Patents by Inventor Ming-Hua Du

Ming-Hua Du has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10681824
    Abstract: A method for manufacturing a waterproof circuit board comprises steps of providing a first wiring substrate suitable for high-frequency transmissions. The first wiring substrate includes a first copper layer and a first conductive wiring layer. A waterproof layer is formed on exposed surfaces of the first wiring substrate. A second wiring substrate suitable for low-frequency transmissions defines a receiving groove. The second wiring substrate includes a second copper layer and defines a first blind hole. The first wiring substrate is pressed in the receiving groove. A first conductive portion is formed in the first blind hole to electrically connect the first conductive wiring layer and the second copper layer.
    Type: Grant
    Filed: December 6, 2019
    Date of Patent: June 9, 2020
    Assignees: HongQiSheng Precision Electronics (QinHuangDao) Co., Ltd., Avary Holding (Shenzhen) Co., Limited.
    Inventors: Jian-Yi Hao, Yan-Lu Li, Xian-Qin Hu, Ming-Hua Du
  • Patent number: 10510549
    Abstract: A method of fabricating a metal layer includes performing a first re-sputtering to remove a metal compound formed on a conductive layer. The first re-sputtering includes bombarding the metal compound and a dielectric layer on the conductive layer by inert ions and metal atoms. Then, a barrier is formed on the dielectric layer and the conductive layer. Later, a bottom of the barrier is removed. Subsequently, a metal layer is formed to cover the barrier.
    Type: Grant
    Filed: December 25, 2017
    Date of Patent: December 17, 2019
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Shouguo Zhang, Hai Tao Liu, Ming Hua Du, Yen-Chen Chen
  • Publication number: 20190267492
    Abstract: A semiconductor device includes an oxide semiconductor layer, disposed over a substrate. A source electrode of a metal nitride is disposed on the oxide semiconductor layer. A drain electrode of the metal nitride is disposed on the oxide semiconductor layer. A metal-nitride oxidation layer is formed on a surface of the source electrode and the drain electrode. A ratio of a thickness of the metal-nitride oxidation layer to a thickness of the drain electrode or the source electrode is equal to or less than 0.2.
    Type: Application
    Filed: May 15, 2019
    Publication date: August 29, 2019
    Applicant: United Microelectronics Corp.
    Inventors: Yen-Chen Chen, Xiao Wu, Hai Tao Liu, Ming Hua Du, Shouguo Zhang, Yao-Hung Liu, Chin-Fu Lin, Chun-Yuan Wu
  • Patent number: 10340391
    Abstract: A semiconductor device includes an oxide semiconductor layer, disposed over a substrate. A source electrode of a metal nitride is disposed on the oxide semiconductor layer. A drain electrode of the metal nitride is disposed on the oxide semiconductor layer. A metal-nitride oxidation layer is formed on a surface of the source electrode and the drain electrode. A ratio of a thickness of the metal-nitride oxidation layer to a thickness of the drain electrode or the source electrode is equal to or less than 0.2.
    Type: Grant
    Filed: June 29, 2017
    Date of Patent: July 2, 2019
    Assignee: United Microelectronics Corp.
    Inventors: Yen-Chen Chen, Xiao Wu, Hai Tao Liu, Ming Hua Du, Shouguo Zhang, Yao-Hung Liu, Chin-Fu Lin, Chun-Yuan Wu
  • Publication number: 20190198334
    Abstract: A method of fabricating a metal layer includes performing a first re-sputtering to remove a metal compound formed on a conductive layer. The first re-sputtering includes bombarding the metal compound and a dielectric layer on the conductive layer by inert ions and metal atoms. Then, a barrier is formed on the dielectric layer and the conductive layer. Later, a bottom of the barrier is removed. Subsequently, a metal layer is formed to cover the barrier.
    Type: Application
    Filed: December 25, 2017
    Publication date: June 27, 2019
    Inventors: Shouguo Zhang, Hai Tao Liu, Ming Hua Du, Yen-Chen Chen
  • Publication number: 20190006519
    Abstract: A semiconductor device includes an oxide semiconductor layer, disposed over a substrate. A source electrode of a metal nitride is disposed on the oxide semiconductor layer. A drain electrode of the metal nitride is disposed on the oxide semiconductor layer. A metal-nitride oxidation layer is formed on a surface of the source electrode and the drain electrode. A ratio of a thickness of the metal-nitride oxidation layer to a thickness of the drain electrode or the source electrode is equal to or less than 0.2.
    Type: Application
    Filed: June 29, 2017
    Publication date: January 3, 2019
    Applicant: United Microelectronics Corp.
    Inventors: Yen-Chen Chen, Xiao Wu, Hai Tao Liu, Ming Hua Du, Shouguo Zhang, Yao-Hung Liu, Chin-Fu Lin, Chun-Yuan Wu
  • Patent number: 9860977
    Abstract: A transparent flexible printed circuit board (FPCB) of reduced thickness but good conductivity and transparency includes an insulating resin layer. The insulating resin layer has a first surface and a second surface. At least one through hole is defined in the insulating resin layer through the first surface and the second surface. A conductive wiring layer is formed on the first surface and a wiring layer is formed on the second surface. The conductive wiring layers are made of electrically conductive resin, and have wiring openings. A cover film covers each of the conductive wiring layers, and further infills the wiring openings.
    Type: Grant
    Filed: August 2, 2017
    Date of Patent: January 2, 2018
    Assignees: HongQiSheng Precision Electronics (QinHuangDao) Co., Ltd., Avary Holding (Shenzhen) Co., Limited.
    Inventors: Cheng-Jia Li, Ming-Hua Du, Gang Yuan