Abstract: A method of manufacturing a semiconductor device includes at least the following steps. A protrusion is formed in a substrate by an anisotropic etch process, wherein a sidewall of the protrusion is inclined. A recess is formed on the sidewall of the protrusion by an isotropic etch process, wherein during the isotropic etch process, a by-product covers a first portion of the sidewall of the protrusion while exposing a second portion of the sidewall of the protrusion, so that the recess is formed between the first portion and the second portion of the sidewall.

Abstract: The present disclosure provides a wafer chuck including a substrate and a heating/cooling wafer. The substrate includes a first surface facing a wafer to be carried and a second surface opposite to the first surface. The heating/cooling wafer is disposed on the first surface of the substrate and includes a plurality of heating/cooling units arranged in an array. In a direction perpendicular to the first surface, the positions of the heating/cooling units and the positions of a plurality of dies included in the wafer to be carried are corresponded with each other, and the heating/cooling units can heat or cool the corresponding dies individually.

Abstract: The present disclosure provides a semiconductor structure, including a memory region, a logic region adjacent to the memory region, a first magnetic tunneling junction (MTJ) cell and a second MTJ cell over the memory region, and a carbon-based layer over the memory region, wherein the carbon-based layer includes a recess between the first MTJ cell and the second MTJ cell.

Abstract: A light emitting device is provided and includes a first substrate, a light blocking element disposed on the first substrate, and a plurality of light emitting diodes. The light blocking element has a first opening, a second opening, and a third opening, wherein the first opening is adjacent to the second opening, the third opening is adjacent to the first opening, and the first opening and the second opening have different areas. One of the light emitting diodes is overlapped with the third opening. The first opening and the second opening are not overlapped with the plurality of light emitting diodes in a normal direction of a surface of the first substrate.

Abstract: A method includes forming a semiconductor substrate, forming hard mask layers (HMs) over the semiconductor substrate, forming first mandrels over the HMs, forming second mandrels along sidewalls of the first mandrels, forming a protective layer over the first mandrels and the second mandrels, removing a portion of the protective layer to expose portions of the first and the second mandrels, removing the exposed portions of the second mandrels with respect to the exposed portions of the first mandrels, removing remaining portions of the protective layer to expose remaining portions of the first and second mandrels, where the exposed portions of the first mandrels and the remaining portions of the first and second mandrels form a mandrel structure, patterning the HMs using the mandrel structure as an etching mask, and patterning the semiconductor substrate to form a fin structure using the patterned HMs as an etching mask.

Abstract: A light-emitting unit is provided. The light-emitting unit includes a light-emitting element, a light conversion layer, and a wall. The light conversion layer is disposed on the light-emitting element. The wall covers a sidewall of the light conversion layer and extends to a portion of an upper surface of the light conversion layer.

Abstract: A system for bonding films includes a first film, a second film having a plurality of elements, a bonding roller, and a deformable roller having a deformable outer layer. The stiffness of the second film is less than that of the first film. By using the system, the deformable outer layer of the deformable roller produces enough deformation during bonding films to fill the area not covered by the plurality of elements on the second film. Therefore, the second film without sufficient stiffness and the first film can be bonded with each other to produce a composite film without wrinkles. A method for preparing a composite film using the system is also disclosed.

Abstract: A first layer is formed over a substrate; a second layer is formed over the first layer; and a third layer is formed over the second layer. The first and third layers each have a first semiconductor element; the second layer has a second semiconductor element different from the first semiconductor element. The second layer has the second semiconductor element at a first concentration in a first region and at a second concentration in a second region of the second layer. A source/drain trench is formed in a region of the stack to expose side surfaces of the layers. A first portion of the second layer is removed from the exposed side surface to form a gap between the first and the third layers. A spacer is formed in the gap. A source/drain feature is formed in the source/drain trench and on a sidewall of the spacer.

Abstract: The present disclosure provides a method of making a semiconductor device. The method includes forming a semiconductor stack on a substrate, wherein the semiconductor stack includes first semiconductor layers of a first semiconductor material and second semiconductor layers of a second semiconductor material alternatively stacked on the substrate; patterning the semiconductor stack and the substrate to form a trench and an active region being adjacent the trench; epitaxially growing a liner of the first semiconductor material on sidewalls of the trench and sidewalls of the active region; forming an isolation feature in the trench; performing a rapid thermal nitridation process, thereby converting the liner into a silicon nitride layer; and forming a cladding layer of the second semiconductor material over the silicon nitride layer.

Abstract: A memory management method, a memory storage device and a memory control circuit unit are disclosed. The method includes: detecting a status of a rewritable non-volatile memory module; and determining whether to perform a data refresh operation on the rewritable non-volatile memory module according to a first condition and a second condition. The first condition is related to a first physical unit in the rewritable non-volatile memory module. The second condition is related to a plurality of second physical units in the rewritable non-volatile memory module. The data refresh operation is configured to update data in the rewritable non-volatile memory module to reduce a bit error rate of the data.

Abstract: A semiconductor device comprises an insulating region surrounding an active area having a channel direction and a transverse direction that is transverse to the channel direction. A source region and a drain region are disposed in the active area, and are spaced apart along the channel direction. A channel is disposed in the active area and is interposed between the source region and the drain region. The channel comprises a two-dimensional electron gas (2DEG). A gate line is oriented along the transverse direction and is disposed on the channel and has a gate width in the channel direction. The gate line comprises gate material. A gate line terminus is disposed at each end of the gate line. Each gate line terminus comprises the gate material. Each gate line terminus has a width in the channel direction that is at least 1.2 time the gate width.

Abstract: Embodiments of the disclosed technologies are capable of a training pipeline to fine-tune a machine learning model given a limited set of domain-specific data. The embodiments describe using a first machine learning model to generate a pseudo label associated with a domain-specific training document. The pseudo label comprises a machine-generated text of a content type extracted from the domain-specific training document. The embodiments further describe fine-tuning a second machine learning model using the pseudo label, the domain-specific training document, a first low-rank weight matrix, and a second low-rank weight matrix. The fine-tuned second machine learning model generates text of the content type from a domain-specific document.

Abstract: A method for fabricating semiconductor device includes the steps of: forming a gate structure on a substrate; forming a first spacer adjacent to the gate structure, wherein the first spacer comprises silicon carbon nitride (SiCN); forming a second spacer adjacent to the first spacer, wherein the second spacer comprises silicon oxycarbonitride (SiOCN); and forming a source/drain region adjacent to two sides of the second spacer.

Abstract: A manufacturing method of an electronic device is disclosed by the present disclosure. The manufacturing method includes providing a plurality of semiconductor elements; performing a packaging process on the plurality of semiconductor elements to form a plurality of packaged semiconductor elements, wherein the packaging process includes disposing a plurality of filling material layers respectively on a sidewall of each of the plurality of semiconductor elements; providing a substrate, wherein the substrate includes a plurality of working areas, and each of the plurality of working areas includes at least one first recess; and disposing the plurality of packaged semiconductor elements in the at least one first recess of each of the plurality of working areas through fluid transfer.

Abstract: A semiconductor device according to the present disclosure includes a dielectric fin having a helmet layer, a gate structure disposed over a first portion of the helmet layer and extending along a direction, and a dielectric layer adjacent the gate structure and disposed over a second portion of the helmet layer. A width of the first portion along the direction is greater than a width of the second portion along the direction.

Abstract: A semiconductor device includes a first channel region, a second channel region, and a first insulating fin, the first insulating fin being interposed between the first channel region and the second channel region. The first insulating fin includes a lower portion and an upper portion. The lower portion includes a fill material. The upper portion includes a first dielectric layer on the lower portion, the first dielectric layer being a first dielectric material, a first capping layer on the first dielectric layer, the first capping layer being a second dielectric material, the second dielectric material being different than the first dielectric material, and a second dielectric layer on the first capping layer, the second dielectric layer being the first dielectric material.

Abstract: A bathtub overflow pipe includes an overflow pipe, an adapter and a over. The overflow pipe includes an extending section with an outlet. The adapter is connected to the end face of the extending section of the overflow pipe by bolts. The adapter includes a sleeve and a tab extending radially from one end of the sleeve. The sleeve includes a passage and is inserted into the outlet of the overflow pipe. The tab has a recess formed to its lower edge and communicating with the outlet for drainage. The cover includes a pillar and a rim which has a recessed area. The pillar extends axially from one of two sides of the cover and has a rib. The pillar extends through the passage of the adapter, the rib is slidably engaged with the recessed rail. The cover, the adapter and the overflow pipe can be precisely and easily assembled.

Abstract: An electronic device includes a first substrate, a second substrate, a circuit layer, a diode element, and a conductive wire. The first substrate has a first surface, a second surface opposite to the first surface, and a first side surface connected between the first surface and the second surface. The second substrate has a third surface, a fourth surface opposite to the third surface, and a second side surface connected between the third surface and the fourth surface, wherein the fourth surface is disposed away from the first surface. The circuit layer and the diode element are disposed on the first surface. The diode element and the conductive wire are electrically connected to the circuit layer. A first portion of the conductive wire is disposed on the first side surface, and a second portion of the conductive wire is disposed on the second side surface.

Abstract: A package including a first carrier, a seed layer, wires, a die and a molding material is provided. The first carrier is removed to expose the seed layer after disposing a second carrier on the molding material, then the seed layer is removed to expose the wires, and a gold layer is deposited on each of the wires by immersion gold plating, finally a semiconductor device is obtained. The gold layer is provided to protect the wires from oxidation and improve solder joint reliability.

Abstract: A display device is provided, and includes a substrate and a first light shielding layer disposed on the substrate and defining a plurality of first openings. The display device includes a first light filter layer disposed in one of the first openings and a plurality of light-emitting diodes disposed on the substrate. The display device includes a second light shielding layer disposed between the substrate and the first light shielding layer, and having a plurality of second openings. The at least part of the light-emitting diodes are disposed in the second openings respectively. The display device also includes a spacer element disposed between the first light shielding layer and the second light shielding layer, wherein from a cross-section view, a shape of the spacer element is arc-shaped, and a shape of the second light shielding layer is arc-shaped.