Abstract: A chemically-modified graphene includes a graphene layer and a plurality of functional groups that are grafted to the graphene layer and each of which is represented by —CO—R—COOH, wherein R is an optionally substituted C1-C5 alkylene group or an optionally substituted C1-C5 alkenylene group. A method for producing a chemically-modified grapheme includes subjecting a cyclic anhydride and graphite to a Friedel-Crafts reaction in the presence of a Lewis acid.

Abstract: A chemically-modified graphene includes a graphene layer and a plurality of functional groups that are grafted to the graphene layer and each of which is represented by —CO—R—COOH, wherein R is an optionally substituted C1-C5 alkylene group or an optionally substituted C1-C5 alkenylene group. A method for producing a chemically-modified grapheme includes subjecting a cyclic anhydride and graphite to a Friedel-Crafts reaction in the presence of a Lewis acid.

Abstract: An EMP protection circuit with a counter has a surge protection circuit capable of suppressing EMP, and also use an extra counting circuit for sensing light emission or variation of magnetic force of the surge protection circuit to count the action times of the surge protection circuit, thereby warning that the surge protection circuit has reached its time-limit of use and has to be replaced. In this way, various kinds of electronic products can be more perfectly protected to avoid higher loss.

Abstract: An EMP protection circuit with a counter has a surge protection circuit capable of suppressing EMP, and also use an extra counting circuit for sensing light emission or variation of magnetic force of the surge protection circuit to count the action times of the surge protection circuit, thereby warning that the surge protection circuit has reached its time-limit of use and has to be replaced. In this way, various kinds of electronic products can be more perfectly protected to avoid higher loss.

Abstract: The present invention relates to a method for forming a silicon dioxide layer on a silicon substrate, which is suitable for use as a thin-gate oxide. The method includes conducting an electrolytic reaction at a room temperature such that a silicon dioxide layer is formed on a silicon substrate acting as an anode, wherein pure water is used as an electrolyte of the electrolytic reaction. The silicon dioxide layer is further subjected with a rapid thermal densification carried out in an inert gas atmosphere and at a temperature of 700.degree.-1000.degree. C. for a period of time such that the silicon dioxide layer formed on said silicon substrate is densified.