Abstract: A method for forming a semiconductor structure includes the steps of forming a stacked structure on a substrate, forming an insulating layer on the stacked structure, forming a passivation layer on the insulating layer, performing an etching process to form an opening through the passivation layer and the insulating layer to expose a portion of the stacked structure and an extending portion of the insulating layer, and forming a contact structure filling the opening and directly contacting the stacked structure, wherein the extending portion of the insulating layer is adjacent to a surface of the stacked structure directly contacting the contact structure.

Abstract: A semiconductor structure includes a substrate, a channel layer on the substrate, a barrier layer on the channel layer, a first passivation layer on the insulating layer, a contact structure disposed on the first passivation layer and extending through the first passivation layer to directly contact a portion of the barrier layer, and an insulating layer interposed between the barrier layer and the first passivation layer and comprising an extending portion protruding toward a bottom corner of the contact structure.

Abstract: A fabricating method of a high electron mobility transistor includes providing a substrate. Then, a channel layer, an active layer, a P-type group III-V compound material layer, a metal compound material layer, a hard mask material layer and a patterned photoresist are formed to cover the substrate. Later, a dry etching process is performed to etch the hard mask material layer and the metal compound material layer to form a hard mask and a metal compound layer by taking the patterned photoresist as a mask. During the dry etching process, a spacer generated by by-products is formed to surround the patterned photoresist, the hard mask and the metal compound layer. After the dry etching process, the P-type group III-V compound material layer is etched by taking the spacer and the patterned photoresist as a mask.

Abstract: A package structure is provided. The package structure includes a semiconductor die over a redistribution structure, bonding elements below the redistribution structure, and an underfill layer surrounding the bonding elements and the redistribution structure. The semiconductor die has a rectangular profile in a plan view. A pitch of the bonding elements is defined as the sum of a diameter of the bonding elements and a spacing between neighboring two of the bonding elements. A first circular area of the redistribution structure is entirely covered and in direct contact with the underfill layer. The center of the first circular area is aligned with a first corner of the rectangular profile of the semiconductor die. A diameter of the first circular area is greater than twice the pitch of the bonding elements.

Abstract: A fan-out package includes a redistribution structure having redistribution-side bonding structures, a plurality of semiconductor dies including a respective set of die-side bonding structures that is attached to a respective subset of the redistribution-side bonding structures through a respective set of solder material portions, and an underfill material portion laterally surrounding the redistribution-side bonding structures and the die-side bonding structures of the plurality of semiconductor dies. A subset of the redistribution-side bonding structures is not bonded to any of the die-side bonding structures of the plurality of semiconductor dies and is laterally surrounded by the underfill material portion, and is used to provide uniform distribution of the underfill material during formation of the underfill material portion.

Abstract: A semiconductor structure includes a substrate, a stacked structure on the substrate, an insulating layer on the stacked structure, a passivation layer on the insulating layer, and a contact structure through the passivation layer and the insulating layer and directly contacting the stacked structure. The insulating layer has an extending portion protruding from a sidewall of the passivation layer and adjacent to a surface of the stacked structure directly contacting the contact structure.

Abstract: A package structure and method of manufacturing is provided, whereby heat dissipating features are provided for heat dissipation. Heat dissipating features include conductive vias formed in a die stack, thermal chips, and thermal metal bulk, which can be bonded to a wafer level device. Hybrid bonding including chip to chip, chip to wafer, and wafer to wafer provides thermal conductivity without having to traverse a bonding material, such as a eutectic material. Plasma dicing the package structure can provide a smooth sidewall profile for interfacing with a thermal interface material.

Abstract: A liquid crystal display (LCD) panel adapted to alleviate the separation issue between the pixel array substrate and the opposite substrate is provided. The LCD panel includes a pixel array substrate, a first sealant pattern, a liquid crystal layer, a second sealant pattern and an opposite substrate. The pixel array substrate has an active region and a peripheral region surrounding the active region. The first sealant pattern surrounds the active region. The liquid crystal layer is located on the active region and is located inside the first sealant pattern. The second sealant pattern is located outside the first sealant pattern, and the second sealant pattern includes at least one two-dimensional extending structure. The at least one two-dimensional extending structure is located outside a sidewall corresponding to the first sealant pattern, and includes a plurality of turning structures. The opposite substrate faces the pixel array substrate.

Abstract: The present invention discloses a novel and inventive transparent conductive film Differing from conventional metal mesh substrates are mainly constituted by silver nanowires (AgNW), the present invention particularly designs a nano metal wire consisting of a metallic core wire, a transition layer and a protection layer, and further develops a transparent conductive film consisting of a substrate and a metal mesh layer; wherein the metal mesh layer is constituted by the said nano metal wires. It is worth describing that, a variety of experimental data prove that the thermal resistance of this novel transparent conductive film is up to 400° C.; moreover, experimental data also exhibit that the transparent conductive film can filter part of blue light portion out of a white light by 20-30%.

Abstract: The present invention discloses a novel and inventive transparent conductive film Differing from conventional metal mesh substrates are mainly constituted by silver nanowires (AgNW), the present invention particularly designs a nano metal wire consisting of a metallic core wire, a transition layer and a protection layer, and further develops a transparent conductive film consisting of a substrate and a metal mesh layer; wherein the metal mesh layer is constituted by the said nano metal wires. It is worth describing that, a variety of experimental data prove that the thermal resistance of this novel transparent conductive film is up to 400° C.; moreover, experimental data also exhibit that the transparent conductive film can filter part of blue light portion out of a white light by 20-30%.

Abstract: The present disclosure provides an optical readout imaging system may include first electrode, a thin film disposed on the first electrode, a biomolecule transfer layer disposed on the thin film, and a second electrode disposed on the biomolecule transfer layer. The present disclosure also provides a biochemical detection method using the optical readout imaging system.

Abstract: A bonding structure comprising a contact pad, an anisotropic conductive film (ACF) and a contact structure is provided. The contact pad includes at least one recess, wherein a thickness of the contact pad is T, and a width of the at least one recess is B, The ACF is disposed on the contact pad and includes a plurality of conductive particles; each of the conductive particles is disposed in the at least one recess. A diameter of the conductive particles is A, and A is larger than B and T and satisfies B?2(AT?T2)1/2. The contact structure is disposed on the ACF and electrically connected to the contact pad via the conductive particles. The disclosure also provides a flexible device including a substrate, a patterned insulating layer, at least one contact pad, ACF, and a contact structure.

Abstract: A quantum dot-containing wavelength converter includes a matrix layer and quantum dots dispersed in the matrix layer. Each of the quantum clots includes a core of a compound M1A1, an inner shell, and a multi-pod-structured outer shell of a compound M1A2 or M2A2. Each of M1 and M2 is a metal selected from Zn, Sn, Pb, Cd, In, Ga, Ge, Mn, Co, Fe, Al, Mg, Ca, Sr, Ba, Ni, Ag, Ti and Cu, and each of A1 and A2 is an element selected from Se, S, Te, P, As, N, I, and O. The inner shell contains a compound M1xM21-xAlyA21-y, wherein M2 is different from M1 and A2 is different from A1. The multi-pod-structured outer shell has a base portion and protrusion portions that extend from the base portion in a direction away from the inner shell.

Abstract: The present disclosure provides an optical readout imaging system may include first electrode, a thin film disposed on the first electrode, a biomolecule transfer layer disposed on the thin film, and a second electrode disposed on the biomolecule transfer layer. The present disclosure also provides a biochemical detection method using the optical readout imaging system.

Abstract: Disclosed is a flexible radiation detector including a substrate, a switching device on the substrate, an energy conversion layer on the switching device, a top electrode layer on the energy conversion layer, a first phosphor layer on the top electrode layer, and a second phosphor layer under the substrate.

Abstract: Disclosed is a flexible radiation detector including a substrate, a switching device on the substrate, an energy conversion layer on the switching device, a top electrode layer on the energy conversion layer, a first phosphor layer on the top electrode layer, and a second phosphor layer under the substrate.

Abstract: A human-machine interface device suitable for being electrically connected to an electronic device. The human-machine interface device includes a flexible carrier having at least one flexible portion, a bending sensor, and a control module. The bending sensor is disposed on the flexible portion of the flexible carrier. The control module is disposed on the carrier, connected to the bending sensor, and electrically connected to the electronic device. A first operation signal from the bending sensor is transmitted to the electronic device through the control module so that the electronic device performs according to the first operation signal.

Abstract: A touch panel and an electronic device thereof are provided. The touch panel includes a film, a substrate and a plurality of dot spacers. The dot spacers are disposed on a surface of the substrate, and the surface faces the film. In addition, the number of/the volume of the dot spacers in each unit size of the substrate progressively decreases from the vertical-axis direction of the center of the substrate to the horizontal axis direction thereof.

Abstract: A touch panel and an electronic device thereof are provided. The touch panel includes a film, a substrate and a plurality of dot spacers. The dot spacers are disposed on a surface of the substrate, and the surface faces the film. In addition, the height of the dot spacers in each unit size of the substrate progressively decreases from the vertical-axis direction of the center of the substrate to the horizontal axis direction thereof.