstract: A method of fabricating a metal layer includes performing a first re-sputtering to remove a metal compound formed on a conductive layer. The first re-sputtering includes bombarding the metal compound and a dielectric layer on the conductive layer by inert ions and metal atoms. Then, a barrier is formed on the dielectric layer and the conductive layer. Later, a bottom of the barrier is removed. Subsequently, a metal layer is formed to cover the barrier.

Abstract: A semiconductor device includes an oxide semiconductor layer, disposed over a substrate. A source electrode of a metal nitride is disposed on the oxide semiconductor layer. A drain electrode of the metal nitride is disposed on the oxide semiconductor layer. A metal-nitride oxidation layer is formed on a surface of the source electrode and the drain electrode. A ratio of a thickness of the metal-nitride oxidation layer to a thickness of the drain electrode or the source electrode is equal to or less than 0.2.

Abstract: A semiconductor device includes an oxide semiconductor layer, disposed over a substrate. A source electrode of a metal nitride is disposed on the oxide semiconductor layer. A drain electrode of the metal nitride is disposed on the oxide semiconductor layer. A metal-nitride oxidation layer is formed on a surface of the source electrode and the drain electrode. A ratio of a thickness of the metal-nitride oxidation layer to a thickness of the drain electrode or the source electrode is equal to or less than 0.2.

Abstract: A method of fabricating a metal layer includes performing a first re-sputtering to remove a metal compound formed on a conductive layer. The first re-sputtering includes bombarding the metal compound and a dielectric layer on the conductive layer by inert ions and metal atoms. Then, a barrier is formed on the dielectric layer and the conductive layer. Later, a bottom of the barrier is removed. Subsequently, a metal layer is formed to cover the barrier.

Abstract: A semiconductor device includes an oxide semiconductor layer, disposed over a substrate. A source electrode of a metal nitride is disposed on the oxide semiconductor layer. A drain electrode of the metal nitride is disposed on the oxide semiconductor layer. A metal-nitride oxidation layer is formed on a surface of the source electrode and the drain electrode. A ratio of a thickness of the metal-nitride oxidation layer to a thickness of the drain electrode or the source electrode is equal to or less than 0.2.

Abstract: A transparent flexible printed circuit board (FPCB) of reduced thickness but good conductivity and transparency includes an insulating resin layer. The insulating resin layer has a first surface and a second surface. At least one through hole is defined in the insulating resin layer through the first surface and the second surface. A conductive wiring layer is formed on the first surface and a wiring layer is formed on the second surface. The conductive wiring layers are made of electrically conductive resin, and have wiring openings. A cover film covers each of the conductive wiring layers, and further infills the wiring openings.