Patents by Inventor Ming-Jeng Huang
Ming-Jeng Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20140166091Abstract: A photovoltaic device includes a substrate having a first doped-type, a first doped region having a second doped-type in the substrate, a second doped region in a portion of the first doped region and exposing the other portion of the first doped region, and a third doped region in the exposed portion of the first doped region. The polarity of the second doped-type is substantially reversed with that of the first doped-type. The second doped region has a polarity substantially identical to that of the first doped-type and a doped concentration substantially greater than that of the substrate. The third doped region has a polarity substantially identical to that of the second doped-type and a doped concentration substantially greater than that of the first doped region. The first doped-type is one of N-type and P-type, while the second doped-type is the other of P-type and N-type.Type: ApplicationFiled: February 24, 2014Publication date: June 19, 2014Applicant: AU Optronics CorporationInventors: MING-JENG HUANG, HAN-TU LIN
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Patent number: 8697986Abstract: The present invention, a photovoltaic device includes a substrate having a first doped-type, a first doped region having a second doped-type in the substrate, a second doped region in a portion of the first doped region and exposing the other portion of the first doped region, and a third doped region in the exposed portion of the first doped region. The polarity of the second doped-type is substantially reversed with that of the first doped-type. The second doped region has a polarity substantially identical to that of the first doped-type and a doped concentration substantially greater than that of the substrate. The third doped region has a polarity substantially identical to that of the second doped-type and a doped concentration substantially greater than that of the first doped region. The first doped-type is one of N-type and P-type, while the second doped-type is the other of P-type and N-type.Type: GrantFiled: March 1, 2011Date of Patent: April 15, 2014Assignee: Au Optronics CorporationInventors: Ming-Jeng Huang, Han-Tu Lin
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Publication number: 20140004652Abstract: A method of fabricating solar cell uses simplified processes to form a lightly-doped region having a textured surface and a heavily-doped region having a flat surface. A flat interface is formed between the heavily-doped region and an electrode, which has a relative lower contact resistance.Type: ApplicationFiled: June 17, 2013Publication date: January 2, 2014Inventors: Ming-Jeng Huang, Wen-Chin Lo, Chin-Tien Yang
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Publication number: 20120222729Abstract: The present invention, a photovoltaic device includes a substrate having a first doped-type, a first doped region having a second doped-type in the substrate, a second doped region in a portion of the first doped region and exposing the other portion of the first doped region, and a third doped region in the exposed portion of the first doped region. The polarity of the second doped-type is substantially reversed with that of the first doped-type. The second doped region has a polarity substantially identical to that of the first doped-type and a doped concentration substantially greater than that of the substrate. The third doped region has a polarity substantially identical to that of the second doped-type and a doped concentration substantially greater than that of the first doped region. The first doped-type is one of N-type and P-type, while the second doped-type is the other of P-type and N-type.Type: ApplicationFiled: March 1, 2011Publication date: September 6, 2012Applicant: AU OPTRONICS CORPORATIONInventors: Ming-Jeng Huang, Han-Tu Lin
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Publication number: 20120068147Abstract: A method for forming a phase change memory device is disclosed. A substrate with a bottom electrode thereon is provided. A heating electrode and a dielectric layer are formed on the bottom electrode, wherein the heating electrode is surrounded by the dielectric layer. The heating electrode is etched to form recess in the dielectric layer. A phase change material is deposited on the dielectric layer, filling into the recess. The phase change material is polished to remove a portion of the phase change material exceeding the surface of the dielectric layer and a phase change layer is formed confined in the recess of the dielectric layer. A top electrode is formed on the phase change layer and the dielectric layer.Type: ApplicationFiled: November 23, 2011Publication date: March 22, 2012Applicant: POWERCHIP SEMICONDUCTOR CORP.Inventors: Jen-Chi CHUANG, Ming-Jeng HUANG, Chien-Min LEE, Jia-Yo LIN, Min-Chih WANG
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Publication number: 20110312150Abstract: A phase change memory device is provided, including a substrate, a first dielectric layer disposed over the substrate, a first electrode disposed in the first dielectric layer, a second dielectric layer formed over the first dielectric layer, covering the first electrode, a heating electrode disposed in the second dielectric layer, contacting the first electrode, a phase change material layer disposed over the second dielectric layer, contacting the heating electrode, and a second electrode disposed over the phase change material layer. In one embodiment, the heating electrode includes a first portion contacting the first electrode and a second portion contacting the phase change material layer, and the second portion of the heating electrode includes metal silicides and the first portion of the heating electrode includes no metal silicides.Type: ApplicationFiled: August 26, 2011Publication date: December 22, 2011Applicant: POWERCHIP SEMICONDUCTOR CORP.Inventors: Chien-Min Lee, Ming-Jeng Huang, Jen-Chi Chuang, Jia-Yo Lin, Min-Chih Wang
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Patent number: 7858961Abstract: An exemplary phase change memory device is provided, including a substrate with a first electrode formed thereover. A first dielectric layer is formed over the first electrode and the substrate. A plurality of cup-shaped heating electrodes is respectively disposed in a portion of the first dielectric layer. A first insulating layer is formed over the first dielectric layer, partially covering the cup-shaped heating electrodes and the first dielectric layer therebetween. A second insulating layer is formed over the first dielectric layer, partially covering the cup-shaped heating electrodes and the first dielectric layer therebetween. A pair of phase change material layers is respectively disposed on opposing sidewalls of the second insulating layer and contacting with one of the cup-shaped heating electrodes. A pair of first conductive layers is formed on the second insulating layer along the second direction, respectively.Type: GrantFiled: November 28, 2008Date of Patent: December 28, 2010Assignee: Industrial Technology Research InstituteInventors: Jen-Chi Chuang, Yung-Fa Lin, Ming-Jeng Huang
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Publication number: 20100213432Abstract: A method for forming a phase change memory device is disclosed. A substrate with a bottom electrode thereon is provided. A heating electrode and a dielectric layer are formed on the bottom electrode, wherein the heating electrode is surrounded by the dielectric layer. The heating electrode is etched to form recess in the dielectric layer. A phase change material is deposited on the dielectric layer, filling into the recess. The phase change material is polished to remove a portion of the phase change material exceeding the surface of the dielectric layer and a phase change layer is formed confined in the recess of the dielectric layer. A top electrode is formed on the phase change layer and the dielectric layer.Type: ApplicationFiled: May 19, 2009Publication date: August 26, 2010Applicants: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE, POWERCHIP SEMICONDUCTOR CORP., NANYA TECHNOLOGY CORPORATION, PROMOS TECHNOLOGIES INC., WINBOND ELECTRONICS CORP.Inventors: Jen-Chi Chuang, Ming-Jeng Huang, Chien-Min Lee, Jia-Yo Lin, Min-Chih Wang
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Publication number: 20100133495Abstract: A phase change memory device is provided, including a substrate, a first dielectric layer disposed over the substrate, a first electrode disposed in the first dielectric layer, a second dielectric layer formed over the first dielectric layer, covering the first electrode, a heating electrode disposed in the second dielectric layer, contacting the first electrode, a phase change material layer disposed over the second dielectric layer, contacting the heating electrode, and a second electrode disposed over the phase change material layer. In one embodiment, the heating electrode includes a first portion contacting the first electrode and a second portion contacting the phase change material layer, and the second portion of the heating electrode includes metal silicides and the first portion of the heating electrode includes no metal silicides.Type: ApplicationFiled: September 2, 2009Publication date: June 3, 2010Applicant: POWERCHIP SEMICONDUCTOR CORP.Inventors: Chien-Min Lee, Ming-Jeng Huang, Jen-Chi Chuang, Jia-Yo Lin, Min-Chih Wang
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Publication number: 20090294750Abstract: An exemplary phase change memory device is provided, including a substrate with a first electrode formed thereover. A first dielectric layer is formed over the first electrode and the substrate. A plurality of cup-shaped heating electrodes is respectively disposed in a portion of the first dielectric layer. A first insulating layer is formed over the first dielectric layer, partially covering the cup-shaped heating electrodes and the first dielectric layer therebetween. A second insulating layer is formed over the first dielectric layer, partially covering the cup-shaped heating electrodes and the first dielectric layer therebetween. A pair of phase change material layers is respectively disposed on opposing sidewalls of the second insulating layer and contacting with one of the cup-shaped heating electrodes. A pair of first conductive layers is formed on the second insulating layer along the second direction, respectively.Type: ApplicationFiled: November 28, 2008Publication date: December 3, 2009Applicants: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE, POWERCHIP SEMICONDUCTOR CORP., NANYA TECHNOLOGY CORPORATION, PROMOS TECHNOLOGIES INC., WINBOND ELECTRONICS CORP.Inventors: Jen-Chi Chuang, Yung-Fa Lin, Ming-Jeng Huang
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Publication number: 20090146127Abstract: Phase change memories comprising a top electrode, a phase change element, a plurality of via holes allocated between the top electrode and the phase change element, at least four heaters aiming at different regions of the phase change element, and a plurality of bottom electrodes and transistors corresponding to the heaters. The bottom electrodes are respectively coupled to the heaters. Regarding the transistors, their first terminals are respectively coupled to the bottom electrodes, their control terminals are used for coupling to word lines, and their second terminals are used for coupling to bit lines. In an embodiment with four heaters, the regions the heaters aimed at the phase change element form a 2×2 storage array.Type: ApplicationFiled: June 6, 2008Publication date: June 11, 2009Applicants: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE, POWERCHIP SEMICONDUCTOR CORP., NANYA TECHNOLOGY CORPORATION, PROMOS TECHNOLOGIES INC.., WINBOND ELECTRONICS CORP.Inventors: Ming-Jeng Huang, Yung-Fa Lin
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Patent number: 7411276Abstract: A photosensitive device having at least an insulator layer including a plurality of photoreceiving regions disposed on a substrate. A plurality of conductive patterns is disposed on the insulator layer without covering the photoreceiving regions. A flattened dielectric layer is disposed on the conductive patterns and the insulator layer, wherein a surface of the dielectric layer is higher than a surface of the conductive patterns in a range between 2000 ? to 4000 ?.Type: GrantFiled: September 1, 2006Date of Patent: August 12, 2008Assignee: Powerchip Semiconductor Corp.Inventors: Ming-Jeng Huang, Chen-Chiu Hsue
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Publication number: 20070004075Abstract: A photosensitive structure and method of fabricating the same. A substrate with at least an insulator layer formed thereon is provided. The insulator layer comprises a plurality of photoreceiving regions, and a plurality of conductive patterns are formed thereon without covering the photoreceiving regions. A dielectric layer is formed on the insulator and the conductive patterns, and polished by CMP.Type: ApplicationFiled: September 1, 2006Publication date: January 4, 2007Inventors: Ming-Jeng Huang, Chen-Chiu Hsue
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Patent number: 7125738Abstract: A method of fabrication of a photosensitive device is disclosed. A substrate with at least an insulator layer formed thereon is provided. The insulator layer comprises a plurality of photoreceiving regions, and a plurality of conductive patterns are formed thereon without covering the photoreceiving regions. A dielectric layer is formed on the insulator and the conductive patterns, and polished by CMP thereof. The dielectric layer comprises a first dielectric layer formed by PECVD and a second dielectric layer formed by HDPCVD.Type: GrantFiled: October 14, 2004Date of Patent: October 24, 2006Assignee: Powerchip Semiconductor Corp.Inventors: Ming-Jeng Huang, Chen-Chiu Hsue
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Publication number: 20060084194Abstract: A photosensitive structure and method of fabricating the same. A substrate with at least an insulator layer formed thereon is provided. The insulator layer comprises a plurality of photoreceiving regions, and a plurality of conductive patterns are formed thereon without covering the photoreceiving regions. A dielectric layer is formed on the insulator and the conductive patterns, and polished by CMP.Type: ApplicationFiled: October 14, 2004Publication date: April 20, 2006Inventors: Ming-Jeng Huang, Chen-Chiu Hsue