Abstract: The present disclosure provides an electronic module including a circuit including a transmitting part and a receiving part physically separated from the transmitting part. The electronic module also includes an element isolated from the circuit and configured to block electrical interference between the transmitting part and the receiving part.

Abstract: A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a semiconductor substrate, active devices and transparent conductive patterns. The active devices are formed on the semiconductor substrate. The transparent conductive patterns are formed over the active devices and electrically connected to the active devices. The transparent conductive patterns are made of a metal oxide material. The metal oxide material has a first crystalline phase with a prefer growth plane rich in oxygen vacancy, and has a second crystalline phase with a prefer growth plane poor in oxygen vacancy.

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate having a surface. The semiconductor device includes a conductive pad over a portion of the surface. The conductive pad has a curved top surface, and a width of the conductive pad increases toward the substrate. The semiconductor device includes a device over the conductive pad. The semiconductor device includes a solder layer between the device and the conductive pad. The solder layer covers the curved top surface of the conductive pad, and the conductive pad extends into the solder layer.

Abstract: A micro electro mechanical system (MEMS) includes a circuit substrate comprising electronic circuitry, a support substrate having a recess, a bonding layer disposed between the circuit substrate and the support substrate, through holes passing through the circuit substrate to the recess, a first conductive layer disposed on a front side of the circuit substrate, and a second conductive layer disposed on an inner wall of the recess. The first conductive layer extends into the through holes and the second conductive layer extends into the through holes and coupled to the first conductive layer.

Abstract: A display device manufacturing method and a display device manufacturing apparatus are provided. The method includes steps A to D. The step A includes forming a display device. The step B includes disposing the display device in a sealing chamber. The step C includes adding hydrogen gas into the sealing chamber such that hydrogen atoms in the hydrogen gas spread in an insulating layer. The step D includes heating the hydrogen gas and/or the display device in sealing chamber such that the hydrogen atoms in insulating layer spread in the semiconductor member. The present invention can enhance electrical performance of the semiconductor member.

Abstract: A method for manufacturing a polysilicon semiconductor layer, a thin film transistor, and a manufacturing method are provided. The method for manufacturing a polysilicon semiconductor layer includes the following steps. A predetermined gas is dissociated, and a low amount of first ions and a high amount of second ions are screened out. A heavily doped region is doped with the second ions. A lightly doped region is doped with the first ions. Annealing is further performed, so that a polysilicon semiconductor layer is formed from an amorphous silicon layer.

Abstract: A display device manufacturing method and a display device manufacturing apparatus are provided. The method includes steps A to D. The step A includes forming a display device. The step B includes disposing the display device in a sealing chamber. The step C includes adding hydrogen gas into the sealing chamber such that hydrogen atoms in the hydrogen gas spread in an insulating layer. The step D includes heating the hydrogen gas and/or the display device in sealing chamber such that the hydrogen atoms in insulating layer spread in the semiconductor member. The present invention can enhance electrical performance of the semiconductor member.

Abstract: A method for manufacturing a polysilicon semiconductor layer, a thin film transistor, and a manufacturing method are provided. The method for manufacturing a polysilicon semiconductor layer includes the following steps. A predetermined gas is dissociated, and a low amount of first ions and a high amount of second ions are screened out. A heavily doped region is doped with the second ions. A lightly doped region is doped with the first ions. Annealing is further performed, so that a polysilicon semiconductor layer is formed from an amorphous silicon layer.

Abstract: A method for transforming an amorphous silicon layer into a polysilicon layer is disclosed. The method includes following steps: providing an amorphous silicon substrate, doping the amorphous silicon substrate with an inert gas atom, and increasing the temperature of the surface of the amorphous silicon substrate by heat treatment or thermal process.