Abstract: The present invention is to provide a “fabricating method of nano-ring structure by nano-lithography” for fabricating out a new nano-ring structure in more miniature manner than that of the current fabricating facilities by directly using the current fabricating facilities without any alteration or redesign of the precision so that the number and density of the nano-ring structure in unit area or unit volume can be significantly increased in more evenness manner.

Abstract: The present invention provides a “microminiaturizing method of nano-structure” with fabricating process steps as follows: First deposit the material of molecule or atom state on the top-opening of the nano cylindrical pore, which having formed on the substrate, so that the diameter of said top-opening gradually reduce to become a reduced nano-aperture, whose opening diameter is smaller than that of said top-opening; Then, directly pass the deposit material of gas molecule or atom state through said reduced nano-aperture; thereby a nano-structure of nano quantum dot, nano rod or nano ring with smaller nano scale is directly formed on the surface of said substrate, which being laid beneath the bottom of said nano cylindrical pore.

Abstract: A fabricating method of Single Electron Transistor includes processing steps as follows: first, deposit the sealing material of gas molecule or atom state on the top-opening of the nano cylindrical pore, which having formed on the substrate, so that the diameter of said top-opening gradually reduce to become a reduced nano-aperture, whose opening diameter is smaller than that of said top-opening; then, keep the substrate in horizontal direction and tilt or rotate said substrate into tilt angle or rotation angle in coordination with tilt angle with the reduced nano-aperture as center respectively, and pass the deposit material of gas molecular or atom state through the reduced nano-aperture respectively. Thereby a Single Electron Transistor including island electrode, drain electrode, source electrode and gate electrode of nano-quantum dot with nano-scale is directly fabricated on the surface of said substrate.

Abstract: The present invention is to provide a “fabricating method for quantum dot active layer of LED by nano-lithography” for fabricating out a new active layer of LED of nano quantum dot structure in more miniature manner than that of the current fabricating facilities to have high quality LED with features in longer light wavelength, brighter luminance and lower forward bias voltage by directly using the current fabricating facilities without any alteration or redesign of the precision.

Abstract: The present invention is to provide a “fabricating method for quantum dot active layer of LED by nano-lithography” for fabricating out a new active layer of LED of nano quantum dot structure in more miniature manner than that of the current fabricating facilities to have high quality LED with features in longer light wavelength, brighter luminance and lower forward bias voltage by directly using the current fabricating facilities without any alteration or redesign of the precision.

Abstract: The present invention is to provide a “fabricating method of nano-ring structure by nano-lithography” for fabricating out a new nano-ring structure in more miniature manner than that of the current fabricating facilities by directly using the current fabricating facilities without any alteration or redesign of the precision so that the number and density of the nano-ring structure in unit area or unit volume can be significantly increased in more evenness manner.

Abstract: A fabricating method of Single Electron Transistor includes processing steps as follows: first, deposit the sealing material of gas molecule or atom state on the top-opening of the nano cylindrical pore, which having formed on the substrate, so that the diameter of said top-opening gradually reduce to become a reduced nano-aperture, whose opening diameter is smaller than that of said top-opening; then, keep the substrate in horizontal direction and tilt or rotate said substrate into tilt angle or rotation angle in coordination with tilt angle with the reduced nano-aperture as center respectively, and pass the deposit material of gas molecular or atom state through the reduced nano-aperture respectively. Thereby a Single Electron Transistor including island electrode, drain electrode, source electrode and gate electrode of nano-quantum dot with nano-scale is directly fabricated on the surface of said substrate.

Abstract: The present invention provides a “microminiaturizing method of nano-structure” with fabricating process steps as follows: First deposit the material of molecule or atom state on the top-opening of the nano cylindrical pore, which having formed on the substrate, so that the diameter of said top-opening gradually reduce to become a reduced nano-aperture, whose opening diameter is smaller than that of said top-opening; Then, directly pass the deposit material of gas molecule or atom state through said reduced nano-aperture; thereby a nano-structure of nano quantum dot, nano rod or nano ring with smaller nano scale is directly formed on the surface of said substrate, which being laid beneath the bottom of said nano cylindrical pore.