Abstract: A micro light emitting device includes an epitaxial structure, a conductive layer, and a first insulating layer. The epitaxial structure has a first surface and a second surface opposite to the first surface, and includes a first semiconductor layer, an active layer and a second semiconductor layer that are arranged in such order in a direction from the first surface to the second surface. The conductive layer is formed on a surface of the first semiconductor layer away from the active layer. The first insulating layer is formed on the surface of the first semiconductor layer away from the active layer, and exposes at least a part of the conductive layer.

Abstract: A manufacturing method of a display device includes forming light emitting components on a first substrate, the light emitting components include a first side and a second side, and the second side is away from the first substrate; forming a circuit layer on the first substrate and on the second side of the light emitting components; forming a first protective layer on the circuit layer and forming an insulating layer on the first protective layer; removing the first substrate after forming a second substrate on the insulating layer; forming a black matrix layer on the first side of the light emitting components, and the black matrix layer includes openings; forming light conversion layers in the openings of the black matrix layer; forming a second protective layer on the black matrix layer and the light conversion layers; and forming a third substrate on the second protective layer.

Abstract: An electronic includes an electronic element, an encapsulation layer surrounding the electronic element, a first circuit structure, a second circuit structure and a connecting structure. The encapsulation layer has a top surface, a bottom surface and an opening, wherein a sidewall of the opening connects the top surface and the bottom surface. The first circuit structure is disposed at the top surface of the encapsulation layer. The second circuit structure is disposed at the bottom surface of the encapsulation layer. The connecting structure is disposed in the opening, wherein the electronic element is electrically connected to the second circuit structure through the first circuit structure and the connecting structure. The connecting structure includes a first sub layer and a second sub layer, the first sub layer is located between the encapsulation layer and the second sub layer, and the first sub layer covers the sidewall of the opening.

Abstract: A display substrate and related devices are provided. The display substrate includes a plurality of first sub-pixels, second sub-pixels and third sub-pixels. In a first direction, the first sub-pixels and the third sub-pixels are arranged alternately to form a plurality of first sub-pixel rows, the second sub-pixels form a plurality of second sub-pixel rows, the first sub-pixel rows and the second sub-pixel rows are arranged alternately in a second direction, connection lines of center points of two first sub-pixels and two third sub-pixels form a first virtual quadrilateral, the two first sub-pixels are located at two vertex angles of the first virtual quadrilateral which are opposite to each other, one second sub-pixel is located within the first virtual quadrilateral, and the first virtual quadrilateral includes two interior angles each being equal to 90° and two interior angles each being not equal to 90°.

Abstract: A gas flow accelerator may include a body portion, and a tapered body portion including a first end integrally formed with the body portion. The gas flow accelerator may include an inlet port connected to the body portion and to receive a process gas to be removed from a semiconductor processing tool by a main pumping line. The semiconductor processing tool may include a chuck and a chuck vacuum line to apply a vacuum to the chuck to retain a semiconductor device. The tapered body portion may be configured to generate a rotational flow of the process gas to prevent buildup of processing byproduct on interior walls of the main pumping line. The gas flow accelerator may include an outlet port integrally formed with a second end of the tapered body portion. An end portion of the chuck vacuum line may be provided through the outlet port.

Abstract: This application discloses a multi-link establishment method and a related device. A multi-link association response frame carries radio bitmap information, to indicate an AP allowed to be associated with a radio of a STA MLD or a link allowed to be established by using a radio of a STA MLD, so that the radio subsequently switches between different APs or links. The multi-link association response frame carries link establishment status information, to indicate a link establishment status of each link that the STA MLD requests to establish, so that multi-link establishment is more flexible. The multi-link association response frame carries reassociation information, to indicate whether each parameter in association configuration information is reserved, so that a problem that signaling overheads are relatively large due to a reassociation operation is avoided. It can be learned that, in the multi-link establishment method, the foregoing information is carried to improve multi-link establishment flexibility.

Abstract: A semiconductor device includes a fin-shaped structure on a substrate, a gate structure on the fin-shaped structure and an interlayer dielectric (ILD) layer around the gate structure, and a single diffusion break (SDB) structure in the ILD layer and the fin-shaped structure. Preferably, the SDB structure includes a bottom portion and a top portion on the bottom portion, in which the top portion and the bottom portion include different widths.

Abstract: A semiconductor device includes a semiconductor substrate, ground level circuitry, a plurality of stacked memory arrays and a plurality of sense amplifier units. The ground level circuitry is disposed on the semiconductor substrate. The stacked memory arrays are disposed at an elevated level over the ground level circuitry. The sense amplifier units are disposed on the semiconductor substrate and electrically coupled to the stacked memory arrays, wherein at least a portion of each of the sense amplifier units is disposed at the elevated level over the ground level circuitry.

Abstract: A riding mowing device includes a seat used for a user to sit on and including a seat cushion and a backrest; a frame for supporting the seat; a cutting assembly including a cutting deck and a mowing element for mowing grass, where the mowing element is at least partially accommodated in the cutting deck, and the cutting assembly is mounted to the frame; a traveling assembly for driving the riding mowing device to travel; a control circuit board for controlling at least the cutting assembly and the traveling assembly; and a power supply assembly for supplying power to at least the cutting assembly and the traveling assembly. At least part of the control circuit board is disposed between the seat and the power supply assembly.

Abstract: An intraocular pressure inspection device includes an intraocular pressure detection unit, a high-precision positioning system and a wide-area positioning system, wherein according to the position of the intraocular pressure detection unit, a set of high-precision coordinates output by the high-precision positioning system and a set of wide-area coordinates output by the wide-area positioning system are integrated in appropriate weights to obtain a set of more precise integrated coordinate. The above-mentioned intraocular pressure inspection device can prevent the intraocular pressure detection unit from failing to operate once it is not in the working area of the high-precision positioning system.

Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a first barrier layer on the buffer layer; forming a first hard mask on the first barrier layer; removing the first hard mask and the first barrier layer to form a recess; forming a second barrier layer in the recess; and forming a p-type semiconductor layer on the second barrier layer.

Abstract: A multicolor light mixing module includes a collimator lens disposed on a light-entrance axis and having first and second lens portions, a laser source set including first and second lighting units arranged sequentially for emitting first and second color lights respectively, a reflective unit, a reflective diffusing member and a lens array disposed corresponding to at least one of the first and second lens portions for mixing the first and second color lights. The reflective unit is obliquely disposed on the light-entrance axis and opposite to the first and second lighting units for reflecting the first and second color lights to the first lens portion along the light-entrance axis. The reflective diffusing member is disposed at a side of the collimator lens to homogenize the first and second laser lights and reflect the first and second color lights to the second lens portion along a first light-exit axis.

Abstract: A wireless power transfer apparatus includes a first control system, a first energy transmission system, and a second energy transmission system. The first control system is coupled to the first energy transmission system, and inputs an energy transmission signal to the first energy transmission system. The first energy transmission system is coupled to the second energy transmission system, and inputs some of the energy transmission signals obtained from the first control system into the second energy transmission system. Both the energy transmission signal obtained by the first energy transmission signal from the first control system and an energy transmission signal obtained by the second energy transmission system from the first energy transmission system supply power to a target device.

Abstract: A light source module includes a first light source, a second light source, a first reflective layer and a second reflective layer. The first light source is configured to emit a first light having a first wavelength. The second light source is configured to emit a second light having the first wavelength. The first reflective layer is disposed opposite to the first light source and configured to reflect the first light. The second reflective layer is disposed opposite to the second light source and configured to reflect the second light. The first reflective layer and the second reflective layer are configured to reflect light of any wavelength in a visible spectrum.

Abstract: The present disclosure relates to an integrated chip. The integrated chip includes a substrate having a first semiconductor material. A second semiconductor material is disposed on the first semiconductor material and a passivation layer is disposed on the second semiconductor material. A first doped region and a second doped region extend through the passivation layer and into the second semiconductor material. A silicide is arranged within the passivation layer and along tops of the first doped region and the second doped region.

Abstract: The present disclosure provides an imaging optical lens assembly, including, in order from an object side to an image side: a first lens element with negative refractive power having an object-side surface being concave in a paraxial region, a second lens element with positive refractive power, a third lens element with negative refractive power, a fourth lens element with positive refractive power, and a fifth lens element with negative refractive power having an image-side surface being concave in a paraxial region and at least one convex shape in an off-axial region on the image-side surface, wherein the imaging optical lens assembly has a total of five lens elements.

Abstract: A display panel, a driving method thereof, and a display apparatus. The display panel includes a shift register circuit including shift units. The shift unit includes a first output circuit, a control circuit, and a first node. In a first mode, a display region includes a first sub-region refreshed with a first frequency and a second sub-region refreshed with a second frequency. The shift register circuit includes a first unit group and a second unit group. In some frames, the first and second unit groups output an active scanning level, and in some frames, the control circuit in a first shift unit supplies a non-enabling level to the first node at least after the first unit group outputs the active scanning level. The first shift unit is located in the second unit group and is adjacent to the first unit group.

Abstract: A projection device, including a light source module and a color wheel, is provided. The light source module includes a plurality of solid-state lighting sources driven by a DC drive power to sequentially provide a first light generated by a first number of light sources, a second light generated by a second number of light sources and a third light generated by a third number of light sources within a response cycle, wherein the number of light sources to be turn on is less than or equivalent to a total number of solid-state lighting sources. The color wheel has a first block, a second block and a third block, respectively corresponding to the first to third lights, so that the projection device sequentially outputs a first color light with a first brightness, a second color light with a second brightness and a third color light with a third brightness.

Abstract: The present disclosure relates to methods and apparatuses for reporting buffered data. In one example method, a station (STA) generates a first frame, where the first frame includes first information, the first information includes time information, the time information indicates a first time, and a first buffered data packet needs to be sent within the first time. The STA sends the first frame.

Abstract: This application is applicable to a group addressed traffic transmission method applicable to a plurality of links and an apparatus. In the method, group addressed traffic indication information is used to indicate whether each AP or an AP other than a first AP in an AP MLD has group addressed traffic; or group addressed traffic indication information is used to indicate whether each AP or an AP other than a first AP in an AP MLD and each AP or an AP other than a non-transmitted AP in an AP MLD in which the non-transmitted AP in a multiple BSSID set in which the first AP is located have group addressed traffic. This application is applied to a wireless local area network system that supports an IEEE 802.11ax next-generation Wi-Fi EHT protocol, for example, an 802.11 series protocol such as 802.11be.