Abstract: An interconnect structure includes a damascene structure, an inter-metal dielectric (IMD), a dielectric block and a metal via. The inter-metal dielectric layer is over the damascene structure. The dielectric block is embedded in the IMD layer and has a different etch selectivity than the IMD layer. The metal via is in the IMD layer and through the dielectric block to electrically connect the damascene structure.

Abstract: Methods of fabricating an integrated circuit device are provided. The method includes depositing a dielectric layer and a first hard mask layer in sequence over a substrate. The method also includes forming a patterned second hard mask on the first hard mask layer, and forming a third hard mask portion in an opening of the patterned second hard mask. The method further includes removing the patterned second hard mask to leave the third hard mask portion on the first hard mask layer, and etching the first hard mask layer to form a patterned first hard mask. In addition, the method includes etching the dielectric layer by using the patterned first hard mask as an etching mask to form trenches in the dielectric layer, and filling the trenches with a conductive material to form conductive lines.

Abstract: An interconnect structure includes a damascene structure, an inter-metal dielectric (IMD), a dielectric block and a metal via. The inter-metal dielectric layer is over the damascene structure. The dielectric block is embedded in the IMD layer and has a different etch selectivity than the IMD layer. The metal via is in the IMD layer and through the dielectric block to electrically connect the damascene structure.

Abstract: A seal ring structure is disclosed for protecting a core circuit region of an integrated circuit chip. The seal ring structure includes a metallization layer, having a bridge sublevel and a plug sublevel. An upper-level bridge is formed on the bridge sublevel at a predetermined location between a peripheral edge of the integrated circuit chip and the core circuit region. A lower-level bridge is formed on the plug sublevel in substantial alignment with the upper-level bridge, wherein the lower-level bridge has a width substantially the same as that of the upper-level bridge.

Abstract: A seal ring structure is disclosed for protecting a core circuit region of an integrated circuit chip. The seal ring structure includes a metallization layer, having a bridge sublevel and a plug sublevel. An upper-level bridge is formed on the bridge sublevel at a predetermined location between a peripheral edge of the integrated circuit chip and the core circuit region. A lower-level bridge is formed on the plug sublevel in substantial alignment with the upper-level bridge, wherein the lower-level bridge has a width substantially the same as that of the upper-level bridge.

Abstract: A test pad comprises a plurality of metal lines formed in a plurality of metal layers disposed over a wafer or substrate. The plurality of metal lines form a slotted pad member that includes at least one elongated main pad section, at least one side pad section, and a plurality of metal filled vias connecting the lines in the metal layers. The number of vias provided in the central area of the pad may be reduced in number or not provided at all.

Abstract: A border and inner via design for a pad which aids reducing stress and eliminative crack penetration into a die is presented. It is emphasized that this abstract is provided to comply with the rules requiring an abstract which will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

Abstract: An apparatus and method for protecting die corners in a semiconductor integrated circuit. At least one irregular seal ring having two sides can be configured, wherein the irregular seal ring is located at a corner of a die utilized in fabricating a semiconductor integrated circuit. A dummy configuration for stress relief can then be arranged, wherein the dummy configuration is located at the two sides of the at least one irregular seal ring, thereby protecting the corner of the die against thermal stress and the semiconductor integrated circuit against moisture and metallic impurities. The irregular seal ring can be configured to generally comprise a non-rectangular seal ring. The irregular seal preferably comprises an octangular seal ring.

Abstract: A testing module for testing the strength of the welding area on a PCB is disclosed. The testing module has a plurality of first plates each provided with a plurality of pressing plates adjustably mounted thereon and a plurality of second plates each provided with a plurality of supporting plates securely mounted thereon. Each of the pressing plates are located at the center of two adjacent supporting plates, such that a plurality of PCBs are able to be tested for the strength of the welding area at a time.