Patents by Inventor Ming-Jyh Hwu

Ming-Jyh Hwu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • III-V semiconductor structure and its producing method
    Patent number: 6200885
    Abstract: A III-V semiconductor structure and it producing method is provided. The method for forming a III-V semiconductor structure having a Schottky barrier layer includes the steps of (a) providing a III-V substrate, (b) treating the first barrier layer with a sulfuric acid solution, (c) forming a Schottky barrier layer on the III-V substrate, and (d) forming a metal layer on the second barrier layer. The Ill-V semiconductor structure includes a III-V substrate, a Schottky barrier layer, and a metal layer. The Schottky barrier layer is made of Al2(SO4)3 and In2(SO4)3.
    Type: Grant
    Filed: February 9, 1999
    Date of Patent: March 13, 2001
    Assignee: National Science Council
    Inventors: Hung-Tsung Wang, Ming-Jyh Hwu, Yao-Hwa Wu, Liann-Be Chang