Patents by Inventor Ming Liao

Ming Liao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250244810
    Abstract: A power supply system includes a power supply cage, a first switch arm, and a second switch arm. The power supply cage includes a top panel that has first and second edges. The first switch arm includes a first switch portion located near the first edge of the top panel, a first stopper portion located near the second edge, and a first arm portion that extends between the first switch portion and the first stopper portion. The second switch arm includes a second switch located near the second edge, a second stopper portion located near the first edge, a second arm portion that extends between the second switch portion and the second stopper portion, and a raised arm portion that overlaps the first arm portion of the first switch arm.
    Type: Application
    Filed: January 30, 2024
    Publication date: July 31, 2025
    Inventors: Te Ming Liao, Tingchun Kuo, Yen-Hsing Lin
  • Publication number: 20240429109
    Abstract: This invention provides an asymmetric pads structure using at a scribe line of a wafer, comprising a test element device electrically connected to a first pad and a second pad separately, wherein a first spacing between the second pad and the test element device is sufficient to accommodate the second pad of an another asymmetric pads structure. So, two neighboring asymmetric pads structures may cross to each other to form a cross configuration.
    Type: Application
    Filed: June 20, 2023
    Publication date: December 26, 2024
    Applicant: Nanya Technology Corporation
    Inventors: Chiang-Lin SHIH, Meng-Zhen LI, Wei-Ming LIAO, Hsueh Han LU, Wei Zhong LI
  • Publication number: 20240420992
    Abstract: A manufacturing method of a semiconductor structure includes: etching a substrate such that the substrate has a first top surface and a second top surface higher than the first top surface; implanting the first top surface of the substrate by boron to increase a p-type concentration of the first top surface of the substrate; forming a first dielectric layer on the substrate; and forming a second dielectric layer on the first dielectric layer.
    Type: Application
    Filed: August 26, 2024
    Publication date: December 19, 2024
    Inventors: Chuan-Lin HSIAO, Wei-Ming LIAO
  • Publication number: 20240407156
    Abstract: A semiconductor memory device includes a substrate with an active area, a bit line contact in contact with the active area, and a bit line having an end portion in contact with the bit line contact, wherein the end portion has a first trapezoidal profile. A semiconductor memory device manufacturing method is also disclosed to utilize a vertical etching process which has an etching recipe to have higher conductive material/barrier layer selectivity, thereby enlarging bit line contact to active area landing area and improving a contact resistance of the bit line contact.
    Type: Application
    Filed: June 2, 2023
    Publication date: December 5, 2024
    Inventors: Kai-Po SHANG, Wei-Ming LIAO
  • Publication number: 20240368679
    Abstract: A linear displacement isothermal amplification (LDIA) method and application thereof are by the present disclosure. The LDIA method of the present disclosure specifically starts the initial reaction of LDIA for four common primers of the template, including a pair of external primers (LOF and LOR) and internal primers (LIF and LIR), and an accelerating primer (LAR) may also be added in the reaction to form a short sequence product. The method provided by the disclosure greatly reduce the difficulty of primer design while maintaining the sensitivity and specificity similar to other isothermal amplification reactions such as loop-mediated isothermal amplification methods.
    Type: Application
    Filed: July 17, 2024
    Publication date: November 7, 2024
    Inventors: Ming LIAO, Jianmin ZHANG, Qijie LIN, Hongchao GOU, Kaiyuan JIA, Junhao PENG, Yucen LIANG
  • Patent number: 12107002
    Abstract: A manufacturing method of a semiconductor structure includes: etching a substrate such that the substrate has a first top surface and a second top surface higher than the first top surface; implanting the first top surface of the substrate by boron to increase a p-type concentration of the first top surface of the substrate; forming a first dielectric layer on the substrate; and forming a second dielectric layer on the first dielectric layer.
    Type: Grant
    Filed: October 11, 2023
    Date of Patent: October 1, 2024
    Assignee: NANYA TECHNOLOGY CORPORATION
    Inventors: Chuan-Lin Hsiao, Wei-Ming Liao
  • Patent number: 12076595
    Abstract: A fall arrester includes holder, rotating drum, and braking module. The rotating drum is pivotally installed on the holder, and includes main body and pawl which has first abutting portion and is pivotally provided on setting part. The braking module is fixed to holder, and includes cover, friction plate, and ratchet plate, being coaxially set in order. The ratchet plate has second abutting portion on its periphery. When rotating drum rotates at speed greater than or equal to predetermined rotating speed, and first abutting portion moves to second position to abut against second abutting portion, the cover and ratchet plate rotate relative to friction plate, driven by rotating drum. Additionally, the cover and ratchet plate generate frictional resistance with friction plate respectively to stop the rotating drum. Thus, the braking module of the fall arrester can be replaced thereby enabling provision of a new braking module as an initial condition.
    Type: Grant
    Filed: November 23, 2020
    Date of Patent: September 3, 2024
    Assignee: YOKE INDUSTRIAL CORP.
    Inventors: Wei-Chieh Hung, Wen-Ming Liao
  • Patent number: 12076594
    Abstract: A fall arrester includes a holder, rotating drum, braking device, and dust cover. The rotating drum is pivotally provided on and within the holder, and includes a main body and at least one pawl; the main body has an accommodating part to be wound by a cable and a setting part. The pawl is pivotally provided on the setting part, and the braking device is fixed to the holder and between the holder and the setting part. When the rotating drum rotates quickly by pull of the cable, the pawl would pivot and make a part thereof abut against a part of the braking device to stop the rotating drum. The dust cover is fixed to the setting part, and thereby prevents dust from affecting the pawl and the braking device located therein, and thus to enhance safe use thereof.
    Type: Grant
    Filed: November 23, 2020
    Date of Patent: September 3, 2024
    Assignee: YOKE INDUSTRIAL CORP.
    Inventors: Wei-Chieh Hung, Wen-Ming Liao
  • Publication number: 20240287466
    Abstract: Disclosed are construction and application of a recombinant H5N8 subtype avian influenza virus carrying an mApple fluorescence reporter gene, and relates to the field of molecular biology and genetic engineering. The present disclosure provides a nucleic acid molecule which can be used for constructing the recombinant H5N8 subtype avian influenza virus. Compared with a wild H5N8 virus, the recombinant H5N8 subtype avian influenza virus has a weakened virulence, and can replicate in an SPF chicken lung and shows pathogenicity.
    Type: Application
    Filed: July 18, 2023
    Publication date: August 29, 2024
    Applicant: South China Agricultural University
    Inventors: Manman DAI, Wei SONG, Xiyue CHEN, Ming LIAO
  • Publication number: 20240198434
    Abstract: A collet for a tool including an outer nut having a grip and defining a collet bore configured to receive a chuck. The collet bore includes a collet engagement surface engageable with the chuck to selectively secure a tool accessory. The collet also includes a spring having an extension portion engageable with an external part of an output shaft of the tool or an internal part of the outer nut to provide feedback to a user regarding securement of the collet.
    Type: Application
    Filed: December 14, 2023
    Publication date: June 20, 2024
    Inventors: Jonathan C. Loftis, Steven T. O'Shields, Long Long Hu, Fu Liu, Jia Ming Liao
  • Publication number: 20240193294
    Abstract: Technologies for protected data management are described. Embodiments include receiving a request to commit a code element to a codebase in a software application. The code element is scanned using a pre-commit scan. The scan includes a query that is customized to identify a protected data element and/or a protected data element access. The scan can identify at least one portion of the code element that accesses the protected data element. A database of registered protected data elements is searched for the protected data element and/or protected data element access. A notification can be generated and sent to a developer account that is associated with the request to commit the code element.
    Type: Application
    Filed: December 7, 2022
    Publication date: June 13, 2024
    Inventors: Saurav Kumar, Ming Liao
  • Patent number: 11998776
    Abstract: A rope based fall protection device including a rotation unit, a brake unit, and a rope. A first end of the rope is connected to the rotation unit. The rope includes a first rope loop and a second rope loop that are wound around the rotation unit. A first retaining portion of a retaining ring is sleeved on the first rope loop and a second retaining portion thereof is sleeved on the second rope loop, such that the rope forms a rope section which has a fixed length between the second retaining portion and the first end and is wound around the rotation unit. When a free end of the rope is pulled by an external force to release the rope wound around the rotation unit in a direction away from the rotation unit, the retaining ring is broken to release the rope section of the rope. The external force is greater than or equal to a pulling force generated by a user's free fall.
    Type: Grant
    Filed: September 11, 2019
    Date of Patent: June 4, 2024
    Assignee: YOKE INDUSTRIAL CORP.
    Inventors: Wen-Ming Liao, Wei-Chih Chen
  • Patent number: 11979977
    Abstract: A method for manufacturing a circuit board including: providing at least one wiring base board, the wiring base board comprising a first conductor layer, an insulation layer, and an alloy layer which are stacked in order, wherein a solder paste layer is formed on a side of the alloy layer, a part of the alloy layer is exposed out of the solder paste layer to form a thermal conductive surface; providing a core layer; and pressing two wiring base boards on two opposite sides of the core layer to form a sealed heat dissipating chamber between the thermal conductive surfaces of the two wiring base boards. The present disclosure further provides a circuit board having a heat dissipation structure.
    Type: Grant
    Filed: August 31, 2019
    Date of Patent: May 7, 2024
    Assignees: QING DING PRECISION ELECTRONICS (HUAIAN) CO., LTD, Avary Holding (Shenzhen) Co., Limited.
    Inventors: Hsiao-Ting Hsu, Tao-Ming Liao, Ming-Jaan Ho, Xian-Qin Hu, Fu-Yun Shen
  • Publication number: 20240138364
    Abstract: Disclosed is an air microorganism enrichment device in farms, and relates to the technical field of air microorganism collection.
    Type: Application
    Filed: January 11, 2023
    Publication date: May 2, 2024
    Inventors: Shaolun ZHAI, Chunling LI, Yan LI, Xia ZHOU, Ming LIAO, Mingfei SUN, Jianfeng ZHANG, Huahua KANG, Wenkang WEI, Ting YU
  • Patent number: 11935780
    Abstract: A manufacturing method of a semiconductor structure includes: etching a substrate such that the substrate has a first top surface and a second top surface higher than the first top surface; implanting the first top surface of the substrate by boron to increase a p-type concentration of the first top surface of the substrate; forming a first dielectric layer on the substrate; and forming a second dielectric layer on the first dielectric layer.
    Type: Grant
    Filed: November 11, 2021
    Date of Patent: March 19, 2024
    Assignee: NANYA TECHNOLOGY CORPORATION
    Inventors: Chuan-Lin Hsiao, Wei-Ming Liao
  • Publication number: 20240047265
    Abstract: A manufacturing method of a semiconductor structure includes: etching a substrate such that the substrate has a first top surface and a second top surface higher than the first top surface; implanting the first top surface of the substrate by boron to increase a p-type concentration of the first top surface of the substrate; forming a first dielectric layer on the substrate; and forming a second dielectric layer on the first dielectric layer.
    Type: Application
    Filed: October 11, 2023
    Publication date: February 8, 2024
    Inventors: Chuan-Lin HSIAO, Wei-Ming LIAO
  • Publication number: 20230346912
    Abstract: Disclosed are a restrictive epitope peptide of a major histocompatibility complex (MHC) B2 of an H9N2 subtype Avian influenza virus (AIV) and an application thereof, and relate to the technical field of genetic engineering. The restrictive epitope peptide has an amino acid sequence as shown in SEQ ID NO.1, SEQ ID NO.2, SEQ ID NO.3 or SEQ ID No.4.
    Type: Application
    Filed: April 24, 2023
    Publication date: November 2, 2023
    Inventors: Ming LIAO, Manman DAI, Yusheng JIA
  • Patent number: 11791382
    Abstract: A power semiconductor including a gate, a source, a plurality of first long-strip source metal layer, a drain and a plurality of second long-strip drain metal layer is provided. The source includes a first copper particle layer and a first metal layer that covers the bottom surface of the first copper particle layer. The source is bonded to the first long-strip source metal layer via a first metal pillar. The drain includes a second copper particle layer and a second metal layer that covers the bottom surface of the second copper particle layer. The drain is bonded to the second long-strip drain metal layer via a second metal pillar. The thickness of the first copper particle layer and the second copper particle layer are 5 ?m˜100 ?m. The first copper particle layer and the second copper particle layer are formed by plating and stacking a plurality of large-grain copper.
    Type: Grant
    Filed: September 20, 2022
    Date of Patent: October 17, 2023
    Inventors: Tso-Tung Ko, Brian Cinray Ko, Kuang-Ming Liao, Chen-Yu Liao
  • Publication number: 20230273615
    Abstract: A system and method of organizing, managing, and controlling one or more construction vehicles (automated and/or semiautomated) to perform one or more construction tasks within a construction site is provided. The system includes a software platform programmed to control the one or more unmanned construction vehicles via a transmitter and a navigation system. The locations, routes, and general functionalities of the construction vehicles are automatically controlled.
    Type: Application
    Filed: February 9, 2022
    Publication date: August 31, 2023
    Applicant: ECOTRON LLC
    Inventor: Ming Liao
  • Patent number: D1023729
    Type: Grant
    Filed: October 29, 2020
    Date of Patent: April 23, 2024
    Assignee: YOKE INDUSTRIAL CORP.
    Inventors: Wei-Chieh Hung, Wen-Ming Liao, Tzu-Lun Weng