Abstract: A semiconductor structure including a first dielectric layer and a conductive pattern is provided. The conductive pattern is disposed in the first dielectric layer, wherein the conductive pattern comprises an alloy layer and a first conductive layer, the alloy layer surrounds sidewalls and a bottom surface of the first conductive layer, a material of the alloy layer comprises an alloy of at least two metals, and at least one of the at least two metals relative to the rest of the at least two metals tends to be reacted with a dielectric material of the first dielectric layer.

Abstract: An apparatus for electroplating includes a cup configured to support a substrate, and a cone including at least three distance measuring devices arranged on a lower surface thereof and facing the substrate. Each distance measuring device is configured to transmit a laser pulse towards the substrate, the laser pulse impinging the substrate, receive a reflected laser pulse from the substrate, calculate a turnaround time of the laser pulse, and calculate a distance between the distance measuring device and the substrate using the turnaround time for determining an inclination of the substrate.

Abstract: The present disclosure relates to an integrated chip. The integrated chip includes a substrate. A first conductive feature is over the substrate. A second conductive feature is over the substrate and is adjacent to the first conductive feature. The first and second conductive features are separated by a cavity. A dielectric liner extends from the first conductive feature to the second conductive feature along a bottom of the cavity and further extends along opposing sidewalls of the first and second conductive features. A dielectric cap covers and seals the cavity. The dielectric cap has a top surface that is approximately planar with top surfaces of the first and second conductive features. The first conductive feature and the second conductive feature comprise graphene intercalated with one or more metals.

Abstract: A method for fabricating a semiconductor device includes the steps of forming a gate structure on a substrate, forming an interlayer dielectric (ILD) layer on the gate structure, forming a contact hole in the ILD layer adjacent to the gate structure, performing a plasma doping process to form a doped layer in the ILD layer and a source/drain region adjacent to the gate structure, forming a conductive layer in the contact hole, planarizing the conductive layer to form a contact plug, removing the doped layer to form an air gap adjacent to the contact plug, and then forming a stop layer on the ILD layer and the contact plug.

Abstract: A centrifugal precipitating method is provided. The method includes the following steps. A lighting structure is provided. The lighting structure includes a frame, a chip and a colloid. The frame has a recess. The chip is disposed on a bottom surface of the recess. The colloid includes a glue and several fluorescent particles. The glue is filled in the recess and covers the chip. The fluorescent particles are distributed in the glue. Then, the lighting structure is rotated to move the fluorescent particles toward the bottom surface of the recess.