Abstract: The present disclosure provides an anti-Staphylococcus aureus specific antibody and the nucleic acid encoding sequence thereof, and uses of the same. The anti-Staphylococcus aureus specific antibody of the present disclosure achieves the effect of treating Staphylococcus aureus infection and enhancing immune cells against Staphylococcus aureus through various efficacy experiments.

Abstract: A method includes sequentially depositing a floating gate layer, a dielectric structure stack, and a control gate layer over a substrate. A first etching process is performed to pattern the control gate layer, the dielectric structure stack, and a top portion of the floating gate layer to form a control gate, a dielectric structure, and a top portion of a floating gate over a bottom portion of the floating gate layer. A sidewall of the top portion of the floating gate is concave. A first spacer structure is formed on the sidewall of the top portion of the floating gate, a sidewall of the dielectric structure, and a sidewall of the control gate. A second etching process is performed to pattern the bottom portion of the floating gate layer to form a bottom portion of the floating gate after forming the first spacer structure.

Abstract: A magnetic lock for charging an electric vehicle and an operating method of the magnetic lock are provided. The magnetic lock includes a voltage conversion circuit, a detection circuit, and a magnetic attraction circuit. The voltage conversion circuit receives a first voltage from a power supplying connector and converts the first voltage into a second voltage and a third voltage. The detection circuit is driven according to the second voltage, provides a first control signal according to a first status signal from the power supplying connector, and provides a second control signal according to the second status signal from the power supplying connector. The magnetic attraction circuit uses the third voltage to generate a magnetic attraction force according to the first control signal. The power supplying connector is fixed to a charging port of the electric vehicle by the magnetic attraction force.

Abstract: A bendable light device for a vehicle is provided and includes a bendable mounting plate and a light kit. The bendable mounting plate includes a main body portion. The light kit includes a first light assembly having a first light base, a first light cover and a first light emitting module between the first light base and the first light cover. A first assembling portion is formed on a side of the first light base and for assembling with the main body portion of the bendable mounting plate. The first light cover is mounted on the first light base. The bendable mounting plate is bent to be attached onto a surface of a vehicle body of the vehicle and fitted with a curve of the surface, such that the bendable light device can be easily attached onto the surface of the vehicle body of the vehicle without any gap therebetween.

Abstract: A flash memory device includes a floating gate electrode formed within a substrate semiconductor layer having a doping of a first conductivity type, a pair of active regions formed within the substrate semiconductor layer, having a doping of a second conductivity type, and laterally spaced apart by the floating gate electrode, an erase gate electrode formed within the substrate semiconductor layer and laterally offset from the floating gate electrode, and a control gate electrode that overlies the floating gate electrode. The floating gate electrode may be formed in a first opening in the substrate semiconductor layer, and the erase gate electrode may be formed in a second opening in the substrate semiconductor layer. Multiple instances of the flash memory device may be arranged as a two-dimensional array of flash memory cells.

Abstract: In some implementations, one or more semiconductor processing tools may form a first terminal of a semiconductor device by depositing a tunneling oxide layer on a first portion of a body of the semiconductor device, depositing a first volume of polysilicon-based material on the tunneling oxide layer, and depositing a first dielectric layer on an upper surface and a second dielectric layer on a side surface of the first volume of polysilicon-based material. The one or more semiconductor processing tools may form a second terminal of the semiconductor device by depositing a second volume of polysilicon-based material on a second portion of the body of the semiconductor device. A side surface of the second volume of polysilicon-based material is adjacent to the second dielectric layer.

Abstract: A drug carrier with a property of crossing the blood-brain barrier comprises an extracellular vesicle with a human leukocyte antigen-G antibody on its surface. This carrier can serve as a pharmaceutical composition for promoting apoptosis of brain tumor cells, inhibiting growth of brain tumor cells, or reducing expression of O6-methylguanine-DNA methyltransferase (MGMT) in brain tumor cells. These effects contribute to the treatment of glioblastoma multiforme (GBM).

Abstract: The present disclosure provides a fusion protein and the nucleic acid encoding sequence thereof, and uses of the same. The fusion protein of the present disclosure achieves the effect of treating cancer, immunoregulation and activating immune cells through various efficacy experiments.

Abstract: A flash memory device includes a floating gate electrode formed within a substrate semiconductor layer having a doping of a first conductivity type, a pair of active regions formed within the substrate semiconductor layer, having a doping of a second conductivity type, and laterally spaced apart by the floating gate electrode, an erase gate electrode formed within the substrate semiconductor layer and laterally offset from the floating gate electrode, and a control gate electrode that overlies the floating gate electrode. The floating gate electrode may be formed in a first opening in the substrate semiconductor layer, and the erase gate electrode may be formed in a second opening in the substrate semiconductor layer. Multiple instances of the flash memory device may be arranged as a two-dimensional array of flash memory cells.

Abstract: A display device having a wide color gamut includes a backplane, a light emitting group, a protective layer, and a color conversion structure. The light emitting group is disposed on the backplane, and includes a plurality of blue light emitting elements arranged at intervals. The protective layer encapsulates the blue light emitting elements in a lateral direction to expose their light emitting surfaces. The color conversion structure is disposed on the light emitting group to convert light from one portion of the blue light emitting elements into red light and green light and allow light from another one portion of the blue light emitting elements to pass through. The protective layer has a transmittance of 10% or less of light having a wavelength greater than 380 nm and less than 500 nm.

Abstract: Some implementations described herein provide a semiconductor structure. The semiconductor structure includes a first terminal coupled to a substrate of the semiconductor structure. The first terminal comprises a tunneling layer formed on the substrate, a first conductive structure formed on the tunneling layer, and a dielectric structure formed on a top surface and on a first curved side surface of the first conductive structure. The semiconductor structure includes a second terminal coupled to the substrate. The second terminal comprises a second conductive structure formed on an isolation structure. The second conductive structure has a second curved side surface, and the dielectric structure is disposed between the first curved side surface and the second curved side surface.

Abstract: The main objective of the present invention is to provide a lactic acid bacterial strain and a composition for improving gut microbiota composition. The composition comprises the lactic acid bacterial strain and/or extracellular vesicles secreted by the lactic acid bacterial strain. Another objective of the present invention is to provide a method for improving gut microbiota composition and products of the lactic acid bacterial strain. Additionally, the composition of the present invention has the capability to influence the growth of Firmicutes and Bacteroidetes, thereby leading to an improvement in gut microbiota composition.

Abstract: A BAG6 specific chimeric antigen receptor, a nucleic acid, a BAG6 specific chimeric antigen receptor expression plasmid, a BAG6 specific chimeric antigen receptor expressing cell, a pharmaceutical composition for treating cancer, and use of the BAG6 specific chimeric antigen receptor expressing cell are provided. The BAG6 specific chimeric antigen receptor specifically binds to BCL2 associated athanogene 6 (BAG6). The nucleic acid encodes the BAG6 specific chimeric antigen receptor. The BAG6 specific chimeric antigen receptor expression plasmid expresses the BAG6 specific chimeric antigen receptor. The BAG6 specific chimeric antigen receptor expressing cell is obtained by transducing the BAG6 specific chimeric antigen receptor into an immune cell. The pharmaceutical composition for treating cancer includes the BAG6 specific chimeric antigen receptor expressing cell and a pharmaceutically acceptable carrier.

Abstract: An example manufacturing method includes performing first ion implantation into a first area of a substrate to form a buried layer. Second ion implantation into a second area of the substrate is performed to form a pre-dopant, where the second area is disposed around a periphery of the first area, and a thermal diffusion capability of ions in the pre-dopant is higher than a thermal diffusion capability of ions at the buried layer. An epitaxial layer is formed on a side, of the substrate, on which the buried layer and the pre-dopant are disposed. Third ion implantation into the epitaxial layer is performed, in correspondence to the second area, to form a deep well. Thermal annealing is performed to thermally diffuse ions at the buried layer, in the pre-dopant, and in the deep well.

Abstract: Some implementations described herein provide a semiconductor structure. The semiconductor structure includes a first terminal coupled to a substrate of the semiconductor structure, with the first terminal including a first portion of a tunneling layer formed on the substrate, and a first gate formed on the first portion of the tunneling layer. The semiconductor structure includes a second terminal coupled to the substrate and adjacent to the first terminal, with the second terminal including a second portion of the tunneling layer formed on the substrate, a second gate formed on the second portion of the tunneling layer, and a dielectric structure formed on a top surface and side surfaces of the second gate. The semiconductor structure includes a third terminal coupled to an insulating structure and adjacent to the second terminal, with the third terminal including, a third gate formed on the insulating structure.

Abstract: A system for monitoring usage of an electrical appliance includes an electrical socket device and a server. The electrical socket device includes an audio receiving module for generating an audio result based on sound at a site where the electrical appliance is disposed, and a processing module configured to generate audio feature data based on the audio result and to generate event data that is related to the usage of the electrical appliance at least based on the audio feature data. The server stores a behavioral feature recognition model that is configured to recognize multiple behavioral features related to behaviors of the user using the electrical appliance. The server uses the behavioral feature recognition model to determine whether the event data matches one of the behavioral feature, and sends a warning message to a user end device when the event data does not match any of the behavioral features.

Abstract: Some implementations described herein provide a semiconductor structure. The semiconductor structure includes a first terminal coupled to a substrate of the semiconductor structure. The first terminal comprises a tunneling layer formed on the substrate, a first conductive structure formed on the tunneling layer, and a dielectric structure formed on a top surface and on a first curved side surface of the first conductive structure. The semiconductor structure includes a second terminal coupled to the substrate. The second terminal comprises a second conductive structure formed on an isolation structure. The second conductive structure has a second curved side surface, and the dielectric structure is disposed between the first curved side surface and the second curved side surface.

Abstract: A site monitoring method uses an electrical socket device to collect current data of an electrical appliance that is electrically connected to the electrical socket device. Based on the current data, a management server can derive a user behavior in connection with using the electrical appliance, and send out a warning message when the user behavior thus derived is abnormal.

Abstract: A system, method, and computer program product include: collecting runtime history capture data by a data agent operable on a computing device; performing a pre-analysis of entries in the history capture data, the history capture data including a plurality of database transactions corresponding to user tables, and providing formatted history capture data; clustering the formatted history capture data into clusters by data characteristics of interval groups; performing a post-analysis on the clusters and providing a unit data profile for capture data of the user tables; and dynamically updating capture policies corresponding to capture processes for the user tables, the updating based at least on the unit data profile provided by the post-analysis. In some embodiments the clustering is density based. Optionally, an alert is sent when capture process capacity is exceeded.

Abstract: Some implementations described herein provide a semiconductor structure. The semiconductor structure includes a first terminal coupled to a substrate of the semiconductor structure, with the first terminal including a first portion of a tunneling layer formed on the substrate, and a first gate formed on the first portion of the tunneling layer. The semiconductor structure includes a second terminal coupled to the substrate and adjacent to the first terminal, with the second terminal including a second portion of the tunneling layer formed on the substrate, a second gate formed on the second portion of the tunneling layer, and a dielectric structure formed on a top surface and side surfaces of the second gate. The semiconductor structure includes a third terminal coupled to an insulating structure and adjacent to the second terminal, with the third terminal including, a third gate formed on the insulating structure.