Abstract: A vehicle power management system and a power management method thereof are provided. The power management method includes: determining, by a microcontroller, whether or not a voltage of an ignition-off signal is less than a voltage threshold when the microcontroller receives the ignition-off signal; stopping a vehicle power supply from charging a backup battery, and using the vehicle power supply to charge a back-end load; activating a counter of the microcontroller; stopping the vehicle power supply from charging the back-end load, and using the backup battery to charge the back-end load when a counting time of the counter reaches a first time threshold; sending, by the microcontroller, the ignition-off signal to the back-end load when the counting time of the counter reaches a second time threshold; and stopping the backup battery from charging the back-end load when the counting time of the counter reaches a third time threshold.

Abstract: A chassis quick release device includes a housing including a base with a connected sliding channel and accommodating space therein and a cover assembled with the base, a locking block linearly movably set in the accommodating space, and an operating handle having a rod body positioned on the sliding channel and a grip assembled with the rod body. The rod body has a cylindrical joint that corresponds to the grip and has a shaft groove defined therein. The grip is provided with a sleeve corresponding to the cylindrical joint and defining therein an accommodating cavity. Moving the operating handle in the direction of the housing causes the locking block to slide out from the accommodating space to form a locked state. Pulling the operating handle away from the housing causes the locking block to move linearly in a second direction to form an unlocked state.

Abstract: A single wafer spin cleaning apparatus with soaking, cleaning, and etching functions in accordance with the present invention includes a spin driver device, a wafer spin chuck, and a wafer support disk. The wafer spin chuck is driven by the spin driver device to spin. The wafer support disk is annular and surrounds the wafer spin chuck, can act relative to the wafer spin chuck to a wafer support position or a wafer disengagement position, and includes a soaking trough. The wafer support disk at the wafer support position can support a wafer such that the wafer is soaked in processing liquid injected in the soaking trough for implementing a high efficient cleaning or etching process.

Abstract: An ammonium fluoride gas may be used to form a protection layer for one or more interlayer dielectric layers, one or more insulating caps, and/or one or more source/drain regions of a semiconductor device during a pre-clean etch process. The protection layer can be formed through an oversupply of nitrogen trifluoride during the pre-clean etch process. The oversupply of nitrogen trifluoride causes an increased formation of ammonium fluoride, which coats the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) with a thick protection layer. The protection layer protects the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) during the pre-clean process from being etched by fluorine ions formed during the pre-clean process.

Abstract: A chassis quick release device includes a housing including a base provided with a sliding channel, a compression space, and accommodating space, a rotating space and a shaft in the rotating space and covered with a cover, a locking block linearly movably set in the accommodating space and providing a guide groove, a guide chamber, a receiving groove and an elastic member set in the receiving groove, a locking member having a shaft hole coupled to the shaft, a rotary reset member positioned on the shaft, resisting edge located at one end thereof that can rotate and protrude from the housing and a locking edge located at the other end thereof, and an operating handle including a rod body positioned in the sliding channel, the guide groove and the guide chamber and mounted with a grp and having a locking portion stopped against the guide chamber.

Abstract: An ammonium fluoride gas may be used to form a protection layer for one or more interlayer dielectric layers, one or more insulating caps, and/or one or more source/drain regions of a semiconductor device during a pre-clean etch process. The protection layer can be formed through an oversupply of nitrogen trifluoride during the pre-clean etch process. The oversupply of nitrogen trifluoride causes an increased formation of ammonium fluoride, which coats the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) with a thick protection layer. The protection layer protects the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) during the pre-clean process from being etched by fluorine ions formed during the pre-clean process.

Abstract: A method and a circuit for resolving the out-of-phase problem between a color burst signal and a sub-carrier signal of a television system. A delay means is used which leads to the synchronization of the color burst signal and the sub-carrier signal such that a subsequent color demodulator can demodulate correct color signals. Therefore, the locking of the two signals will be fastened without any excessively large circuit hardware.

Abstract: A method and a circuit for resolving the out-of-phase problem between a color burst signal and a sub-carrier signal of a television system. A delay means is used which leads to the synchronization of the color burst signal and the sub-carrier signal such that a subsequent color demodulator can demodulate correct color signals. Therefore, the locking of the two signals will be fastened without any excessively large circuit hardware.