Abstract: A method and system are provided for adjusting a write timing in a memory device. For instance, the method can include receiving a data signal, a write clock signal, and a reference signal. The method can also include detecting a phase shift in the reference signal over time. The phase shift of the reference signal can be used to adjust a phase difference between the data signal and the write clock signal, where the memory device recovers data from the data signal based on an adjusted write timing of the data signal and the write clock signal.

Abstract: A method is provided for selecting at least one of a plurality of slew rate control settings based at least upon a speed of data transmission and receiving input data where the input data is received at the data transmission speed. The method also includes switching the received input data in accordance with the selected at least one of a plurality of slew rate control settings and sending output data at the data transmission speed. Also provided is data driver device that includes at least one activation portion comprising one or more slew rate controls, a voltage-mode driver portion and at least a first current-mode driver portion. Also provided is a computer readable storage device encoded with data for adapting a manufacturing facility to create the data driver device. Also provided is a system including the data driver device, a data storage device and a processor device.

Abstract: A method, system, and computer program product are provided for adjusting write timing in a memory device based on results of an error detection function. For instance, the method can include determining a write timing window between a signal on a data bus and a write clock signal based on the results of the error detection function. The method can also include adjusting a phase difference between the signal on the data bus and the write clock signal based on the write timing window. The memory device can recover data on the data bus based on the adjusted phase difference.

Abstract: A method and system are provided for adjusting a write timing in a memory device. For instance, the method can include receiving a data signal, a write clock signal, and a reference signal. The method can also include detecting a phase shift in the reference signal over time. The phase shift of the reference signal can be used to adjust a phase difference between the data signal and the write clock signal, where the memory device recovers data from the data signal based on an adjusted write timing of the data signal and the write clock signal.

Abstract: A method and system are provided for adjusting a write timing in a memory device. For instance, the method can include receiving a data signal, a write clock signal, and a reference signal. The method can also include detecting a phase shift in the reference signal over time. The phase shift of the reference signal can be used to adjust a phase difference between the data signal and the write clock signal, where the memory device recovers data from the data signal based on an adjusted write timing of the data signal and the write clock signal.

Abstract: A method is provided for selecting at least one of a plurality of slew rate control settings based at least upon a speed of data transmission and receiving input data where the input data is received at the data transmission speed. The method also includes switching the received input data in accordance with the selected at least one of a plurality of slew rate control settings and sending output data at the data transmission speed. Also provided is data driver device that includes at least one activation portion comprising one or more slew rate controls, a voltage-mode driver portion and at least a first current-mode driver portion. Also provided is a computer readable storage device encoded with data for adapting a manufacturing facility to create the data driver device. Also provided is a system including the data driver device, a data storage device and a processor device.

Abstract: A method, system, and computer program product are provided for adjusting write timing in a memory device based on a training signal. For instance, the method can include configuring the memory device in a training mode of operation. The method can also include determining a write timing window between a signal on a data bus and a write clock signal based on the training signal. Further, the method includes adjusting a phase difference between the signal on the data bus and the write clock signal based on the write timing window. The memory device can recover data on the data bus based on the adjusted phase difference.

Abstract: A circuit includes a complementary current mode logic driver circuit and a dual feedback current mode logic bias circuit. The complementary current mode logic driver circuit provides a first output voltage and a second output voltage. The dual feedback current mode logic bias circuit includes a first feedback circuit and a second feedback circuit. The first feedback circuit provides a first bias voltage for the complementary current mode logic driver circuit in response to the first output voltage. The second feedback circuit provides a second bias voltage in response to the second output voltage.

Abstract: A method is provided for selecting at least one of a plurality of slew rate control settings based at least upon a speed of data transmission and receiving input data where the input data is received at the data transmission speed. The method also includes switching the received input data in accordance with the selected at least one of a plurality of slew rate control settings and sending output data at the data transmission speed. Also provided is data driver device that includes at least one activation portion comprising one or more slew rate controls, a voltage-mode driver portion and at least a first current-mode driver portion. Also provided is a computer readable storage device encoded with data for adapting a manufacturing facility to create the data driver device. Also provided is a system including the data driver device, a data storage device and a processor device.

Abstract: A method, system, and computer program product are provided for adjusting write timing in a memory device based on a command protocol. For instance, the method can include enabling a write clock data recovery (WCDR) mode of operation. The method can also include transmitting WCDR data from a processing unit to the memory device during the WCDR mode of operation and another mode of operation of the memory device. Based on a phase shift in the WCDR data, a phase difference between a signal on a data bus and a write clock signal can be adjusted. Further, the method can include transmitting the signal on the data bus based on the adjusted phase difference between the signal on the data bus and the write clock signal.

Abstract: Embodiments described herein include a method and system for synchronizing clocks between coupled integrated circuits (ICs) in a computer system. According to an embodiment, a dedicated timing pin is provided on a first IC. The first IC configures a second IC to change a pin assignment, so that the second IC interprets a signal sent on the timing pin by the first IC and received on the reassigned pin as a request to transmit a return signal. The return signal is received on the timing pin. The return signal is used to determine whether timing should be adjusted by the first IC. In an embodiment a clock and data recover (CDR) circuit compares the signal sent to the signal received in order to make the determination. In an embodiment the first IC is a processor-based device, and the second IC is a memory device controlled by the first device.

Abstract: A method is provided for selecting at least one of a plurality of slew rate control settings based at least upon a speed of data transmission and receiving input data where the input data is received at the data transmission speed. The method also includes switching the received input data in accordance with the selected at least one of a plurality of slew rate control settings and sending output data at the data transmission speed. Also provided is data driver device that includes at least one activation portion comprising one or more slew rate controls, a voltage-mode driver portion and at least a first current-mode driver portion. Also provided is a computer readable storage device encoded with data for adapting a manufacturing facility to create the data driver device. Also provided is a system including the data driver device, a data storage device and a processor device.

Abstract: Embodiments described herein include a method and system for synchronizing clocks between coupled integrated circuits (ICs) in a computer system. According to an embodiment, a dedicated timing pin is provided on a first IC. The first IC configures a second IC to change a pin assignment, so that the second IC interprets a signal sent on the timing pin by the first IC and received on the reassigned pin as a request to transmit a return signal. The return signal is received on the timing pin. The return signal is used to determine whether timing should be adjusted by the first IC. In an embodiment a clock and data recover (CDR) circuit compares the signal sent to the signal received in order to make the determination. In an embodiment the first IC is a processor-based device, and the second IC is a memory device controlled by the first device.

Abstract: Embodiments described herein include a method and system for synchronizing clocks between coupled integrated circuits (ICs) in a computer system. According to an embodiment, a dedicated timing pin is provided on a first IC. The first IC configures a second IC to change a pin assignment, so that the second IC interprets a signal sent on the timing pin by the first IC and received on the reassigned pin as a request to transmit a return signal. The return signal is received on the timing pin. The return signal is used to determine whether timing should be adjusted by the first IC. In an embodiment a clock and data recover (CDR) circuit compares the signal sent to the signal received in order to make the determination. In an embodiment the first IC is a processor-based device, and the second IC is a memory device controlled by the first device.

Abstract: A dual function differential driver includes a voltage mode differential driver portion and a current mode differential driver portion. Control circuitry is connected to the voltage mode differential driver portion and the current mode differential driver portion. The control circuitry switches the dual function differential driver between operation as a voltage mode differential driver and operation as a current mode differential driver.

Abstract: Embodiments of an IC protection circuit that protects low voltage supply transistors and circuits within the IC from excessive power supply levels and ESD events are described. A protection circuit situated between the IO pins of the IC and the internal circuitry of the IC includes a voltage drop network and a plurality of shunt circuits to protect the IC against excessive supply voltages and ESD voltages, or other excessive current conditions. Each shunt circuit includes an RC trigger stage and an NMOS shunt stage that are made using low-voltage devices. A protection circuit of the embodiments includes a high voltage IO pin, a voltage drop network to drop a high voltage on the IO pin to a low voltage level on a floating voltage rail, a first shunt circuit coupled between the floating supply rail and ground, an equalizer circuit coupled between the floating supply rail and a low voltage supply rail, and a second shunt circuit coupled to the equalizer circuit through the low voltage supply rail.

Abstract: Embodiments of an IC protection circuit that protects low voltage supply transistors and circuits within the IC from excessive power supply levels and ESD events are described. A protection circuit situated between the IO pins of the IC and the internal circuitry of the IC includes a voltage drop network and a plurality of shunt circuits to protect the IC against excessive supply voltages and ESD voltages. Each shunt circuit includes an RC trigger stage and an NMOS shunt stage that are made using low-voltage devices.

Abstract: A method, system, and computer program product are provided for adjusting write timing in a memory device based on a command protocol. For instance, the method can include enabling a write clock data recovery (WCDR) mode of operation. The method can also include transmitting WCDR data from a processing unit to the memory device during the WCDR mode of operation and another mode of operation of the memory device. Based on a phase shift in the WCDR data, a phase difference between a signal on a data bus and a write clock signal can be adjusted. Further, the method can include transmitting the signal on the data bus based on the adjusted phase difference between the signal on the data bus and the write clock signal.

Abstract: A method, system, and computer program product are provided for adjusting write timing in a memory device based on results of an error detection function. For instance, the method can include determining a write timing window between a signal on a data bus and a write clock signal based on the results of the error detection function. The method can also include adjusting a phase difference between the signal on the data bus and the write clock signal based on the write timing window. The memory device can recover data on the data bus based on the adjusted phase difference.

Abstract: A method, system, and computer program product are provided for adjusting write timing in a memory device based on a training signal. For instance, the method can include configuring the memory device in a training mode of operation. The method can also include determining a write timing window between a signal on a data bus and a write clock signal based on the training signal. Further, the method includes adjusting a phase difference between the signal on the data bus and the write clock signal based on the write timing window. The memory device can recover data on the data bus based on the adjusted phase difference.