Abstract: A metal nanoline process and applications on growth of aligned nanostructures thereof. A nano-structure is provided with a substrate with at least one nanodimensional metal catalyst line disposed thereon and at least one carbon nanotube or silicon nanowire extending along an end of the metal catalyst line.

Abstract: The present invention relates to a structure and manufacturing process of a nano device transistor for a biosensor. The structure, the manufacturing process and the related circuit for a carbon nano tube or nano wire transistor biosensor device are provided. The refurbished nano device is used for absorbing various anti-bodies so as to detect the specific antigens or absorbing various biotins. Therefore, the object of the present invention to detect the specific species for bio measurement can be achieved.

Abstract: The present invention generally relates to an apparatus and method of carbon nanotube (CNT) gate field effect transistor (FET), which is used to replace the current metal gate of transistor for decreasing the gate width greatly. The carbon nanotube has its own intrinsic characters of metal and semiconductor, so it can be the channel, connector or next-level gate of transistor. Furthermore, the transistor has the structure of exchangeable source and drain, and can be defined the specificity by outside wiring.

Abstract: A metal nanoline process and applications on growth of aligned nanostructures thereof. A nano-structure is provided with a substrate with at least one nanodimensional metal catalyst line disposed thereon and at least one carbon nanotube or silicon nanowire extending along an end of the metal catalyst line.

Abstract: The present invention relates to a structure and manufacturing process of a nano device transistor for a biosensor. The structure, the manufacturing process and the related circuit for a carbon nano tube or nano wire transistor biosensor device are provided. The refurbished nano device is used for absorbing various anti-bodies so as to detect the specific antigens or absorbing various biotins. Therefore, the object of the present invention to detect the specific species for bio measurement can be achieved.

Abstract: The present invention generally relates to an apparatus and method of carbon nanotube (CNT) gate field effect transistor (FET), which is used to replace the current metal gate of transistor for decreasing the gate width greatly. The carbon nanotube has its own intrinsic characters of metal and semiconductor, so it can be the channel, connector or next-level gate of transistor. Furthermore, the transistor has the structure of exchangeable source and drain, and can be defined the specificity by outside wiring.

Abstract: The present invention generally relates to an apparatus and method of carbon nanotube (CNT) gate field effect transistor (FET), which is used to replace the current metal gate of transistor for decreasing the gate width greatly. The carbon nanotube has its own intrinsic characters of metal and semiconductor, so it can be the channel, connector or next-level gate of transistor. Furthermore, the transistor has the structure of exchangeable source and drain, and can be defined the specificity by outside wiring.

Abstract: A manufacturing method of carbon nanotube transistors is disclosed. The steps include: forming an insulating layer on a substrate; forming a first oxide layer on the insulating layer using a solution with cobalt ion catalyst by spin-on-glass (SOG); forming a second oxide layer on the first oxide layer using a solution without the catalyst; forming a blind hole on the second oxide layer using photolithographic and etching processes, the blind hole exposing the first oxide layer, the sidewall of the second oxide layer, and the insulating layer; forming a single wall carbon nanotube (SWNT) connecting the first oxide layer separated by the blind hole and parallel to the substrate; and forming a source and a drain connecting to both ends of the SWNT, respectively.

Abstract: The present invention generally relates to an apparatus and method of carbon nanotube (CNT) gate field effect transistor (FET), which is used to replace the current metal gate of transistor for decreasing the gate width greatly. The carbon nanotube has its own intrinsic characters of metal and semiconductor, so it can be the channel, connector or next-level gate of transistor. Furthermore, the transistor has the structure of exchangeable source and drain, and can be defined the specificity by outside wiring.