Patents by Inventor Ming Shing LIN

Ming Shing LIN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250128214
    Abstract: A gas mixing system for semiconductor fabrication includes a mixing block. The mixing block defines a gas mixing chamber, a first gas channel fluidly coupled to the gas mixing chamber at a first exit location, and a second gas channel fluidly coupled to the gas mixing chamber at a second exit location, wherein the first exit location is diametrically opposite the second exit location relative to the gas mixing chamber and the second gas channel has a bend of 90 degrees or less between an entrance of the second gas channel and the second exit location.
    Type: Application
    Filed: December 30, 2024
    Publication date: April 24, 2025
    Inventors: Ming Shing LIN, Chin Shen HSIEH
  • Patent number: 12179161
    Abstract: A gas mixing system for semiconductor fabrication includes a mixing block. The mixing block defines a gas mixing chamber, a first gas channel fluidly coupled to the gas mixing chamber at a first exit location, and a second gas channel fluidly coupled to the gas mixing chamber at a second exit location, wherein the first exit location is diametrically opposite the second exit location relative to the gas mixing chamber and the second gas channel has a bend of 90 degrees or less between an entrance of the second gas channel and the second exit location.
    Type: Grant
    Filed: July 28, 2023
    Date of Patent: December 31, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Ming Shing Lin, Chin Shen Hsieh
  • Publication number: 20230372884
    Abstract: A gas mixing system for semiconductor fabrication includes a mixing block. The mixing block defines a gas mixing chamber, a first gas channel fluidly coupled to the gas mixing chamber at a first exit location, and a second gas channel fluidly coupled to the gas mixing chamber at a second exit location, wherein the first exit location is diametrically opposite the second exit location relative to the gas mixing chamber and the second gas channel has a bend of 90 degrees or less between an entrance of the second gas channel and the second exit location.
    Type: Application
    Filed: July 28, 2023
    Publication date: November 23, 2023
    Inventors: Ming Shing LIN, Chin Shen HSIEH
  • Patent number: 11772058
    Abstract: A gas mixing system for semiconductor fabrication includes a mixing block. The mixing block defines a gas mixing chamber, a first gas channel fluidly coupled to the gas mixing chamber at a first exit location, and a second gas channel fluidly coupled to the gas mixing chamber at a second exit location, wherein the first exit location is diametrically opposite the second exit location relative to the gas mixing chamber and the second gas channel has a bend of 90 degrees or less between an entrance of the second gas channel and the second exit location.
    Type: Grant
    Filed: October 18, 2019
    Date of Patent: October 3, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
    Inventors: Ming Shing Lin, Chin Shen Hsieh
  • Publication number: 20210249298
    Abstract: A height adjustable semiconductor wafer support is provided. The height adjustable semiconductor wafer support includes a chuck for supporting a semiconductor wafer, an adjustment mechanism having a top surface for supporting the chuck, and a stage coupled to the adjustment mechanism such that movement of the top surface of the adjustment mechanism relative to the stage changes a distance between the top surface of the adjustment mechanism and a top surface of the stage.
    Type: Application
    Filed: February 11, 2020
    Publication date: August 12, 2021
    Inventors: Ming Shing LIN, Yichi YEN, Sky CHEN, Gwo-Lun LOU
  • Publication number: 20210113972
    Abstract: A gas mixing system for semiconductor fabrication includes a mixing block. The mixing block defines a gas mixing chamber, a first gas channel fluidly coupled to the gas mixing chamber at a first exit location, and a second gas channel fluidly coupled to the gas mixing chamber at a second exit location, wherein the first exit location is diametrically opposite the second exit location relative to the gas mixing chamber and the second gas channel has a bend of 90 degrees or less between an entrance of the second gas channel and the second exit location.
    Type: Application
    Filed: October 18, 2019
    Publication date: April 22, 2021
    Inventors: Ming Shing LIN, Chin Shen HSIEH