Patent number: 12271113
Abstract: Method of manufacturing semiconductor device includes forming photoresist layer over substrate. Forming photoresist layer includes combining first precursor and second precursor in vapor state to form photoresist material, wherein first precursor is organometallic having formula: MaRbXc, where M at least one of Sn, Bi, Sb, In, Te, Ti, Zr, Hf, V, Co, Mo, W, Al, Ga, Si, Ge, P, As, Y, La, Ce, Lu; R is substituted or unsubstituted alkyl, alkenyl, carboxylate group; X is halide or sulfonate group; and 1?a?2, b?1, c?1, and b+c?5. Second precursor is at least one of an amine, a borane, a phosphine. Forming photoresist layer includes depositing photoresist material over the substrate. The photoresist layer is selectively exposed to actinic radiation to form latent pattern, and the latent pattern is developed by applying developer to selectively exposed photoresist layer to form pattern.
Type:
Grant
Filed:
January 15, 2021
Date of Patent:
April 8, 2025
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventors:
Chih-Cheng Liu, Yi-Chen Kuo, Jia-Lin Wei, Ming-Hui Weng, Yen-Yu Chen, Jr-Hung Li, Yahru Cheng, Chi-Ming Yang, Tze-Liang Lee, Ching-Yu Chang
