Patents by Inventor Ming Kuei Tseng
Ming Kuei Tseng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 12087561Abstract: A processing chamber such as a plasma etch chamber can perform deposition and etch operations, where byproducts of the deposition and etch operations can build up in a vacuum pump system fluidly coupled to the processing chamber. A vacuum pump system may have multiple roughing pumps so that etch gases can be diverted a roughing pump and deposition precursors can be diverted to another roughing pump. A divert line may route unused deposition precursors through a separate roughing pump. Deposition byproducts can be prevented from forming by incorporating one or more gas ejectors or venturi pumps at an outlet of a primary pump in a vacuum pump system. Cleaning operations, such as waferless automated cleaning operations, using certain clean chemistries may remove deposition byproducts before or after etch operations.Type: GrantFiled: June 6, 2023Date of Patent: September 10, 2024Assignee: Lam Research CorporationInventors: John Stephen Drewery, Tom A. Kamp, Haoquan Yan, John Edward Daugherty, Ali Sucipto Tan, Ming-Kuei Tseng, Bruce Edmund Freeman
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Patent number: 12062151Abstract: An image processing circuit performs super-resolution (SR) operations. The image processing circuit includes memory to store multiple parameter sets of multiple artificial intelligence (AI) models. The image processing circuit further includes an image guidance module, a parameter decision module, and an SR engine. The image guidance module operates to detect a representative feature in an image sequence including a current frame and past frames within a time window. The parameter decision module operates to adjust parameters of one or more AI models based on a measurement of the representative feature. The SR engine operates to process the current frame using the one or more AI models with the adjusted parameters to thereby generate a high-resolution image for display.Type: GrantFiled: December 10, 2020Date of Patent: August 13, 2024Assignee: MediaTek Inc.Inventors: Ming-En Shih, Ping-Yuan Tsai, Yu-Cheng Tseng, Kuo-Chen Huang, Kuo-Chiang Lo, Hsin-Min Peng, Chun Hsien Wu, Pei-Kuei Tsung, Tung-Chien Chen, Yao-Sheng Wang, Cheng Lung Jen, Chih-Wei Chen, Chih-Wen Goo, Yu-Sheng Lin, Tsu Jui Hsu
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Publication number: 20230317437Abstract: A processing chamber such as a plasma etch chamber can perform deposition and etch operations, where byproducts of the deposition and etch operations can build up in a vacuum pump system fluidly coupled to the processing chamber. A vacuum pump system may have multiple roughing pumps so that etch gases can be diverted a roughing pump and deposition precursors can be diverted to another roughing pump. A divert line may route unused deposition precursors through a separate roughing pump. Deposition byproducts can be prevented from forming by incorporating one or more gas ejectors or venturi pumps at an outlet of a primary pump in a vacuum pump system. Cleaning operations, such as waferless automated cleaning operations, using certain clean chemistries may remove deposition byproducts before or after etch operations.Type: ApplicationFiled: June 6, 2023Publication date: October 5, 2023Inventors: John Stephen DREWERY, Tom A. KAMP, Haoquan YAN, John Edward DAUGHERTY, Ali Sucipto TAN, Ming-Kuei TSENG, Bruce Edmund FREEMAN
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Patent number: 11710623Abstract: A processing chamber such as a plasma etch chamber can perform deposition and etch operations, where byproducts of the deposition and etch operations can build up in a vacuum pump system fluidly coupled to the processing chamber. A vacuum pump system may have multiple roughing pumps so that etch gases can be diverted a roughing pump and deposition precursors can be diverted to another roughing pump. A divert line may route unused deposition precursors through a separate roughing pump. Deposition byproducts can be prevented from forming by incorporating one or more gas ejectors or venturi pumps at an outlet of a primary pump in a vacuum pump system. Cleaning operations, such as waferless automated cleaning operations, using certain clean chemistries may remove deposition byproducts before or after etch operations.Type: GrantFiled: May 7, 2021Date of Patent: July 25, 2023Assignee: Lam Research CorporationInventors: John Stephen Drewery, Tom A. Kamp, Haoquan Yan, John Edward Daugherty, Ali Sucipto Tan, Ming-Kuei Tseng, Bruce Freeman
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Publication number: 20210257195Abstract: A processing chamber such as a plasma etch chamber can perform deposition and etch operations, where byproducts of the deposition and etch operations can build up in a vacuum pump system fluidly coupled to the processing chamber. A vacuum pump system may have multiple roughing pumps so that etch gases can be diverted a roughing pump and deposition precursors can be diverted to another roughing pump. A divert line may route unused deposition precursors through a separate roughing pump. Deposition byproducts can be prevented from forming by incorporating one or more gas ejectors or venturi pumps at an outlet of a primary pump in a vacuum pump system. Cleaning operations, such as waferless automated cleaning operations, using certain clean chemistries may remove deposition byproducts before or after etch operations.Type: ApplicationFiled: May 7, 2021Publication date: August 19, 2021Inventors: John Stephen DREWERY, Tom A. KAMP, Haoquan YAN, John Edward DAUGHERTY, Ali Sucipto TAN, Ming-Kuei TSENG, Bruce FREEMAN
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Patent number: 11031215Abstract: A processing chamber such as a plasma etch chamber can perform deposition and etch operations, where byproducts of the deposition and etch operations can build up in a vacuum pump system fluidly coupled to the processing chamber. A vacuum pump system may have multiple roughing pumps so that etch gases can be diverted a roughing pump and deposition precursors can be diverted to another roughing pump. A divert line may route unused deposition precursors through a separate roughing pump. Deposition byproducts can be prevented from forming by incorporating one or more gas ejectors or venturi pumps at an outlet of a primary pump in a vacuum pump system. Cleaning operations, such as waferless automated cleaning operations, using certain clean chemistries may remove deposition byproducts before or after etch operations.Type: GrantFiled: September 26, 2019Date of Patent: June 8, 2021Assignee: Lam Research CorporationInventors: John Stephen Drewery, Tom A. Kamp, Haoquan Yan, John Edward Daugherty, Ali Sucipto Tan, Ming-Kuei Tseng, Bruce Edmund Freeman
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Publication number: 20200105509Abstract: A processing chamber such as a plasma etch chamber can perform deposition and etch operations, where byproducts of the deposition and etch operations can build up in a vacuum pump system fluidly coupled to the processing chamber. A vacuum pump system may have multiple roughing pumps so that etch gases can be diverted a roughing pump and deposition precursors can be diverted to another roughing pump. A divert line may route unused deposition precursors through a separate roughing pump. Deposition byproducts can be prevented from forming by incorporating one or more gas ejectors or venturi pumps at an outlet of a primary pump in a vacuum pump system. Cleaning operations, such as waferless automated cleaning operations, using certain clean chemistries may remove deposition byproducts before or after etch operations.Type: ApplicationFiled: September 26, 2019Publication date: April 2, 2020Inventors: John Stephen Drewery, Tom A. Kamp, Haoquan Yan, John Edward Daugherty, Ali Sucipto Tan, Ming-Kuei Tseng, Bruce Edmund Freeman
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Patent number: 7934979Abstract: A retaining ring has a generally annular body with a top surface, a bottom surface, an inner diameter surface, and an outer diameter surface. The outer diameter surface includes an outwardly projecting flange having a lower surface, and the bottom surface includes a plurality of channels.Type: GrantFiled: January 14, 2010Date of Patent: May 3, 2011Assignee: Applied Materials, Inc.Inventors: Dan A. Marohl, Ming-Kuei Tseng
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Publication number: 20100112914Abstract: A retaining ring has a generally annular body with a top surface, a bottom surface, an inner diameter surface, and an outer diameter surface. The outer diameter surface includes an outwardly projecting flange having a lower surface, and the bottom surface includes a plurality of channels.Type: ApplicationFiled: January 14, 2010Publication date: May 6, 2010Inventors: Dan A. Marohl, Ming-Kuei Tseng
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Patent number: 7677958Abstract: A retaining ring has a generally annular body with a top surface, a bottom surface, an inner diameter surface, and an outer diameter surface. The outer diameter surface includes an outwardly projecting flange having a lower surface, and the bottom surface includes a plurality of channels.Type: GrantFiled: August 17, 2006Date of Patent: March 16, 2010Assignee: Applied Materials, Inc.Inventors: Dan A. Marohl, Ming-Kuei Tseng
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Patent number: 7678245Abstract: Embodiments of the invention generally provide a method and apparatus for processing a substrate in an electrochemical mechanical planarizing system. In one embodiment, a cell for polishing a substrate includes a processing pad disposed on a top surface of a platen assembly. A plurality of conductive elements are arranged in a spaced-apart relation across the upper planarizing surface and adapted to bias the substrate relative to an electrode disposed between the pad and the platen assembly. A plurality of passages are formed through the platen assembly between the top surface and a plenum defined within the platen assembly. In another embodiment, a system is provided having a bulk processing cell and a residual processing cell. The residual processing cell includes a biased conductive planarizing surface. In further embodiments, the conductive element is protected from attack by process chemistries.Type: GrantFiled: June 30, 2004Date of Patent: March 16, 2010Assignee: Applied Materials, Inc.Inventors: Yan Wang, Siew Neo, Feng Liu, Stan D. Tsai, Yongqi Hu, Alain Duboust, Antoine Manens, Ralph M. Wadensweiler, Rashid Mavliev, Liang-Yuh Chen, Donald J. K. Olgado, Paul D. Butterfield, Ming-Kuei Tseng, Shou-Sung Chang, Lizhong Sun
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Publication number: 20080006650Abstract: A method of operating a multi-chamber module including a first chamber, a second chamber, and a dispense arm area positioned between the first chamber and the second chamber. The method includes flowing a process gas into the first chamber, the second chamber, and the dispense arm area. The method also includes exhausting a first gas from the first chamber using a first exhaust path in fluid communication with a shared exhaust, exhausting a second gas from the second chamber using a second exhaust path in fluid communication with the shared exhaust, and exhausting a third gas from the dispense arm area using a dispense arm area exhaust in fluid communication with the shared exhaust.Type: ApplicationFiled: June 27, 2006Publication date: January 10, 2008Applicant: Applied Materials, Inc.Inventors: Ming-Kuei Tseng, Natarajan Ramanan, Tetsuya Ishikawa, Sudhir R. Gondhalekar
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Publication number: 20070295268Abstract: An apparatus for maintaining constant exhaust flow during processing of a semiconductor substrate is provided. For example, the apparatus may include an inlet and an outlet. The apparatus may also include a throttle valve stage coupled to the inlet. The throttle valve stage may include a throttle valve plug located within the throttle valve stage. The throttle valve plug is configured to control the amount of airflow through the throttle valve stage by modulating the distance between the throttle valve plug and faces of the throttle valve stage. The apparatus may further include a floating plunger stage coupled to the throttle valve stage. The floating plunger stage additionally includes a floating plunger. A surface of the floating plunger receives a controlled pressure which allows the floating plunger to move and vary an opening between the floating plunger and the outlet. Furthermore, the apparatus includes a guide pin.Type: ApplicationFiled: June 27, 2006Publication date: December 27, 2007Applicant: Applied Materials, Inc.Inventor: Ming-Kuei Tseng
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Publication number: 20070295269Abstract: A method and apparatus for maintaining constant exhaust flow during processing of a semiconductor substrate is provided. For example, the apparatus may include an inlet and an outlet. Furthermore, the apparatus may include a throttle valve stage coupled to the inlet. The throttle valve stage includes a throttle valve plug located within the throttle valve stage. The throttle valve plug is configured to control the amount of airflow through the throttle valve stage by modulating the distance between the throttle valve plug and faces of the throttle valve stage. The apparatus further includes a floating plunger stage coupled to the throttle valve stage. The floating plunger stage includes a floating plunger coupled to a flexible attachment. The flexible attachment allows the floating plunger to move in a controlled manner to vary an opening between the floating plunger and the outlet.Type: ApplicationFiled: June 27, 2006Publication date: December 27, 2007Applicant: Applied Materials, Inc.Inventor: Ming-Kuei Tseng
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Publication number: 20070294870Abstract: A multi-stage flow control apparatus for use during the processing of a semiconductor substrate is provided. The multi-stage flow control apparatus includes a first inlet and a second inlet, an outlet, and a first throttle valve stage coupled to the first inlet. The first throttle valve stage includes a first throttle valve plug located within the first throttle valve stage. The first throttle valve plug is configured to control the amount of airflow through the first throttle valve stage by modulating the distance between the first throttle valve plug and faces of the first throttle valve stage. The multi-stage flow control apparatus further includes a second throttle valve stage coupled to the second inlet. The second throttle valve stage includes a second throttle valve plug located within the second throttle valve stage.Type: ApplicationFiled: June 27, 2006Publication date: December 27, 2007Applicant: Applied Materials, Inc.Inventors: Ming-Kuei Tseng, Kim Vellore
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Publication number: 20070131562Abstract: The embodiments of the invention generally relate to a method and apparatus for processing a substrate with reduced fluid consumption. Embodiments of the invention may be beneficially utilized in chemical mechanical and electrochemical mechanical polishing processes, among other processes where conservation of a processing fluid disposed on a rotating pad is desirable. In one embodiment, a processing fluid delivery arm assembly is provided that includes a nozzle assembly supported at a distal end of an arm. The nozzle assembly includes a nozzle that is adjustable to control the delivery of fluid exiting therefrom in two planes relative to the arm. In another embodiment, processing fluid in the form of electrolyte fills holes formed at least partially through the pad as they enter the wet zone, and a current is driven through the electrolyte, filling the holes between a substrate and an electrode disposed below the surface of the pad.Type: ApplicationFiled: December 8, 2005Publication date: June 14, 2007Inventors: Zhihong Wang, Ming-Kuei Tseng, Yuan Tian, Yongqi Hu, Stan Tsai
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Publication number: 20060281395Abstract: A retaining ring has a generally annular body with a top surface, a bottom surface, an inner diameter surface, and an outer diameter surface. The outer diameter surface includes an outwardly projecting flange having a lower surface, and the bottom surface includes a plurality of channels.Type: ApplicationFiled: August 17, 2006Publication date: December 14, 2006Inventors: Dan Marohl, Ming-Kuei Tseng
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Patent number: 7134948Abstract: A retaining ring having a bottom portion that is removable from the ring's upper portion is described. The upper and lower portions of the retaining ring include one or more magnetic bodies and/or one or more bodies formed of a material that is attracted to magnets.Type: GrantFiled: December 21, 2005Date of Patent: November 14, 2006Assignee: Applied Materials, Inc.Inventors: Ming-Kuei Tseng, Ralph M. Wadensweiler
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Patent number: 7101273Abstract: A carrier head includes a housing connectable to a drive shaft to rotate therewith, a lower assembly having a substrate mounting surface, and a gimbal mechanism that connects the housing to the lower assembly to permit the lower assembly to pivot with respect to the housing about an axis substantially parallel to the polishing surface. The gimbal mechanism includes a shaft having an upper end slidably disposed in a vertical passage in a vertical passage in the housing, and a lower member that connects a lower end of the shaft to the lower assembly. The lower member bends to permit the base to pivot with respect to the housing. The shaft and the lower member are a unitary body.Type: GrantFiled: September 28, 2005Date of Patent: September 5, 2006Assignee: Applied Materials, Inc.Inventors: Ming-Kuei Tseng, Steven M. Zuniga
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Patent number: 7094139Abstract: A retaining ring has a generally annular body with a top surface, a bottom surface, an inner diameter surface, and an outer diameter surface. The outer diameter surface includes an outwardly projecting flange having a lower surface, and the bottom surface includes a plurality of channels.Type: GrantFiled: September 8, 2003Date of Patent: August 22, 2006Assignee: Applied Materials, Inc.Inventors: Dan A. Marohl, Ming-Kuei Tseng