Abstract: A device includes a memory array, bit line pairs, word lines, a modulation circuit and a control signal generator. The memory array has bit cells arranged in rows and columns. Each bit line pair is connected to a respective column of bit cells. Each word line is connected to a respective row of bit cells. The modulation circuit is coupled with at least one bit line pair. The control signal generator is coupled with the modulation circuit. The control signal generator includes a tracking wiring with a tracking length positively correlated with a depth distance of the word lines. The control signal generator is configured to produce a control signal, switching to a first voltage level for a first time duration in reference with the tracking length, for controlling the modulation circuit. A method of controlling aforesaid device is also disclosed.

Abstract: A micro light emitting device includes an epitaxial structure, a conductive layer, and a first insulating layer. The epitaxial structure has a first surface and a second surface opposite to the first surface, and includes a first semiconductor layer, an active layer and a second semiconductor layer that are arranged in such order in a direction from the first surface to the second surface. The conductive layer is formed on a surface of the first semiconductor layer away from the active layer. The first insulating layer is formed on the surface of the first semiconductor layer away from the active layer, and exposes at least a part of the conductive layer.

Abstract: A method includes forming a first semiconductor fin and a second semiconductor fin in an n-type Fin Field-Effect (FinFET) region and a p-type FinFET region, respectively, forming a first dielectric fin and a second dielectric fin in the n-type FinFET region and the p-type FinFET region, respectively, forming a first epitaxy mask to cover the second semiconductor fin and the second dielectric fin, performing a first epitaxy process to form an n-type epitaxy region based on the first semiconductor fin, removing the first epitaxy mask, forming a second epitaxy mask to cover the n-type epitaxy region and the first dielectric fin, performing a second epitaxy process to form a p-type epitaxy region based on the second semiconductor fin, and removing the second epitaxy mask. After the second epitaxy mask is removed, a portion of the second epitaxy mask is left on the first dielectric fin.

Abstract: A power consumption monitoring device includes a sensor, a storage, and a processor. The sensor is configured to detect a power-consuming device quantity and a power consumption amount. The storage is configured to store the power-consuming device quantity and the power consumption amount. The processor is communicatively connected to the sensor and the storage. The processor is configured to calculate a power-consuming device idling indicator based on the power-consuming device quantity and the power consumption amount in a monitoring time interval, wherein the power-consuming device idling indicator is used for indicating a deviation status of the power-consuming device quantity and the power consumption amount. The processor is further configured to determine whether the power-consuming device idling indicator exceeds a warning threshold. In response to the power-consuming device idling indicator exceeding the warning threshold, the processor is further configured to generate a warning message.

Abstract: A device includes a memory array, bit line pairs, word lines, a modulation circuit and a control signal generator. The memory array has bit cells arranged in rows and columns. Each bit line pair is connected to a respective column of bit cells. Each word line is connected to a respective row of bit cells. The modulation circuit is coupled with at least one bit line pair. The control signal generator is coupled with the modulation circuit. The control signal generator includes a tracking wiring with a tracking length positively correlated with a depth distance of the word lines. The control signal generator is configured to produce a control signal, switching to a first voltage level for a first time duration in reference with the tracking length, for controlling the modulation circuit. A method of controlling aforesaid device is also disclosed.

Abstract: A display panel with reduced short-wavelength blue light is provided and includes a backlight module and an LCD panel. The backlight module includes a plurality of LEDs, each of which includes a blue LED die configured to emit blue light with a peak wavelength ranging from 455 to 475 nm. The present invention may efficiently reduce blue light with wavelengths less than 455 nm to protect eyes, and may not reduce display brightness and encounter color aberration. Moreover, the backlight module may further include an optical filter sheet or film configured to filter blue light with wavelengths less than 455 nm, and may further reduce blue light with wavelengths less than 455 nm to protect eyes more while modulating reduced display brightness and reduce color aberration.

Abstract: A method for making a light emitting diode lighting module includes steps of: (a) packaging a plurality of light emitting diode dies respectively on a plurality of die-mounting parts of a metal lead frame to form a plurality of light emitting diodes, respectively; and (b) cutting off supporting parts of the lead frame so as to form a connecting structure through which the light emitting diodes are connected to each other in one of serial, parallel, and serial-and-parallel connecting manners.

Abstract: A planar light source device includes: a substrate having a thickness larger than 0.9 mm and including a metal layer; and a plurality of light-emitting diode chips disposed on the substrate in a matrix array. Each light-emitting diode chip has a chip size ranging from 0.0784 mm2 to 0.25 mm2. Two adjacent ones of the light-emitting diode chips are spaced apart from each other by a distance of at least two times a length of the light-emitting diode chips.

Abstract: A lighting device includes: at least one lighting module including a lead frame and a plurality of light emitting diodes packaged on the lead frame; an upper plate disposed on the lead frame, and having at least one perforated region formed with a plurality of through-holes for extension of the light emitting diodes therethrough, and at least two conductor regions respectively provided on two sides of the perforated region, the conductor regions being connected electrically to the lead frame; a heat sink disposed below the lead frame; and a plurality of fasteners fastening the lighting module to the upper plate and the heat sink such that the heat sink is in tight contact with bottom ends of the light emitting diodes.

Abstract: A lighting device includes: at least one lighting module including a lead frame and a plurality of light emitting diodes packaged on the lead frame; an upper plate disposed on the lead frame, and having at least one perforated region formed with a plurality of through-holes for extension of the light emitting diodes therethrough, and at least two conductor regions respectively provided on two sides of the perforated region, the conductor regions being connected electrically to the lead frame; a heat sink disposed below the lead frame; and a plurality of fasteners fastening the lighting module to the upper plate and the heat sink such that the heat sink is in tight contact with bottom ends of the light emitting diodes.

Abstract: A planar light source device includes: a substrate having a thickness larger than 0.9 mm and including a metal layer; and a plurality of light-emitting diode chips disposed on the substrate in a matrix array. Each light-emitting diode chip has a chip size ranging from 0.0784 mm2 to 0.25 mm2. Two adjacent ones of the light-emitting diode chips are spaced apart from each other by a distance of at least two times a length of the light-emitting diode chips.

Abstract: A method for making a light emitting diode lighting module includes steps of: (a) packaging a plurality of light emitting diode dies respectively on a plurality of die-mounting parts of a metal lead frame to form a plurality of light emitting diodes, respectively; and (b) cutting off supporting parts of the lead frame so as to form a connecting structure through which the light emitting diodes are connected to each other in one of serial, parallel, and serial-and-parallel connecting manners.

Abstract: A lens for use with a light-emitting element includes a lens body that has a bottom surface for receiving light from the light-emitting element, a top surface opposite to the bottom surface along an optical axis, a peripheral surface extending and converging from the bottom surface to the top surface such that a projection of a perimeter of the top surface onto a plane of the bottom surface is surrounded by a perimeter of the bottom surface, and a textured structure formed on the top surface for scattering light that exits the top surface at angles relative to the optical axis.

Abstract: A solid state lighting device includes a heat-dissipating base, a diode chip, and a plurality of conductive terminals. The heat-dissipating base includes a base body formed integrally from a thermally conductive material. The base body has a top side, and is formed with a cavity that is indented from the top side. The base body further has a plurality of terminal channels, each of which extends from the cavity to an exterior of the base body. The diode chip is disposed in the cavity. Each of the conductive terminals extends through a respective one of the terminal channels, and has a first connecting part that is disposed in the cavity and that is coupled electrically to the diode chip, and a second connecting part that is disposed outwardly of the heat-dissipating base.

Abstract: A light emitting device includes: a heat dissipating unit including a metallic first heat sink having a chip-mounting area, a thermally conductive bonding layer, and a metallic second heat sink overlapping and attached to the first heat sink through the bonding layer such that the bonding layer is sandwiched between the first and second heat sinks, the heat dissipating unit being formed with a light exit window that is aligned with the chip-mounting area and that extends through the second heat sink and the bonding layer so as to expose the chip-mounting area; a light emitting chip attached to the chip-mounting area of the first heat sink for emitting light through the light exit window; and a transparent enclosing material filling the light exit window to enclose the light emitting chip.

Abstract: A lens includes a lens body having a bottom surface, a reflective surface, and a refractive surface. The bottom surface is to be disposed proximate to a light-emitting component. The reflective surface is disposed opposite to the bottom surface along a lens axis, and reflects a first portion of the light provided by the light-emitting component that is incident thereon toward the refractive surface. The refractive surface extends from an edge of the reflective surface to the bottom surface, and refracts a second portion of the light provided by the light-emitting component that is incident thereon as well as the first portion of the light reflected by the reflective surface theretoward in sideward directions relative to the light-emitting component. The lens body has cross-sections transverse to the lens axis, sizes of which increase gradually from a junction of the reflective surface and the refractive surface toward the bottom surface.

Abstract: A SMD-type LED with high heat dissipation efficiency and high power includes a base with a post arranged and integrated on the center thereof and a slot on top of the post. At least one contact hole is arranged on bottom of the base for connecting with an external heat sink so as to achieve better heat dissipation. The slot is used for accommodating a LED chip that is electrically connected with a circuitry extension device through two electrical contacts. The LED chip is electrically connected with the circuitry extension device directly while it also connects with the base for heat dissipation, thus the structure for electricity conduction is separated from the structure for heat dissipation.