Abstract: A thin film transistor includes a substrate, a semiconductor layer, a gate insulating layer, a gate, a source and a drain. The semiconductor layer is located above the substrate. The gate insulating layer is located above the semiconductor layer. The gate is located above the gate insulating layer and overlapping with the semiconductor layer. The gate includes a first portion, a second portion and a third portion. The first portion is extending along the surface of the gate insulating layer and directly in contact with the gate insulating layer. The second portion is separated from the gate insulating layer. Taking the surface of the gate insulating layer as a reference, the top surface of the second portion is higher than the top surface of the first portion. The third portion connects the first portion to the second portion. The source and the drain are electrically connected to the semiconductor layer.

Abstract: The present disclosure provides a flexible graphite sheet and a method for fabricating the same and a composite structure for the same. The method for fabricating a flexible graphite sheet comprises steps of coating an augmenting solution on a first film to form a composite structure, and heating the composite structure such that the first film and the augmenting solution form a flexible graphite sheet, wherein the thermal conducting cross-section of the flexible graphite sheet is larger than the thermal conducting cross-section of the first film, and the thermal conductivity of the flexible graphite sheet ranges from 1200 to 6000 W/m° C.

Abstract: The present disclosure provides a flexible graphite sheet and a method for fabricating the same and a composite structure for the same. The method for fabricating a flexible graphite sheet comprises steps of coating an augmenting solution on a first film to form a composite structure, and heating the composite structure such that the first film and the augmenting solution form a flexible graphite sheet, wherein the thermal conducting cross-section of the flexible graphite sheet is larger than the thermal conducting cross-section of the first film, and the thermal conductivity of the flexible graphite sheet ranges from 1200 to 6000 W/m° C.

Abstract: An illuminating device includes a substrate, a circuit layer, a conductive structure, and at least one LED die. The circuit layer is disposed on a top surface of the substrate. The conductive structure is disposed on the top surface of the substrate and includes a graphite layer. The LED die is attached to the conductive structure and is electrically connected to the circuit layer through the conductive structure.