Abstract: An embedded flash memory structure, including a semiconductor substrate, an erase gate on the semiconductor substrate, two floating gates respectively at two sides of the erase gate on the semiconductor substrate, two word lines respectively at outer sides of the two floating gates, and two metal control gates respectively on the two floating gates, wherein a sacrificial layer is at at least one side of the metal control gate, and the sacrificial layer is between the metal control gate and the erase gate or between the metal control gate and the word line.

Abstract: A semiconductor package includes a conductive pillar and a solder. The conductive pillar has a first sidewall and a second sidewall opposite to the first sidewall, wherein a height of the first sidewall is greater than a height of the second sidewall. The solder is disposed on and in direct contact with the conductive pillar, wherein the solder is hanging over the first sidewall and the second sidewall of conductive pillar.

Abstract: Systems, apparatus, articles of manufacture, and methods are disclosed for electronic devices with tactile keyboards. An example electronic device includes a tactile keyboard having a plurality of rows of keys; a printed circuit board; a first row of switches on the printed circuit board, a first row of the plurality of rows of keys to interact with the first row of switches; and a second row of switches on a component adjacent to the printed circuit board, a second row of the plurality of rows of keys to interact with the second row of switches.

Abstract: Methods for forming under-bump metallurgy (UBM) structures having different surface profiles and semiconductor devices formed by the same are disclosed. In an embodiment, a semiconductor device includes a first redistribution line and a second redistribution line over a semiconductor substrate; a first passivation layer over the first redistribution line and the second redistribution line; a first under-bump metallurgy (UBM) structure over and electrically coupled to the first redistribution line, the first UBM structure extending through the first passivation layer, a top surface of the first UBM structure being concave; and a second UBM structure over and electrically coupled to the second redistribution line, the second UBM structure extending through the first passivation layer, a top surface of the second UBM structure being flat or convex.

Abstract: A memory structure including a substrate, charge storage layers, and a gate is provided. The charge storage layers are located on the substrate. The gate is located on the substrate on one side of the charge storage layers. The gate extends along a first direction. The gate has a protruding portion protruding along a second direction. The second direction intersects the first direction. The protruding portion is located between two adjacent charge storage layers arranged along the first direction.

Abstract: A fan rotor mechanism includes a fan impeller, a case and an adhesive body. The fan impeller has a hub and multiple fan blades. The hub has a first top section and a first peripheral section together defining a receiving space for receiving the case. The case has a receptacle for receiving therein at least one magnetic component. The case and the magnetic component define therebetween a filling gap. The case is formed with at least one perforation in communication with the filling gap. The adhesive body is filled up in the filling gap. By means of the structural design of the fan rotor mechanism, the fan rotor mechanism is applicable to various magnetic components with different sizes. Therefore, is unnecessary to manufacture different sizes of molds for different sizes of cases so that the fan rotor mechanism has high universality and is manufactured at lower cost.