Patents by Inventor Ming Michael Li

Ming Michael Li has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Formation of micro rough polysurface for low sheet resistant salicided sub-quarter micron polylines
    Patent number: 6992388
    Abstract: This invention relates to a method for manufacturing a semiconductor device having polysilicon lines with micro-roughness on the surface. The micro-rough surface of the polysilicon lines help produce smaller grain size silicide film during the formation phase to reduce the sheet resistance. The micro-rough surface of the polysilicon lines also increases the effective surface area of the silicide contacting polysilicon lines thereby reduces the overall resistance of the final gate structure after metallization.
    Type: Grant
    Filed: February 6, 2002
    Date of Patent: January 31, 2006
    Assignee: STMicroelectronics, Inc.
    Inventor: Ming Michael Li
  • Formation of micro rough polysurface for low sheet resistance salicided sub-quarter micron polylines
    Publication number: 20020070452
    Abstract: This invention relates to a method for manufacturing a semiconductor device having polysilicon lines with micro-roughness on the surface. The micro-rough surface of the polysilicon lines help produce smaller grain size silicide film during the formation phase to reduce the sheet resistance. The micro-rough surface of the polysilicon lines also increases the effective surface area of the silicide contacting polysilicon lines thereby reduces the overall resistance of the final gate structure after metallization.
    Type: Application
    Filed: February 6, 2002
    Publication date: June 13, 2002
    Applicant: STMicroelectronics Inc.
    Inventor: Ming Michael Li
  • FORMATION OF MICRO ROUGH POLY SURFACE FOR LOW SHEET RESISTANCE SALICIDED SUB-QUARTER MICRON POLY LINES
    Publication number: 20010041435
    Abstract: This invention relates to a method for manufacturing a semiconductor device having polysilicon lines with micro-roughness on the surface. The micro-rough surface of the polysilicon lines help produce smaller grain size silicide film during the formation phase to reduce the sheet resistance. The micro-rough surface of the polysilicon lines also increases the effective surface area of the silicide contacting polysilicon lines thereby reduces the overall resistance of the final gate structure after metallization.
    Type: Application
    Filed: July 31, 1998
    Publication date: November 15, 2001
    Inventor: MING MICHAEL LI